A5087630808- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- 2D Materials and Applications
- Photocathodes and Microchannel Plates
- Perovskite Materials and Applications
- Semiconductor Quantum Structures and Devices
- MXene and MAX Phase Materials
- Nanowire Synthesis and Applications
- Advanced biosensing and bioanalysis techniques
- Spectroscopy and Laser Applications
- Plasma Diagnostics and Applications
- Plasmonic and Surface Plasmon Research
- Organic Light-Emitting Diodes Research
- Aerogels and thermal insulation
- Gas Sensing Nanomaterials and Sensors
- Electronic and Structural Properties of Oxides
- Luminescence Properties of Advanced Materials
Wuhan National Laboratory for Optoelectronics
2019-2024
Huazhong University of Science and Technology
2019-2024
Nanyang Technological University
2023
Academia Sinica
1987
Abstract In the last decade, two‐dimensional layered materials (2DLMs) have been drawing extensive attentions due to their unique properties, such as absence of surface dangling bonds, thickness‐dependent bandgap, high absorption coefficient, large specific area, and so on. But high‐quality growth transfer wafer‐scale 2DLMs films is still a great challenge for commercialization pure 2DLMs‐based photodetectors. Conversely, material device fabrication technologies three‐dimensional (3D)...
We demonstrated an AlGaN-based multiple-quantum-well (MQW) deep ultraviolet (DUV) laser at 278 nm using a nanoporous (NP) n-AlGaN as the bottom cladding layer grown on sapphire substrate. The has very-low-threshold optically pumped power density of 79 kW/cm 2 room temperature and transverse electric (TE)-polarization-dominant emission. high optical confinement factor 9.12% benefiting from low refractive index is key to enable low-threshold lasing. I–V electrical measurement demonstrates that...
Abstract The increasing demand for multispectral information acquisition and the complexity of application environments have sparked a growing interest in broadband detection. However, achieving high level responsivity across wide response range remains significant challenge. Herein, an ultrasensitive phototransistor based on hybrid photogating (HPG) structure is demonstrated, which consisted quasi‐2D beta‐phase gallium oxide (β‐Ga 2 O 3 ) nanoflake as carrier transport channel tellurium...
AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) have potential applications in free-space communication, but their current limited efficiency restricts the further development of communication (FSUC) applications. In this work, an etched reflective array (ERA) strategy has been proposed DUV micro-LEDs with various pixel sizes 20, 30, and 60 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu...
Motivated by improving the performance of self-powered deep-UV (DUV) photodetector (PD), for first time, Pt plasmonic nanoparticles (NPs) were embedded in hybrid PEDOT: PSS/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 heterojunction interface to maximize light-matter interaction. Profiting from maximized direct enhancement optical field active region NPs...
Solar blind ultraviolet (UV) photodetectors (PDs) based on III-nitrides, Silicon Carbide (SiC), and other wide bandgap semiconductors such as diamond Gallium Oxide (Ga2O3)offer excellent device performance low...
Motivated by the goals of fabricating highly reliable, high performance, and cost-efficient self-powered photodetector (PD) for numerous scientific research civil fields, an organic-inorganic hybrid solar-blind ultraviolet (UV) PD based on PEDOT: PSS/exfoliated β-Ga2O3 microwire heterojunction was fabricated a flexible cost-effective assembly method. Benefiting from constructed crystalline excellent hole transport layer PSS, device presents responsivity 39.8 mA/W at 250 nm sharp cut-off edge...
In this Letter, we report on deep UV laser emitting at 249 nm based thin GaN quantum wells (QWs) by optical pumping room temperature. The threshold was 190 kW/cm2 that is comparable to state-of-the-art AlGaN QW lasers similar wavelengths. structure pseudomorphically grown a c-plane sapphire substrate metalorganic chemical vapor deposition, comprising 40 pairs of 4 monolayer (ML) QWs sandwiched 6 ML AlN barriers (QBs). low the wavelength attributed large and confinement high quality material,...
A simple strategy for the mass production of high-quality AlN epilayers on flat sapphire by utilizing a dislocation filtering layer.
