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Hybrid Rapeseed Research Center of Shaanxi Province
2024
Shanghai University
2019-2023
National Yang Ming Chiao Tung University
1993
We have successfully grown In0.49Ga0.51P/GaAs heterostructures and made InGaP-based high electron mobility transistors (HEMTs) by low-pressure metalorganic chemical vapor deposition. found the epitaxial layer of InGaP with a Hall 4073 cm2/V s (300 K) photoluminescence full width at half-maximum 1 meV (4.2 for GaAs, 12 In0.49Ga0.51P. Zinc-induced disordering phenomenon was examined transmission microscope. By Shubnikov-de Haas measurement, we demonstrated existence two-dimensional gas in...