A5102748140- 2D Materials and Applications
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Graphene research and applications
- Conducting polymers and applications
- Advanced Photocatalysis Techniques
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Advanced Sensor and Energy Harvesting Materials
- Transition Metal Oxide Nanomaterials
- Advanced Thermoelectric Materials and Devices
- Electrochemical sensors and biosensors
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Magnetic properties of thin films
- Physics of Superconductivity and Magnetism
- Boron and Carbon Nanomaterials Research
- Photonic and Optical Devices
- Photoreceptor and optogenetics research
- Electronic and Structural Properties of Oxides
- Analytical Chemistry and Sensors
- Neural Networks and Reservoir Computing
- Ferroelectric and Negative Capacitance Devices
Beihang University
2016-2025
University of California, Los Angeles
2017-2020
Beijing Computational Science Research Center
2016
Chinese Academy of Sciences
2012-2015
Institute of Semiconductors
2012-2015
Zhejiang Normal University
2014
Diodes (China)
2014
Tsinghua University
2014
Northeast Normal University
2010-2013
Georgia Institute of Technology
2010
Two-dimensional (2D) layered inorganic nanomaterials have attracted huge attention due to their unique electronic structures, as well extraordinary physical and chemical properties for use in electronics, optoelectronics, spintronics, catalysts, energy generation storage, sensors. Graphene related analogues shown great potential gas-sensing applications because of large specific surface areas strong activities. This review aims discuss the latest advancements 2D materials gas We first...
The photoelectrical properties of multilayer WS2 nanoflakes including field-effect, photosensitive and gas sensing are comprehensively systematically studied. transistors perform an n-type behavior with electron mobility 12 cm2/Vs exhibit high characteristics response time (τ) <20 ms, photo-responsivity (Rλ) 5.7 A/W external quantum efficiency (EQE) 1118%. In addition, charge transfer can appear between the physical-adsorbed molecules, greatly influencing our devices. ethanol NH3 molecules...
Creating materials with ultimate control over their physical properties is vital for a wide range of applications. From traditional design perspective, this task often requires precise the atomic composition and structure. However, owing to mechanical properties, low-dimensional layered can actually withstand significant amount strain thus sustain elastic deformations before fracture. This, in return, presents unique technique tuning by "strain engineering". Here, we find that local induced...
Abstract Two‐dimensional (2D) materials have attracted extensive research interests due to their excellent properties related unique structure. Strain engineering, as an important strategy for tuning the lattice and electronic structure of 2D materials, has been widely used in modulation physical properties, which broadens applications flexible nanoelectronic optoelectronic devices. In this review, we first summarize methods inducing strain discuss advantages problems various methods. We...
The structural and electronic properties of the bulk ultrathin black phosphorus effects in-plane strain out-of-plane electrical field on structure phosphorene are investigated using first-principles methods. computed results show that few-layer from monolayer to six-layer demonstrates inherent direct bandgap features ranging 0.5 1.6 eV. Interestingly, band structures X point via A Y present degenerate distribution, which shows totally different partial charge dispersions. Moreover, strong...
The ability to control the appropriate layer thickness of transition metal dichalcogenides (TMDs) affords opportunity engineer many properties for a variety applications in possible technological fields. Here we demonstrate that band-gap and mobility ReSe2 nanosheet, new member TMDs, increase when number decreases, thus influencing performances transistors with different layers. A single-layer transistor shows much higher device 9.78 cm2 V−1 s−1 than few-layer (0.10 s−1). Moreover, high...
Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p–n heterojunction transistors, where the resulting device possesses unique properties self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased...
Layered GaS nanosheets have been attracting increasing research interests due to their highly anisotropic structural, electrical, optical, and mechanical properties, which are useful for many applications. However, single-layer or few-layer GaS-based photodetectors rarely reported. Here a two-terminal photodetector with fast stable response has fabricated. It shows different photo-responses in various gas environments. A higher photo-response (64.43 W(-1)) external quantum efficiency (EQE)...
Abstract Anisotropic 2D materials exhibit unique optical, electrical, and thermoelectric properties that open up possibilities for diverse angle‐dependent devices. However, the explored anisotropic are very limited methods to identify crystal orientations study in‐plane anisotropy in initial stage. Here azimuth‐dependent reflectance difference microscopy (ADRDM), angle‐resolved Raman spectra, electrical transport measurements used systematically characterize influence of structure on optical...
van der Waals (vdW) magnetic insulators are of significance in both fundamental research and technological application, but most two-dimensional (2D) vdW systems unstable high lattice symmetry. Stable 2D with anisotropic structure needed to modulate the properties unlock potential applications. Here we present a stable antiferromagnetic material, CrOCl, low-symmetry orthorhombic structure, investigate systematically its magnetism, phase transition behavior, optical anisotropy. Spin-phonon...
