A5013645993- Graphene research and applications
- Semiconductor Quantum Structures and Devices
- Advanced Materials Characterization Techniques
- Photonic and Optical Devices
- Nanowire Synthesis and Applications
- 2D Materials and Applications
- Silicon Nanostructures and Photoluminescence
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Machine Learning in Materials Science
- Topological Materials and Phenomena
- Force Microscopy Techniques and Applications
- Electrocatalysts for Energy Conversion
- MXene and MAX Phase Materials
- Boron and Carbon Nanomaterials Research
- Ga2O3 and related materials
- Thermal Radiation and Cooling Technologies
- Semiconductor Lasers and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Millimeter-Wave Propagation and Modeling
- Thermal properties of materials
- Semiconductor materials and interfaces
- Diamond and Carbon-based Materials Research
- Hydrogen embrittlement and corrosion behaviors in metals
- Quantum many-body systems
Zhejiang University
2007-2024
Hangzhou City University
2023-2024
City University
2023-2024
State Key Laboratory of Silicon Materials
2020-2022
City College
2022
The University of Sydney
2010-2017
Southern Medical University
2014
Nanfang Hospital
2014
Australian National University
2007-2008
After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery graphene, field 2D electronics has reached stage with booming and device architectures. However, efficient integration functional layers three-dimensional (3D) systems remains significant challenge, limiting performance circuit design. In this review, we investigate experimental efforts in interfacing 3D analyze properties heterojunctions formed between them. The contact resistivity metal...
Highly sensitive photodetection even approaching the single-photon level is critical to many important applications. Graphene-based hybrid phototransistors are particularly promising for high-sensitivity because they have high photoconductive gain due mobility of graphene. Given their remarkable optoelectronic properties and solution-based processing, colloidal quantum dots (QDs) been preferentially used fabricate graphene-based phototransistors. However, resulting QD/graphene face challenge...
Charge carrier scattering channels in graphite bridging its valence and conduction band offer an efficient Auger recombination dynamic to promote low energy charge carriers higher states. It is of importance answer the question whether a large number can be promoted states enhance quantum efficiency photodetectors. Here, we present experimental demonstration effective process photo-excited nano-graphite film. The time-resolved hot thermalization was analyzed based on dissipation via...
This work presents a novel InGaAs/InP avalanche photodiode fabricated in the separate absorption, grading, charge, and multiplication configuration operated at non-cryogenic conditions under low-frequency ramp gating. An optimized three stage InP layer of 1μ <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</i> thickness offers extended linear mode operation by reducing punch-through voltage indefinitely increasing threshold voltage. A large...
The hot electrons in carbon-based materials exhibit interesting ballistic transport behaviors for designing high-performance single-electron transistors. However, the cooling of such back to equilibrium state may be slowed down by excessively populated optical phonons, thus limiting their transport. Therefore, a thorough understanding coupling between and phonons is critical importance. Here, varying thickness multilayer graphene film on supporting substrate, we investigated competition...
High-performance photodetectors operating over a broad wavelength range from ultraviolet, visible, to infrared are of scientific and technological importance for wide applications. Here, photodetector based on van der Waals heterostructures graphene its fluorine-functionalized derivative is presented. It consistently shows broadband photoresponse the ultraviolet (255 nm) mid-infrared (4.3 µm) wavelengths, with three orders magnitude enhanced responsivity compared pristine photodetectors. The...
Abstract Graphene with linear energy dispersion and weak electron–phonon interaction is highly anticipated to harvest hot electrons in a broad wavelength range. However, the limited absorption serious backscattering of hot‐electrons result inadequate quantum yields, especially mid‐infrared Here, we report macroscopic assembled graphene (nMAG) nanofilm/silicon heterojunction for ultrafast photodetection. The Schottky diode works 1.5–4.0 μm at room temperature fast response (20–30 ns, rising...
Abstract Among light-based free-space communication platforms, mid-infrared (MIR) light pertains to important applications in biomedical engineering, environmental monitoring, and remote sensing systems. Integrating MIR generation reception a network using two identical devices is vital for the miniaturization simplification of communications. However, conventional emitters receivers are not bidirectional due intrinsic limitations low performance often require cryogenic cooling. Here, we...
We report the atomic-scale observation of parallel development super elasticity and reversible dislocation-based plasticity from an early stage bending deformation until fracture in GaAs nanowires. While this phenomenon is sharp contrast to textbook knowledge, it expected occur widely nanostructures. This work indicates that recoverable nanomaterials not simple elastic or plastic nature, but coupling both.
MicroRNAs (miRNAs) have important roles in various types of cellular biological processes. Our study aimed to determine whether miRNAs function the regulation ionizing radiation (IR)-induced cell death auditory cells and how they affect response IR. Microarray qRT-PCR were performed identify confirm differential expression cochlea hair line HEI-OC1 vivo after Upregulation or downregulation using miRNA mimics inhibitor detected characterize effects indicated miRNAs. Bioinformatic analyses,...
An improvement for the generic particle filter (PF) is to add a roughening step in resampling. This paper studied reentry vehicle tracking problem using PF with roughening. A novel algorithm calculate reasonable standard deviation of jitter proposed. For comparison, Unscented Kalman filter, and typical are used gauge estimation performance, results favor proposed method. The have low probabilities success under conditions comparatively large initialization bias accurate radar measurement....
III–V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applications; however, the 3D structure chemistry at atomic‐scale inside remain unclear, which hinders tailoring specific applications. Here, atom probe tomography is used in conjunction with a first‐principles simulation to investigate of nanowires, reveals i) form spontaneous core–shell Ga‐enriched core an In‐enriched shell, due different growth mechanisms axial lateral directions; ii) shape...
Abstract Novel fluffy Fe@ α -Fe 2 O 3 core-shell nanowires have been synthesized using the chemical reaction of ferrous sulfate and sodium borohydride, as well post-annealing process in air. The coercivity as-synthesized is above 684 Oe temperature range 5 to 300 K, which significantly higher than that bulk Fe (approximately 0.9 Oe). Through annealing air, exchange field are evidently improved. Both increase with increasing time ( T A ) reach their maximum values 1,042 78 Oe, respectively,...
In this article, the skin and proximity effects formulas of solid hollow conductors with different radii are accurately formulated using exact expressions electric magnetic fields around them. Moreover, both approximation simplification developed also provided for higher frequency applications, where depth is significantly smaller than conductor radius. Consequently, it shown that these approximate can help us to understand coupling mechanisms noncoaxial twinax cables shields, transfer...
Due to limited short-wavelength infrared (SWIR) (1.1-2.5 μm) response of silicon (Si), germanium and indium-gallium-arsenide based photodetectors have dominated the commercial market SWIR for decades. However, they are often constrained by high-temperature processing, spectral range, flexible incompatibility, cryogenic cooling accessories. Therefore, it is important develop that can be directly integrated with complementary-metal-oxide-semiconductor devices. In this work, we demonstrate a...
In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied compared. Photoluminescence spectroscopy was used for monitoring the changes optical properties of wells due to interdiffusion. X-ray photoelectron investigate interfacial reaction between QW structure dielectric capping layer. The results compared discussed based on sublattices' interdiffusion, promotion or suppression under layers.
We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) multi-wavelength devices are compared those as-grown differences explained terms altered energy level spacing annealed dots.