A5083999015- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Optical Coatings and Gratings
- Laser Material Processing Techniques
- Surface Roughness and Optical Measurements
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Surface Polishing Techniques
- Electronic and Structural Properties of Oxides
- Diamond and Carbon-based Materials Research
- Soil Carbon and Nitrogen Dynamics
- Ga2O3 and related materials
- Legume Nitrogen Fixing Symbiosis
- Optical Systems and Laser Technology
- Silicone and Siloxane Chemistry
- Crystal Structures and Properties
- Surface Modification and Superhydrophobicity
- Perovskite Materials and Applications
- Plant nutrient uptake and metabolism
- Copper Interconnects and Reliability
- Laser-induced spectroscopy and plasma
- Phase-change materials and chalcogenides
Zhengzhou University
2020-2025
China Academy of Engineering Physics
2017-2024
Chengdu Fine Optical Engineering Research Center
2011-2023
Institute of Optics and Electronics, Chinese Academy of Sciences
2011-2023
Chinese Academy of Engineering
2023
Henan Agricultural University
2021-2022
Henan Bioengineering Technology Research Center
2021-2022
Tsinghua University
2016-2020
Materials Processing (United States)
2019
State Key Laboratory of New Ceramics and Fine Processing
2017-2019
CZTSe solar cells with 11.95% peak efficiency have been achieved by sputtering a quaternary compound target using the selenization process.
The buffer is an essential component that connects the window and absorber layers in thin film solar cells, which has significant impacts on performance of cell device. CdS widely used material, but it drawbacks toxicity narrow band gap 2.4 eV. This work explores fabrication a novel Cd-free MgZnS layer through co-sputtering ZnS Mg targets. grain size, morphology, phase composition, transmittance films are manipulated by adjusting substrate temperature, sputtering power target current target....
The electron mobility of In–Ga 2 O 3 are the highest among Ga , Al–Ga and .
Sb 2 Se 3 was incorporated into precursor films. During annealing, decomposes, releasing and Se, which provides the necessary energy for grain growth through mass transport at boundaries, thereby promoting performance of solar cells.
A novel silica coating with durable AR performance under volatile organics and moisture condition was obtained by using DFDO as porosity modulator, PHFBA filler to protect it from contamination.