A5034131057- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- ZnO doping and properties
- Thermal properties of materials
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Phase-change materials and chalcogenides
- Thin-Film Transistor Technologies
- Electronic and Structural Properties of Oxides
- Solid-state spectroscopy and crystallography
- Ga2O3 and related materials
- Luminescence Properties of Advanced Materials
- Corrosion Behavior and Inhibition
- Gas Sensing Nanomaterials and Sensors
- Metallurgy and Material Forming
- Advancements in Semiconductor Devices and Circuit Design
- Microstructure and Mechanical Properties of Steels
- Nanowire Synthesis and Applications
- Crystal Structures and Properties
- Advanced Semiconductor Detectors and Materials
- Viral Infections and Immunology Research
- Adhesion, Friction, and Surface Interactions
Jinling Institute of Technology
2018-2024
Nanjing University
2023-2024
Collaborative Innovation Center of Advanced Microstructures
2023
Changchun University of Science and Technology
2023
State Key Laboratory of New Ceramics and Fine Processing
2017-2018
Tsinghua University
2016-2018
Ministry of Education of the People's Republic of China
2018
Ansteel (China)
2014
Technology Centre Prague
2014
Beihang University
2013
The buffer is an essential component that connects the window and absorber layers in thin film solar cells, which has significant impacts on performance of cell device. CdS widely used material, but it drawbacks toxicity narrow band gap 2.4 eV. This work explores fabrication a novel Cd-free MgZnS layer through co-sputtering ZnS Mg targets. grain size, morphology, phase composition, transmittance films are manipulated by adjusting substrate temperature, sputtering power target current target....
We investigated the high absolute photoluminescence quantum yields (PL QYs) from tunable luminescent amorphous silicon oxynitride (a-SiNxOy) films. The PL QY of 8.38 percent has been achieved at peak energy 2.55 eV in a-SiNxOy systems, which is higher than those reported nanocrystal-Si embedded nitride existence N-Si-O bonding states was confirmed by performing FTIR, XPS and EPR measurements. proportional to concentration Nx defects, indicating dominant contribution radiative recombination...
To understand and control thermal conductance of interface between metal semiconductor has now become a crucial task for the design management nano-electronic micro-electronic devices. The interfacial alignments electronic characteristics interfaces are studied using first-principles calculation based on hybrid density functional theory. were calculated analyzed diffuse mismatch model, acoustic model nonequilibrium molecular dynamics methods. Especially, according to dynamics, values...
In recent years, researchers have placed great importance on the use of silicon (Si)-related materials as efficient light sources for purpose realizing Si-based monolithic optoelectronic integration. Previous works were mostly focused Si nanostructured materials, and, so far, exciting results from compounds are still lacking. this paper, we systematically demonstrated high photoluminescence external quantum efficiency (PL EQE) and internal IQE) amorphous oxynitride (a-SiNxOy) systems. Within...