Transition metal dichalcogenides (TMDCs) have recently been the focus of extensive research activity owing to their fascinating physical properties. As a new member TMDCs, Mo doped ReSe2 (Mo:ReSe2) is an octahedral structure semiconductor being optically biaxial and highly anisotropic, different from most hexagonal layered TMDCs with uniaxial relatively high crystal symmetry. We investigated effects physisorption gas molecule on few-layer Mo:ReSe2 nanosheet based photodetectors. compared...
The exchange bias effect is extremely expected in 2D van der Waals (vdW) ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures due to the high-quality interface. CrOCl possesses strong magnetic anisotropy at limit, and an ideal antiferromagnet for constructing FM/AFM explore effect. Here, Fe3 GeTe2 (FGT)/CrOCl through both anomalous Hall (AHE) reflective circular dichroism (RMCD) measurements studied. In AHE measurements, field (HEB ) 3 K exhibits a distinct increase from ≈150 Oe ≈450...
Synthesis of large-scale highly crystalline two-dimensional alloys is significant for revealing properties. Here, we have investigated the vapor growth process high-quality bilayer CoxMo1-xS2 (x = 0.16) hexagonal nanosheets systematically. As initial loading sulfur increases, morphology (0 < x ≤ 1) becomes hexagons from David stars step by at 680 °C. We find that Co atoms mainly distribute edge nanosheets. When temperature increases to 750 °C, cubic pyrite-type crystal structure CoS2 grows...
In-plane anisotropy of layered materials adds another dimension to their applications, opening up avenues in diverse angle-resolved devices. However, fulfill a strong inherent in-plane still poses significant challenge, as it often requires low-symmetry nature materials. Here, we report the fabrication member semiconducting AIIIBVI compounds, TlSe, that possesses tetragonal structure and investigate its anisotropic light–matter interactions. We first identify Raman intensity thin-layer...
Novel MoSe2 flower-like nanostructures were produced by a facile hydrothermal method. Devices containing such also fabricated and reveal obvious photo-responsive characteristics. SEM HRTEM images show that the as-prepared products have structure, diameter of single particle is about 500 nm. The average atomic ratio between Se Mo 2.68 according to results EDS measurements. characteristics responding red illumination device with investigated for first time mechanism photoresponse was proposed....
The vertically stacked MoTe<sub>2</sub>/MoS<sub>2</sub> p–n heterojunctions have excellent electronic and optoelectronic characteristics with a type-II band alignment.
van der Waals heterojunctions formed by stacking various two-dimensional (2D) materials have a series of attractive physical properties, thus offering an ideal platform for versatile electronic and optoelectronic applications. Here, we report few-layer SnSe/MoS2 study their electrical characteristics. The new present excellent transport characteristics with distinct rectification effect high current on/off ratio (∼1 × 105). Such type-II heterostructures also generate self-powered...
Constructing high-quality homojunctions plays a pivotal role for the advancement of two-dimensional transition metal sulfide (TMDC) based optoelectronic devices. Here, lateral PdSe2 p-i-n homojunction is constructed by electrostatic doping. Electrical measurements reveal that diode exhibits strong rectifying characteristic with rectification ratio exceeding 104 and an ideality factor approaching 1. When functioning in photovoltaic mode, device achieves high responsivity 1.1 A/W under 1064 nm...
Abstract Optoelectronic synapses are currently drawing significant attention as fundamental building blocks of neuromorphic computing to mimic brain functions. In this study, a two‐terminal synaptic device based on doped PdSe 2 flake is proposed imitate the key neural functions in an optical pathway. Due wavelength‐dependent desorption oxygen clusters near intrinsic selenide vacancy defects, photodetector achieves high negative photoresponsivity −7.8 × 10 3 A W −1 at 473 nm and positive 181...
We demonstrate a relatively independent UV photodetector which is composed of one layer p-type PANI nanowires and two layers n-type ZnO nanorods. Different to other photoelectronic nanodevices, it doesn't need any external power source except light when works.