A5028737333- Diamond and Carbon-based Materials Research
- ZnO doping and properties
- Ga2O3 and related materials
- Thermal properties of materials
- Electronic and Structural Properties of Oxides
- Copper-based nanomaterials and applications
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Metal and Thin Film Mechanics
- Gas Sensing Nanomaterials and Sensors
- Magnetic and transport properties of perovskites and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Phase-change materials and chalcogenides
- Quantum Dots Synthesis And Properties
- Advanced Photocatalysis Techniques
- High-pressure geophysics and materials
- Solid-state spectroscopy and crystallography
- Advanced Condensed Matter Physics
- Mechanical and Optical Resonators
- Force Microscopy Techniques and Applications
- Boron and Carbon Nanomaterials Research
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
- Crystal Structures and Properties
- Nanoplatforms for cancer theranostics
Jinling Institute of Technology
2020-2025
Nanyang Technological University
2024-2025
Nanjing University
2009-2024
Anhui University of Science and Technology
2011-2020
National Institute for Materials Science
2017-2018
Collaborative Innovation Center of Advanced Microstructures
2010
The electron mobility of In–Ga 2 O 3 are the highest among Ga , Al–Ga and .
Improving the thermal conductivity of β-Ga2O3 is critical for optimizing its performance in high-power electronic devices, as effective management significantly influences their output power and reliability. In this work, conductivities (AlxGa1−x)2O3 alloys along (2¯ 0 1) direction were first computed using a non-equilibrium molecular dynamics method based on deep learning potential. Our results indicate that calculated 16.6 W m−1K−1 direction, which excellent agreement with experimental...
Improving the thermal conductance at GaN/diamond interface is crucial for boosting GaN-based device performance and reliability. In this study, first-principles calculations molecular dynamics simulations were employed to explore interfacial of interfaces with AlxGa1–xN transition layers. The alloy exhibits a lower conductivity than GaN, primarily due enhanced anharmonic phonon scattering. However, interface, we discovered that introducing an high Al concentration (x > 0.5) as bridge between...
In this paper, the authors demonstrate an effective pathway to enhance p-type conduction in N-doped ZnO through codoping method with tellurium during metal-organic chemical vapor deposition process. Tellurium may act as a surfactant reducing formation energy of NO acceptors and thus incorporation efficiency nitrogen. addition, shows significant effect suppressing donorlike carbon related complexes. The increased hole carrier concentration exhibits strong evidence enhancement dopant...
To understand and control thermal conductance of interface between metal semiconductor has now become a crucial task for the design management nano-electronic micro-electronic devices. The interfacial alignments electronic characteristics interfaces are studied using first-principles calculation based on hybrid density functional theory. were calculated analyzed diffuse mismatch model, acoustic model nonequilibrium molecular dynamics methods. Especially, according to dynamics, values...
Abstract To achieve ultra‐high gain deep‐ultraviolet (DUV) detectors based on ultra‐wide bandgap semiconductors comparable with those of bulky photomultiplier tubes (PMTs), avalanche photodiodes have usually been adopted. However, the high‐operation voltage (∼100 V) is not compatible monolithic integration. Herein, it demonstrated that DUV photodetectors (PDs) low operation voltages (<5 can be achieved by using synergistic effect surface states and deep defects in a type‐Ib single‐crystal...
Tailoring the electronic states of dielectric oxide/diamond interface is critical to development next generation semiconductor devices like high-power high-frequency field-effect transistors. In this work, we investigate TiO2/diamond 2 × 1–(100) by using first principles total energy calculations. Based on calculation chemical potentials for interface, it observed that hetero-interfaces with C-OTi configuration or two O vacancies are most energetically favorable structures under O-rich...
The influences of Mn doping on the electrical and optical properties Zn1−xMnxO:N films have been investigated. incorporation occupying Zn site has led lattice constants bandgap increased with structural quality deteriorated. found to change significantly content in films, due changes amount NO acceptors CN compensation centers formed by as revealed x-ray photoelectron spectrometry measurements. chemical states identified Mn2+ Mn4+, corresponding MnO2 second phase, respectively. conductive...
The structural, energetic, and electronic properties of lattice highly mismatched ZnY1−xOx (Y = S, Se, Te) ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate formation an isolated intermediate band structure through diluted O-substitute in zinc-blende ZnY at octahedral sites a semiconductor by calculations states (DOS), leading to significant absorption below gap parent enhancement optical whole energy range...
Two-dimensional (2D) electron gas with high-mobility is found in wurtzite ZnO/Zn(Mg)O heterostructure, which probably arises from the polarization discontinuity at interface, and 2D heterostructure usually also regarded as resulting polarization-induced charge. In order to explore both formation mechanism origin of ZnMgO/ZnO it necessary study properties Zn1-xMgxO alloy energy band alignment ZnO/Zn1-xMgxO super-lattice. this paper, we different Mg compositions by using first-principles...
Diamond is regarded as one of the most promising semiconductor materials used for high power devices because its superior physical and electrical properties, such wide bandgap, breakdown electric field, mobility, thermal conductivity. Highpower diamond are now receiving much attention. In particular, Schottky diode based on a metal/diamond junction has applications, voltage been achieved, though unfortunately forward resistance high. this paper, first principles calculations performed to...