A5040192200- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Radiation Detection and Scintillator Technologies
- Electrostatic Discharge in Electronics
- Radiation Therapy and Dosimetry
- VLSI and Analog Circuit Testing
- Particle Detector Development and Performance
- Advancements in Semiconductor Devices and Circuit Design
- Ion-surface interactions and analysis
- Distributed systems and fault tolerance
- Graphite, nuclear technology, radiation studies
- Advanced Memory and Neural Computing
- Nuclear Physics and Applications
- Spacecraft Design and Technology
- Diamond and Carbon-based Materials Research
- Solar and Space Plasma Dynamics
- Electron and X-Ray Spectroscopy Techniques
- CCD and CMOS Imaging Sensors
- Silicon and Solar Cell Technologies
- Parallel Computing and Optimization Techniques
- Advanced Battery Technologies Research
- Advanced Data Storage Technologies
- Calibration and Measurement Techniques
- Advanced Optical Sensing Technologies
Centre National d'Études Spatiales
2016-2025
Bioengineering Center
2017
National Center for Genetic Engineering and Biotechnology
2017
John Wiley & Sons (United States)
2017
Institut Universitaire de France
2016
Jet Propulsion Laboratory
2015
European Space Agency
2009-2014
Ball (France)
2014
National Superconducting Cyclotron Laboratory
2014
Michigan State University
2014
In this paper, the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA SEP <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ) is presented. This platform dedicated to predicting SEE cross sections or rates and evaluated thanks on-board operational results on memories from ICARE experiment (SAC-C mission). It allows for investigating single multiple events thus, MUSCA helps at estimating sensitivity trend nano-metric technology...
A new methodology of prediction for SEU is proposed based on SET modeling. The modeling multi-node charge collection performed using the ADDICT model predicting single event transients and upsets in bulk transistors SRAMs down to 65 nm. predicted upset cross sections agree well with experimental data SRAMs.
Abstract We present the study of response a Timepix2 detector (256 × 256 pixels, pixel pitch 55 µm) with 500 µm thick silicon sensor in laboratory measurements α sources, charged particle beams relativistic ion fragments at Super-Proton-Synchrotron CERN and short-ranged heavy Heavy Ion Facility UCLouvain Belgium: 22 Ne, 53 Cr 103 Rh 238, 505 957 MeV, respectively. The was used adaptive gain mode, calibrated using previously developed methodology protons energies range from keV to 2 MeV...
Abstract Low-frequency noise spectroscopy is a promising characterization technique for nanoscale devices and failure analysis investigations. This article describes shows how low-frequency can be applied to identify stable traps induced by proton irradiations on silicon passive devices. The work focuses located in the depleted region of semiconductor material already studied transistor technologies.
This paper presents and explains test results showing the effect of ion species on single event burnout (SEB) failure voltage using a SEB sensitive engineering power double diffused metal oxide silicon field transistor (DMOSFET). The analyses show determining factor tested is itself rather than or beam conditions such as initial energy, surface linear energy transfer (LET), range, ionized charge. Also, from five facilities setups are compared to determine if there will be differences in when...
The effects of heavy-ion test conditions and beam energy on device response are investigated. These illustrated with two types vehicles: SRAMs power MOSFETs. In addition, GEANT4 simulations have also been performed to better understand the results. Testing high fluence levels is required detect rare events. This increases probability nuclear interactions. typically case for MOSFETs, which tested at fluences single event burnout or gate rupture detection, single-event-upset (SEU) measurement...
TCAD simulations of a 90 nm CMOS bulk technology have been performed to investigate how technologies parameters impact on the collection charge leading Single Event Effects. This work proposes an improved diffusion model.
This paper presents the investigation of upset induced by direct ionisation proton in 65nm technology and evaluates operational SER consequences space, atmospheric ground environments.
Linear and two-photon laser testing is used to investigate the single-event latchup sensitive depth of SRAM CY7C1069 embedded in CARMEN satellite experiment. Results are discussed compared with heavy ion flight data.
The synergistic effect between Total Ionizing Dose (TID) and Analog Single Event Transient (ASET) in LM124 operational amplifiers (opamps) from three different manufacturers is investigated. This clearly identified on only two by three, highlighting manufacturer dependent. In fact, significant variations were observed both the TID sensitivity ASET response of devices manufacturers. Hypotheses are made cause differences observed. A previously developed simulation tool used to model transient...
This paper presents the single-event upset characterization of a commercial field programmable gate array (FPGA) using electron radiation. FPGA radiation test results under high energy electrons are described and dependence between SEU cross section is highlighted. A technological performed to evaluate back end line (BEOL) layers composition thickness. These values used perform Monte Carlo simulations exposed 20-MeV primary beam. Calculation show that able generate on embedded RAM confirmed...
