A5018846997- Radiation Effects in Electronics
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- VLSI and Analog Circuit Testing
- Radiation Detection and Scintillator Technologies
- Dark Matter and Cosmic Phenomena
- Neutrino Physics Research
- Radiation Therapy and Dosimetry
- Distributed systems and fault tolerance
- Particle Detector Development and Performance
- Astrophysics and Cosmic Phenomena
- Spacecraft Design and Technology
- Advanced Memory and Neural Computing
- Advanced Clustering Algorithms Research
- Advanced Data Storage Technologies
- Face and Expression Recognition
- Particle physics theoretical and experimental studies
- Satellite Communication Systems
- Advanced Battery Technologies Research
- Animal Diversity and Health Studies
- Complex Network Analysis Techniques
- Agricultural Science and Fertilization
- Low-power high-performance VLSI design
- Interconnection Networks and Systems
- Advanced Malware Detection Techniques
European Space Research and Technology Centre
2023-2024
National Institute for Subatomic Physics
2022-2024
University of Amsterdam
2023-2024
Devi Ahilya Vishwavidyalaya
2024
Indo Korea Science and Technology
2024
Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier
2015-2018
Institut d'Électronique et des Systèmes
2015-2018
Université de Montpellier
2014-2016
Centre National de la Recherche Scientifique
2014-2016
Radiation damage of J-series silicon photomultipliers (SiPMs) has been studied in the context using these photodetectors future space-borne scintillation detectors. Several SiPM samples were exposed to 101.4 MeV protons, with 1 neutron equivalent fluence ranging from 1.27×108 neq/cm2 1.23×1010 neq/cm2. After irradiation, SiPMs experienced a large increase dark current and noise, which may pose problems for long-running space missions terms power consumption, thermal control detection...
In previous works, we have demonstrated the importance of dynamic mode testing SRAM components under ionizing radiation. Several types failures are difficult to expose when device is tested static (retention) mode. With purpose exploring and defining most complete procedures reveal potential hazardous behaviors devices, present novel methods for radiation SRAMs. The proposed based on different word address accessing schemes data background: Fast Row, Column, Pseudorandom, Adjacent (Gray)...
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various are observed, which generate characteristic error patterns, affecting isolated bits, words, groups pages, sometimes entire regions memory array. underlying mechanisms discussed.
During irradiation testing of RAMs, various failure scenarios may occur which generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.
Calculating single event effect (SEE) rates is essential to ensure space mission reliability. Standard methods rely on ground data, which not fully representative of the radiation environment. In this article, we evaluate these using SEE data collected during 5.5 years from upset (SEU) and latch-up (SEL) monitors aboard Alphasat spacecraft in geostationary orbit.
This work investigates the flight behavior of Static Random-Access Memories (SRAMs) on board PROBA-V satellite. During mission, unexpected error rates were observed for redundant modules that used Commercial Off-The-Shelf (COTS) SRAMs. After undergoing an initial assessment, it was inferred these errors caused by Single-Event Latch-ups (SELs). result led to a broader study Effects (SEEs) in SRAM devices and their impact operation. Therefore, we proposed experimental approach evaluating...
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. influence dynamic and static test modes as well several stimuli the error rate this memory investigated. Static results show that prone to temporary effects occurring in peripheral circuitry, with a possible effect due fluence. Dynamic tests high sensitivity switching activity circuitry.
This article reviews state-of-the-art techniques for the evaluation of effect radiation on static random access memory (SRAM). We detailed irradiation test and results from experiments with several types particles. Two commercial SRAMs, in 90 65 nm technology nodes, were considered as case studies. Besides basic dynamic modes, advanced stimuli tests introduced, well statistical post-processing allowing deeper analysis correlations between bit-flip cross-sections design/architectural...
This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration cocktails at the HIF (Belgium) RADEF (Finland) as well low energy protons RADEF. The SEU cross-section showed an unusual profile peak lowest LET (heavy-ion highest range). discrepancy is due to fact that constituted two vertically dice. impact testing on response both dice presented. are discussed cross-sections upper lower layers...
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. influence different test modes (static and dynamic) this memory investigated. Static results show that the prone to temporary effects occurring in peripheral circuitry. Dynamic tests a high sensitivity heavy-ions.
Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation using these methodologies is to obtain precise information on the intrinsic defects and weaknesses tested devices, gain insight their failure mechanisms, at no additional cost. case study a 65 nm SRAM irradiated with neutrons, protons heavy ions. This publication an extended version previous [1].
Monitoring radiative environments is of great importance, especially for facilities hosting large particle accelerators and nuclear power plants. Such make use monitoring systems that are usually composed different sensors to evaluate the intensity ambient radiation field in locations. In this paper, we propose an SRAM-based monitor works dynamic mode (memory continuously accessed), according data gathered by irradiating our sensor several accelerator facilities. The operation allows...
A systematic account of the grasses Bari-Bareli Range is given as area likely to be submerged on proposed dam Barna river.
Space applications frequently use flash memories for mass storage data. However, the technology applied in memory array and peripheral circuity are not inherently radiation tolerant. This work introduces results of test campaigns with heavy ions protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets raw error cross sections were presented, as well an evaluation occurrences events. Characterization effects embedded data registers was also performed.
Consensus clustering, also known as clustering ensembles is a technique that combines multiple solutions to obtain stable, accurate and novel results. Over the last years several consensus approaches were proposed addressing practical problems with different degrees of success. In this paper, we consider data fragments elements cluster ensemble framework. We propose new dissimilarity measure on build function allows handling large scale while not compromising accuracy. evaluate our number...
A methodology is proposed for the statistical analysis of memory radiation test data, with aim identifying trends in single-even upset (SEU) distribution. The treated case study a 65nm SRAM irradiated neutrons, protons and heavy-ions.
The increase of lower class satellite missions and the reduction space launch costs need for performant affordable electronics with a short lead time. This leads to increasing demand Commercial Off-The-Shelf (COTS) component usage in Space. Especially selection DC-DC buck converters is highly important considering their sensitivity Destructive Single Event Effects which can loss regulated load or even on power bus. In this paper, multiple modern COTS converter ICs integrated MOSEFTs are...