Halubai Sekhar

ORCID: 0000-0003-3574-3878
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Research Areas
  • Nonlinear Optical Materials Studies
  • Advanced Surface Polishing Techniques
  • Laser-Ablation Synthesis of Nanoparticles
  • Quantum Dots Synthesis And Properties
  • Nanowire Synthesis and Applications
  • Chalcogenide Semiconductor Thin Films
  • Silicon Nanostructures and Photoluminescence
  • Silicon and Solar Cell Technologies
  • Thin-Film Transistor Technologies
  • Nonlinear Optical Materials Research
  • Integrated Circuits and Semiconductor Failure Analysis
  • Diamond and Carbon-based Materials Research
  • Photonic and Optical Devices
  • Copper-based nanomaterials and applications
  • Topological Materials and Phenomena
  • Advanced MEMS and NEMS Technologies
  • Advanced machining processes and optimization
  • Advanced Semiconductor Detectors and Materials
  • Electronic and Structural Properties of Oxides
  • Optical Coatings and Gratings
  • Green IT and Sustainability
  • Perovskite Materials and Applications
  • Luminescence Properties of Advanced Materials
  • solar cell performance optimization
  • Dielectric properties of ceramics

Nagoya Institute of Technology
2024-2025

Japan Synchrotron Radiation Research Institute
2024

SPring-8
2024

National Institute of Advanced Industrial Science and Technology
2018-2020

Energy Institute
2016-2018

Tohoku University
2014-2016

University of Hyderabad
2010-2015

X-ray fluorescence holography (XFH) was, for the first time, applied to a polycrystalline system in order visualize local structures within single grain using an x-ray microbeam. XFH was performed on (Ba,Ca)(Zr,Ti)O3 (BCZT) piezoelectric ceramic as normal mode with two-dimensional detector. After data acquisition and processing, we obtained Zr-Kα hologram from BCZT ceramic. The Kossel lines were clearly observed, which good agreement our simulated results, although there is possibility that...

10.1063/5.0242691 article EN Review of Scientific Instruments 2025-03-01

The fabrication and evaluation of silicon micromechanical resonators using neutral beam etching (NBE) technology is presented. An technique based on a low energy Cl2/F2/O2 introduced for making nano-trench patterns 5 µm-thick silicon. NBE has been investigated to form highly-anisotropic shape. A μm-deep trench pattern having smooth side walls with gap width 230 nm achieved by NBE. Additionally, method proposed. resonant frequency the fabricated devices length 500 μm, 440 μm thickness 9.66...

10.1088/0960-1317/24/8/085005 article EN Journal of Micromechanics and Microengineering 2014-07-04

We describe a multi-diamond-wire saw for cutting monocrystalline silicon bricks into thin (120 µm) and thick (200 wafers label as fresh- worn-wire sides. While almost no difference was found in the fracture stress of cut from either side, showed lower those fresh-wire side compared to side. This is remarkable result when are sawn with conventional diamond wire. On contrary, improved wire (100d-M6/12) higher (100d-M8/16), both Observing subsurface areas by micro-Raman spectroscopy, we...

10.7567/jjap.57.08rb08 article EN Japanese Journal of Applied Physics 2018-06-28

Abstract The photovoltaic effect of the silicon (Si)/silicon carbide (SiC) quantum dot super lattice (QDSL) and multi‐quantum well (QW) strucutres is presented based on numerical simulation experimental studies. QDSL QW structures act as an intermediate layer in a p‐i‐n Si solar cell. consists stack four 4‐nm nano disks 2‐nm SiC barrier layers embedded matrix fabricated with top‐down etching process. were observed bright field‐scanning transmission electron microscopy. results 3D finite...

10.1002/pip.2726 article EN Progress in Photovoltaics Research and Applications 2015-12-16

To reduce silicon kerf loss, we have cut bricks into wafers using a thin diamond wire (the diameter of core wire: 80 µm, the average size abrasives: 10 µm). Damages caused by sawing are responsible to an asymmetry in fracture strength, lower strength parallel bending and higher perpendicular saw marks. elucidate depth subsurface damage, front backside surfaces etched 3, 5, µm 24% KOH aqueous solution. By etching 3 5 enhanced factor 1.96 2.9 times 1.03 1.31 compared bare wafers. Etching more...

