A5100709053- Particle physics theoretical and experimental studies
- High-Energy Particle Collisions Research
- Quantum Chromodynamics and Particle Interactions
- Particle Detector Development and Performance
- Dark Matter and Cosmic Phenomena
- Computational Physics and Python Applications
- Cosmology and Gravitation Theories
- Neutrino Physics Research
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Astrophysics and Cosmic Phenomena
- Black Holes and Theoretical Physics
- Radiation Detection and Scintillator Technologies
- Semiconductor Quantum Structures and Devices
- Gas Sensing Nanomaterials and Sensors
- Distributed and Parallel Computing Systems
- Particle Accelerators and Free-Electron Lasers
- Atomic and Subatomic Physics Research
- Superconducting Materials and Applications
- Artificial Intelligence in Games
- Spectroscopy and Laser Applications
- Gamma-ray bursts and supernovae
- Nuclear physics research studies
- Noncommutative and Quantum Gravity Theories
- Scientific Computing and Data Management
Unidades Centrales Científico-Técnicas
2011-2025
Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas
2016-2025
Universidad Autónoma de Madrid
1992-2023
University of Debrecen
2023
National Agency for New Technologies, Energy and Sustainable Economic Development
2023
Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro
2023
Universidad Complutense de Madrid
2005-2019
Universidad de Oviedo
2019
University of Bologna
2019
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
2019
A comparative study of the chemical functionalization undoped, n- and p-type GaN layers grown on sapphire substrates by metal−organic vapor deposition was carried out. Both types samples were chemically functionalized with 3-aminopropyltriethoxysilane (APTES) using a well-established silane-based approach for functionalizing hydroxylated surfaces. The untreated surfaces as well those modified hydroxylation APTES analyzed angle-resolved X-ray photoelectron spectroscopy. Strong differences...
InGaN-GaN multiple-quantum-well (MQW)-based photodetectors, with a detection edge at 450 nm and high responsivity, have been fabricated characterized. We show that the performance of MQW-based photodetectors strongly depends on proper device design, i.e., number QWs, barrier blocking layer thickness doping level. Namely, responsivity can be varied in ~ 1 to 100 mA/W range similar structures same QWs. These results support model where photocurrent increase is due improvement collection...
Abstract The High-Luminosity Large Hadron Collider (HL-LHC) has motivated a generalized upgrade in electronic systems across all experiments. In the new electronics architecture for CMS (Compact Muon Solenoid) Drift Tubes detector, trigger generation moves from on-detector ASICs to back-end, be carried out by top-range FPGAs. algorithm aims deliver full-resolution, offline-grade performance reconstruction of muon segments. To achieve this objective, meeting latency and data rate...
Combustion control requires visible photodetectors to sense the CH* CL emission at 430 nm that combined with a visible-blind UV photodetector allows us obtain OH*/CH* ratio. UV-visible P-InGaN/GaN multiple quantum well-N photodiodes 15-18 mm2 areas were fabricated conduct OH* (308 nm) and detection without external filters. Bandpass detectors 230-390 360-450 presented linear responses over five decades rejection ratios >10(3) 308 nm, respectively. A full optical sensor system was built...
Covalent tethering of a Ru(II) dye to gallium nitride surfaces has been accomplished as key step in the development innovative sensing devices which indicator support (semiconductor) plays role both and excitation source. Luminescence emission decays time-resolved spectra confirm presence on semiconductor surfaces, while X-ray photoelectron spectroscopy proves its covalent bonding. The O2 sensitivity new device is comparable those other ruthenium-based sensor systems. This achievement paves...
Two new methods for covalent functionalization of GaN based on plasma activation its surface are presented. Both them allow attachment sulfonated luminescent ruthenium(II) indicator dyes to the p- and n-type semiconductor as well nonencapsulated chips light-emitting diodes (blue LEDs). X-ray photoelectron spectroscopy analysis functionalized confirms formation bonds between dye. Confocal fluorescence microscopy with single-photon-timing (SPT) detection has been used characterization surfaces...
The Compact Muon Solenoid (CMS) experiment prepares its Phase-2 upgrade for the high-luminosity era of LHC operation (HL-LHC). Due to increase occupancy, trigger latency and rates, full electronics CMS Drift Tube (DT) chambers will need be replaced. In new design, time bin digitisation chamber signals around 1~ns, totality forwarded asynchronously service cavern at resolution. backend system in charge building primitives each chamber. These contain information level about muon candidates...
Coeliac disease in children is frequently associated with a slow growth rate. This observation may be linked to the malabsorption that occurs these patients; however, underlying mechanism remains unknown. To better understand this phenomenon, we have studied patterns of 153 patients coeliac for 2-9 years. Gastro-intestinal biopsies were performed before and after gluten exclusion. In second group 79 children, somatostatin levels binding properties plasma jejunal mucosa measured. third 40...
Characterization and analysis of photoresponse in p-n diodes with embedded (In,Ga)N-GaN multiple-quantum-well (MQW) structures are reported. Their dependence on the number wells In composition considered. The influence device structure electric fields active region responsivity has also been studied. Theoretical considerations as well photocapacitance photocurrent measurements show that position quantum (QWs), either quasi-neutral or space charge region, is a critical factor collection...