Analog Transient Radiation Effects in Electronics (ATREE) induced by high dose-rate X-ray pulses are investigated using a flash facility. The ATREEs LM124 operational amplifier configured three different bias configurations investigated. A predictive methodology, based upon previously developed ASET simulation tool, is used to model the ATREE phenomena. semiempirical physical perform correlation between duration of parasitic pulse signal and an equivalent value level.
The effects of heavy-ion test conditions and beam energy on device response are investigated. These illustrated with two types vehicles; SRAMs power MOSFETs. In addition, GEANT4 simulations have also been performed to better understand the results.
The sensitivity of memory devices under proton irradiation has been extensively studied over the years. Two main mechanisms have identified to drive single-event upset (SEU) in last generation devices: direct ionization for low energies and inelastic nuclear reactions higher energies. Some papers shown that Coulomb elastic contribution should be considered. This paper supports this conclusion proposes analyses order show importance according technological node studied.
This paper presents the PIX instrument based on a raspberry Pi and MiniPIX device dedicated to make measurements of ionizing particles onboard stratospheric balloons. The hardware part software are described. All characteristics given in this paper. three flight opportunities also presented, with associated measurements. methodology calculate fluxes is explained. In particular, calculation response functions protons, electrons, photons by using Monte-Carlo simulations, identification...
The Synergistic effect between TID and ATREEs (Analog Transient Radiation Effects on Electronics) in an operational amplifier (opamp) (LM124) is investigated for three different bias configurations. An accelerated irradiation technique used to study these synergistic effects. impact of found be identical regardless whether the performed at low dose rate or switched from high using Dose Rate Switching (DRS) technique. correlation deviations opamp's electrical parameters changes ATREE widths...
Charge collection is used as a non-destructive technique to analyze the statistical response of vertical power MOSFETs and their single-event burnout (SEB) rate function incident ion energy. Two effects are observed at either low or high At energy, collected charge significantly decreases because limited range energy straggling in thick epitaxial layer. Because this effect, using ions for SEB testing can underestimate rate. presence source bond wires, which partially cover die area,...
A method and the corresponding platform devoted to operational SEE-rate prediction are presented illustrated by experimental results. Predicted error-rates in well agreement with results issued from activation of an SRAM platform, 90 nm technology node, on board stratospheric balloons flights. Direct ionization protons is investigated for a 65 memory virtually boarded balloon flight.
The Synergistic effect between Total Ionizing Dose (TID) and Analog Transient Radiation Effects in Electronics (ATREE) an operational amplifier (LM124) is investigated. A predictive methodology, based on a previously developed ATREEs simulation tool, used to model the synergistic phenomena. This phenomenon simulated for first time duration of ATREEs' found be identical those measured experimentally. induced by high dose-rate X-ray pulses are investigated using flash facility. LM124...
The CARMEN2/MEX instrument has been measuring radiation effects on electronic devices board the JASON2 satellite since June 22 2008. This paper presents updated data concerning destructive phenomena and complementary observations for cumulative Single Event Transients.
This article presents in-flight single-event effects (SEEs), total ionizing dose (TID), and nonionizing (TNID) data collected since 2008 by Centre National d'Etudes Spatiales (CNES) with CARMEN-MEX experiment on board various satellites placed in low-Earth orbit (LEO) or geostationary orbits (GEOs).
This paper presents experimental data showing heavy ions inducing gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. During irradiation, ion ranges tuned such way to control whether they hit or not. Gate-to-source current Igss (Phi) is measured versus (H.I.) fluence Phi. Post-irradiation-gate-stress-test (PGST) allows measurement of breakdown voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The main objective of the work presented here is to explore ability laser irradiations determine SET sensitive depths a linear device by using several wavelengths. Laser testing at two wavelengths allows estimation depths. approach conducted applied for first time with very deep depth. 1064 nm wavelength seems be most adequate one reveal all areas and, when comparing heavy ion experimental data,...
MEX Experience Module is a part of CARMEN2 instrument launched in June 22 2008 aboard JASON2 satellite. This scientific dedicated to the study effects space radiation environment on various electronic devices. Among all phenomena studied this experiment, paper focuses data collected destructive SEEs: Latch-up commercial SRAMs and Burnout power MOSFETs.
Displacement damage dose was measured over 26 months on the CARMEN-2 experiment using feedback loop of an Optically Stimulated Luminescence (OSL) sensor. These in-flight results are analyzed and discussed addressing issue temperature dependence energy correction. A comparison between data ground tests measurement validates this method.