Currently, white light-emitting diodes (WLEDs) have been widely applied in lighting, display, and medical fields. However, there still exists the problem of low color rendering index (CRI, Ra). In this work, phosphor-converted WLEDs (pc-WLEDs) with ultrahigh Ra were fabricated using Y <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Al Ga xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O...
Cr/Al/Ti/Au stacks with two thicknesses of Al layers were employed as reflective n-type electrodes for 274 nm AlGaN-based flip-chip deep ultraviolet light-emitting diodes (DUV LEDs). Large bulges arose in the annealed electrode 120-nm-thick layer, resulting cracks within upper rugged SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> passivation layer after burn-in test. Sn atoms from solder paste migrated along and served leakage...
In this paper, we demonstrated wafer-scale AlGaN-based deep ultraviolet (DUV) nanoporous (NP) distributed Bragg reflectors (DBRs) by vertical electrochemical (EC) etching. The stopbands of the NP-DBRs were centered around 280 nm with reflectance close to 90%. A thick AlGaN film and four-period multiple quantum wells (MQWs) grown on strain-relaxed template. reciprocal space mappings (RSMs) revealed increased compressive strain in MQWs NP-DBRs, transverse electric (TE) mode emission was...
In this article, we developed a color converter of phosphor-AlN-sapphire (PAS) plate to enhance the heat dissipation phosphor film in high-power white light-emitting diodes (WLEDs). The improved performance is observed by introducing AlN with high thermal conductivity (TC), which was demonstrated finite-element analysis (FEA) simulation. proposed PAS prepared printing and sintering yellow on an AlN-coated sapphire plate. It that TC increased reduction threading dislocation (TD) density film....
We have demonstrated a record short wavelength lasing at 244.63 nm with TE dominant polarization from GaN quantum wells (QWs) room temperature (RT). The optical threshold of 310 kW/cm2 is comparable to state-of-the-art AlGaN QW lasers similar wavelengths. sample was grown on the AlN/sapphire template pesudomorphically. X-ray diffraction (XRD) shows unambiguous higher-order satellite peaks indicating sharp interface amid active region. excitonic localization revealed and studied by...
In this article, a photodetector (PD) based on nanoporous (NP) AlGaO/AlGaN with efficient light capture and enhanced shortwave deep-UV (DUV) response has been demonstrated.
Deep ultraviolet (DUV) LEDs have great potential in sterilization, water, air purification, and other fields. In this work, DUV LED wafers with different quantum well (QW) widths were grown by metal–organic chemical vapor deposition. It is found that the light output power (LOP) peak wavelength of all chips are not only related to QW thickness but also affected warpage. For first time, best our knowledge, a positive correlation between LOP on same wafer was observed, which very important for...
In this paper, we reported on wafer-scale nanoporous (NP) AlGaN-based deep ultraviolet (DUV) distributed Bragg reflectors (DBRs) with 95% reflectivity at 280 nm, using epitaxial periodically stacked n-Al0.62Ga0.38N/u-Al0.62Ga0.38N structures grown AlN/sapphire templates via metal-organic chemical vapor deposition (MOCVD). The DBRs were fabricated by a simple one-step selective wet etching in heated KOH aqueous solution. To study the influence of temperature electrolyte nanopores formation,...
In this work, we demonstrated tunable structured AlGaN-based nanoporous (NP) distributed Bragg reflectors (DBRs) with high-reflectivity through one-step vertical-lateral electrochemical etching (ECE). The aperture of nanopores in the doping layer and size density V-pits on surface NP-DBRs can be tuned by controlling bias. Furthermore, further tuning thickness alternating layers, achieved high reflectivity at multiple center wavelengths within wavelength range from 280 to 800 nm. To explore...
In this letter, we report on wafer-scale nanoporous (NP) AlGaN-based deep ultraviolet (DUV) distributed Bragg reflectors (DBRs) with 95% reflectivity at 280 nm, using epitaxial periodically stacked nAl 0.62 Ga 0.38 N/u-Al N structures grown AlN/sapphire templates via metal-organic chemical vapor deposition (MOCVD). The DBR was fabricated by a simple one-step selective wet etching in heated KOH aqueous solution. To study the influence of temperature electrolyte nanopores formation, amount...
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