The fabrication and characterization of metal-semiconductor-metal polarization-sensitive photodetectors based on A-plane GaN grown R-plane sapphire substrates is reported. These take advantage the in-plane crystal anisotropy, which results in linear dichroism near band gap energy. high resistivity material leads to extremely low dark currents. For an optimized finger spacing 1 μm, current density responsivity at 30 V are 0.3 nA/mm2 2 A/W, respectively. A maximum polarization sensitivity...
Group-III nitrides are considered to be a strategic technology for the development of ultraviolet photodetectors due their remarkable properties in terms spectral selectivity, radiation hardness, and noise.The potential advantages these materials were initially obscured by large density intrinsic defects.The advances thus associated general with improvements material quality.Although still also needs improvement, efforts being intensified fabrication advanced structures photodetector...
The increase of luminosity expected by LHC during Phase1 will impose tighter constraints for rate reduction in order to maintain high efficiency the CMS Level1 trigger system. TwinMux system is early layer muon barrel region that concentrates information from different subdetectors: Drift Tubes, Resistive Plate Chambers and Outer Hadron Calorimeter. It arranges slow optical links detector chambers into faster (10 Gbps) are sent multiple copies track finders. Results collision runs, confirm...
Experimental and theoretical investigations for growth of silicon nanoparticles (4 to 14 nm) in radio frequency discharge were carried out. Growth processes performed with gas mixtures SiH4 Ar a plasma chemical reactor at low pressure. A distinctive feature presented kinetic model generation (compared our earlier model) is its ability investigate small “critical” dimensions clusters, determining the rate particle production taking into account influence SiH2 Si2Hm dimer radicals. The...
The Sector Collector relocation is the first stage of upgrade program for Drift Tubes subdetector CMS experiment. It was accomplished during Long Shutdown 2013–2014, and consisted in second-level trigger readout electronics from experimental to service cavern, relieving environmental constraints improving accessibility maintenance upgrade. Extending electrical links would degrade reliability, so information converted optical with a custom system capable dealing DC-unbalanced data. Initially,...
This work reports on the fabrication of Schottky barrier based Mg-doped (In,Ga)N layers for fluorescence applications. Mg acceptors are used in order to compensate surface and bulk donors that prevent contacts unintentionally doped grown by plasma-assisted molecular beam epitaxy (PA-MBE). Rectifying properties exhibited a major improvement when : was used. The electrical optical measurements showed hole concentration up 3 × 10 19 holes cm −3 with acceptor activation energy ∼60 meV....
Today there is a number of automatic systems for developing interactive digital storytelling applications. Each one uses its own architecture, data structure and user interface which make practically impossible to create single universal quantitative metric compare them. While these differences are intrinsic the artistic nature narrative applications, developers underlying technology could be benefited from some evaluation standards systems' functionality, interoperability performance. This...
In order to cope with up two times the nominal LHC luminosity, second level of readout system CMS Drift Tubes (DT) electronics needs be redesigned minimize event processing time and remove present bottlenecks. The μ ROS boards are TCA modules, which include a Xilinx Virtex-7 FPGA equipped 6 12-channel optical receivers 240 Mbps input links. Each board collects information from 72 links (3 DT sectors), requiring total 25 boards. design first validation tests will described.
The CMS drift tubes (DT) muon detector, built for withstanding the LHC expected integrated and instantaneous luminosities, will be used also in High Luminosity (HL-LHC) at a 5 times larger luminosity and, consequently, much higher levels of radiation, reaching about 10 luminosity. Initial irradiation tests spare DT chamber CERN gamma facility (GIF++), large (∼ O(100)) acceleration factor, showed ageing effects resulting degradation cell performance. However, full simulations have shown...
Abstract Noise characteristics of InGaN/GaN multiple‐quantum‐well (MQW) photodiodes (PD) and photoconductors (PC) were studied. 1/ f ‐type noise was examined in MQW PDs as a function reverse bias, In content temperature. Superposed multilevel Random Telegraph Signal observed under forward biases. The dominant presence this type PCs seems to indicate that its origin related localization effects the InGaN QWs. Detectivity determined at various voltages for wide range temperatures. (© 2007...
CMS DT electronics upgrade involves laying down 3500 optical links from the experimental cavern to service cavern, whose lengths must be matched minimize skew, so that present upstream can reused at an initial stage. In order assess cables' compliance, a high resolution and cost-effective system has been developed measure length uniformity of these fibres. Transit-time oscillation method implemented with MTP 12-channel fibre optic transmitter receiver Spartan-6 FPGA. After proper corrections...
The readout server (ROS), which constitutes the second level of CMS drift tubes (DT) subdetector architecture, is a complex VME 9U board, currently placed in cavern, racks on one side detector wheels. planned upgrade DT electronics for 2013-2014 includes relocation all and trigger counting room, allowing among others, future redesign higher performance ROS board based commercial devices with no radiation tolerance requirements.