A5086081108- Ga2O3 and related materials
- Solid State Laser Technologies
- GaN-based semiconductor devices and materials
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Ocular and Laser Science Research
- Plasmonic and Surface Plasmon Research
- Photonic and Optical Devices
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Advanced Fiber Laser Technologies
- Semiconductor Lasers and Optical Devices
- solar cell performance optimization
Wuhan National Laboratory for Optoelectronics
2023-2025
Huazhong University of Science and Technology
2023-2025
University of Chinese Academy of Sciences
2015
Abstract The efficiency of AlGaN based deep ultraviolet light‐emitting diode (DUV LEDs) are mainly hindered by the light extraction issue. In this work, an innovative cooperative scattering structure is introduced that combines a nanopore configuration with aluminum (Al) nanoparticle array on n‐AlGaN layer DUV LEDs. integration these two arrays can enhance mitigating total internal reflection at device interface. nanopores formed surface electrochemical etching and optimized varying voltage,...
Multispectral detection technology captures characteristic spectral information across various wavebands, exhibiting substantial application potential. However, most currently reported multispectral photodetectors rely on intricate dual- or multi-junction structures, severely limiting material thickness, doping concentration, and band alignment design, thereby impeding widespread adoption. In this study, a bias-tunable photodetector featuring straightforward single-junction design is...
Improving the power and efficiency of 9xx-nm broad-area laser diodes has a great help in reducing cost systems expanding applications. This letter presents an optimized epitaxial structure with high conversion efficiency. Laser 230 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> emitter width 5 mm cavity length deliver continuous-wave output up to 48.5 W at 48 A,...
One of the persistent obstacles for high-power laser diodes (LDs) has been catastrophic optical mirror damage (COMD), which limits operating power level and lifetime commercial LDs. The output facet LD reaches a critical temperature resulting in COMD, is an irreversible device failure. Here, we fabricate multi-section LDs by tailoring waveguide structure along cavity that separates from heat-generating lasing region. In this method, divided into electrically isolated window sections cavity....
Lattice-matched InGaAs(P) photovoltaic devices were grown on InP substrates by metal-organic chemical vapor deposition. InGaAsP/InGaAs (1.07/0.74 eV) dual-junction (DJ) solar cells fabricated and characterized quantum efficiency I–V measurements. The open circuit voltage, short current density, fill factor, of DJ cell are 0.977 V, 10.2 mA/cm2, 80.8%, 8.94%, respectively, under one sun illumination the AM 1.5D spectrum. For cell, with increasing concentration, conversion first increases...