A5100433192- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Ga2O3 and related materials
- Metal and Thin Film Mechanics
- Thin-Film Transistor Technologies
- Diamond and Carbon-based Materials Research
- Photocathodes and Microchannel Plates
- Acoustic Wave Resonator Technologies
- TiO2 Photocatalysis and Solar Cells
- Rare-earth and actinide compounds
- Nanowire Synthesis and Applications
- Crystal Structures and Properties
- Phase-change materials and chalcogenides
- Nanomaterials and Printing Technologies
- Quantum Dots Synthesis And Properties
- Advanced Surface Polishing Techniques
- Advanced Photocatalysis Techniques
- Glass properties and applications
- Mineralogy and Gemology Studies
China Nonferrous Metal Mining (China)
2024
Huazhong University of Science and Technology
2011-2020
Wuhan National Laboratory for Optoelectronics
2014-2020
State Council of the People's Republic of China
2018
South China Normal University
2014
Yantai University
2002
In this work, combined analysis of internal strain effects on optical polarization and quantum efficiency (IQE) were conducted for the first time. Deep ultraviolet light extraction AlGaN multiple wells (MQWs) have been investigated by means polarization-dependent photoluminescence (PD-PL) temperature-dependent (TD-PL). With increase compressive applied to MQWs an underlying n-AlGaN layer, degree (DOP) sample was improved from -0.26 -0.06 leading significant enhancement (LEE) as PL intensity...
Anisotropic optical polarization of AlGaN has been one the major challenges responsible for poor efficiency AlGaN-based ultraviolet light emitting diodes (UV LEDs). In this work, we experimentally investigated effect internal strain on epilayers which were pseudomorphically grown Al x Ga1?x N templates with composition changing from 0.1 to 0.42. High-resolution x-ray diffraction and reciprocal space mapping conducted determine crystal quality status. Polarization-dependent photoluminescence...
Flip-chip ultraviolet light-emitting diode (FC UV-LED) fabricated by direct AuSn eutectic package is of high interest in Research and Development due to its excellent thermal performance good reliability. However, the voids bonding layer lack filled have a big influence on management optical FC UV-LEDs, it believed that can affect thermal-conduction resistance (the following unified called resistance) junction temperature UV-LEDs. In this paper, modeling simulation using finite element...
A simple strategy for the mass production of high-quality AlN epilayers on flat sapphire by utilizing a dislocation filtering layer.
In this study, we proposed a novel method to grow high-quality AlN films on sputtered AlN/sapphire substrates by designing an gradient interlayer (GIL-AlN).
In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling local surface plasmons from Al nanoparticles (NPs) on SiO2 dielectric interlayer with excitons and photons MQWs at room temperature. comparison to bare AlGaN MQWs, significant 2.3-fold internal quantum efficiency, 16% 37%, as well 13% photon extraction efficiency have been observed decorated NPs...
The hexagonal wurtzite GaN nanowires embedded in the nanochannels of anodic alumina membrane were achieved by direct reaction Ga vapour with a constant flowing ammonia atmosphere. X-ray diffraction (XRD), scanning electron microscopy and transmission used to measure size structures samples. Raman scattering spectrum ordered was studied. nanowire arrays is consistent structure GaN, agreement XRD observation. E2(high), E1(TO), A1(TO) phonon frequencies at 563, 553, 529 cm-1 show low-energy...
Nonpolar a-plane n-ZnO/p-AlGaN heterojunction light-emitting diodes (LEDs) have been prepared on r-sapphire substrate using metal organic chemical vapor deposition and a pulsed laser method. The dominant electroluminescence emission at 390 nm from the interband transition in n-ZnO layer under forward bias was observed. Interestingly, with 385 based an avalanche mechanism also achieved reverse bias. mechanisms of both I–V characteristics are discussed detail by considering effect. It is...
The full-spatial decomposition of transverse electric (TE)/transverse magnetic (TM) mode in AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) has been experimentally investigated by introducing self-built light intensity test system mainly composed angle resolution bracket, Glan–Taylor prism and spectrometer. Through roughening the sapphire sidewall, extraction efficiency DUV-LED is improved, for both TE TM with no polarization selectivity. introduction metrology reflected via...
We report on the demonstration of a 386 nm light emission and detection dual-functioning device based nonpolar a-plane n-ZnO/i-ZnO/p-Al0.1Ga0.9N heterojunction under both forward reverse bias. The electroluminescence intensity bias is significantly stronger than that bias, facilitated by carrier tunneling when valence band p-AlGaN aligns with conduction i-ZnO Also amid photodetection was observed applied in duplex optical communication device. Optical polarization studied for potential...
Patterned sapphire substrate (PSS) is effective approach to improve external quantum efficiency of light emitting diode (LED) chip. The round holes pattern was studied in this paper. Simulation used study how changes different parameters the for flip GaN-based LEDs fabricated PSS. Through a series comparisons on simulation results, maximum enhancement LED’s 15% compared non-patterned (non-PSS) LED most pattern.