A5039032307- ZnO doping and properties
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
Hubei University
2023
Nonpolar a-plane ZnO layers with anisotropic in-plane strains were prepared on the three substrates of r-sapphire, a-GaN, and a-Al0.08GaN templates via a pulsed laser deposition system, to investigate distinguishing photoluminescence properties a-ZnO grown foreign substrates. The optical anisotropy nonpolar GaN AlGaN was investigated polarization-dependent (PL) measurement polarization transmission spectra measurement. 0.3 μm layer a-GaN template has significant degree (DOP) spectrum about...
We explore the possibility of tuning metal-to-insulator transition (MIT) crystalline VO2 thin films by strain engineering. deposit high-quality epitaxial different thicknesses on TiO2 (110) substrates pulsed laser deposition. The state deposited film varies with its thickness. This allows us to correlate MIT characteristics a careful characterization structural and electrical properties. Thin are almost fully strained up about 20 nm exhibit tensile along c axis (high-temperature) metallic...
Nonpolar a-plane n-ZnO/p-AlGaN heterojunction light-emitting diodes (LEDs) have been prepared on r-sapphire substrate using metal organic chemical vapor deposition and a pulsed laser method. The dominant electroluminescence emission at 390 nm from the interband transition in n-ZnO layer under forward bias was observed. Interestingly, with 385 based an avalanche mechanism also achieved reverse bias. mechanisms of both I–V characteristics are discussed detail by considering effect. It is...