10.7567/jjap.57.126501 article EN Japanese Journal of Applied Physics 2018-11-02

Here we are presenting our experimental results on CdS nano powders, heat-treated at different temperatures in air environment. We used spectroscopic studies like XRD, TGA-DTA, FT-IR, Raman, FE-SEM-EDAX, TEM-SAED, and DRS to characterize the powders. From XRD results, conclude that increasing temperature from 200 400 °C or above allows changing cubic hexagonal phase. During heat treatment an environment, oxygen diffuses into crystal lattice inducing oxidation of The chemical groups samples...

10.1021/jp3074943 article EN The Journal of Physical Chemistry C 2013-01-11

A intermediate multidomain state and large crystallographic tilting of 1.78° for the (hh0)pc planes a (001)pc-oriented single-domain Mn-doped BiFeO3 (BFMO) thin film were found when an electric field was applied along [110]pc direction. The anomalous caused by ferroelastic domain switching 109° switching. In addition, occurred via state. To investigate these dynamics under field, we used in situ fluorescent X-ray induced Kossel line pattern measurements with synchrotron radiation. inverse...

10.1038/s41598-024-65215-w article EN cc-by Scientific Reports 2024-06-21

Using a multi-diamond-wire saw, we cut monocrystalline silicon bricks into thin (120 µm) wafers, on which observed saw marks and elongated pits with surface cracks. To address the fracture issues, performed three-line bending tests load applied in parallel perpendicular direction to mark direction. Under loading, accompanying cracks resulted lower strength than under loading wafers were clearly separated two groups: lower-strength from fresh-wire side higher-strength worn-wire side. had less...

10.7567/jjap.57.095501 article EN Japanese Journal of Applied Physics 2018-07-30

Abstract The effect of passivation films on a Si quantum dot superlattice (QDSL) was investigated to generate high photocurrent in solar-cell applications. Three types films, sputter-grown amorphous silicon carbide (a-SiC), hydrogenated a-SiC (a-SiC:H), and atomic-layer-deposited aluminum oxide (ALD-Al 2 O 3 ), were used passivate the QDSLs containing stack four 4 nm nanodisks (NDs) (SiC) fabricated by neutral beam etching (NBE). Because surface-to-volume ratio typically present Si-NDs...

10.7567/jjap.55.032303 article EN Japanese Journal of Applied Physics 2016-02-22

A series of Zn doped cadmium sulfide (CdS:Zn) nanopowders were prepared by a simple co-precipitation method at room temperature mixing the stoichiometric amount reactants in Milli Q water solvent. The composition was accurately adjusted controlling molar ratio Cd, acetate mixed reactants. Spectroscopic studies on as investigated using XRD, Raman, UV-Vis absorption, FE- SEM-EDAX and photoluminescence. Extremely broad reflections XRD peaks powders establish nanometer scale dimensions cubic...

10.1088/1757-899x/73/1/012079 article EN IOP Conference Series Materials Science and Engineering 2015-02-17

Standard lithographic free wet etching process applied to thin (100 μm) p-type 156*156mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> Czochralski (CZ) silicon generate random micro pyramids with variable heights from 2 5 μm, which leads reduce the surface reflection upto 10% by scattering. The present study mainly focus on optimize recipe for maskless damage neutral beam (NBE) drill low aspect ratio nano holes pyramids. This offers a...

10.1109/nano.2016.7751349 article EN 2016-08-01

The local structure of the two-dimensional van der Waals material, Fe5–xGeTe2, which exhibits unique structural/magnetic phase transitions, was investigated by Te K-edge extended X-ray absorption fine (EXAFS) and Kα fluorescence holography (XFH) over a wide temperature range. formation trimer atoms at low temperatures has been fully explored using these methods. An increase in Te–Fe distance approximately 150 K suggested EXAFS presumably indicates trimer. Moreover, XFH displayed clear atomic...

10.1021/acsomega.4c01395 article EN cc-by-nc-nd ACS Omega 2024-05-01

We present the linear and nonlinear optical properties of Bi<sub>12</sub>SiO<sub>20</sub> (BSO) nanocrystals sizes 60-150 nm, synthesized using chemical solution decomposition (CSD) method. BSO nanocrystlas were characterized XRD, UV-Vis absorption, TEM imaging techniques. X-ray powder diffraction indicated that have formed at calcination temperature 700&deg;C. The UV-Visible absorption spectrum showed a distinct peak 270 due to nanocrystals. dispersed in PMMA studied standard open aperture...

10.1117/12.854204 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2010-04-14
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