A5074337767- Chalcogenide Semiconductor Thin Films
- Crystal Structures and Properties
- Nonlinear Optical Materials Research
- Solid State Laser Technologies
- Solid-state spectroscopy and crystallography
- Photorefractive and Nonlinear Optics
- Quantum Dots Synthesis And Properties
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Electrospun Nanofibers in Biomedical Applications
- Nanoplatforms for cancer theranostics
- Electrocatalysts for Energy Conversion
- Phase-change materials and chalcogenides
- 2D Materials and Applications
- Electrochemical Analysis and Applications
- Mineralogy and Gemology Studies
- Hydrogen's biological and therapeutic effects
- Luminescence Properties of Advanced Materials
- Advanced Nanomaterials in Catalysis
- Graphene research and applications
- GNSS positioning and interference
- Corneal Surgery and Treatments
- Advanced Thermoelectric Materials and Devices
- High-pressure geophysics and materials
- Laser-Matter Interactions and Applications
Anhui Institute of Optics and Fine Mechanics
2015-2025
Chinese Academy of Sciences
2015-2025
Hefei Institutes of Physical Science
2018-2025
Dahua Technology (China)
2025
Weifang Medical University
2023
Hefei University of Technology
2022
Hefei University
2017
The advent of enzyme-facilitated cascade events in which endogenous substrates within the human body are used to generate reactive oxygen species (ROS) has spawned novel cancer treatment possibilities. In this study, a supramolecular catalytic nanozyme system was successfully developed, exhibiting photothermal-enhanced multienzyme and glutathione (GSH) depletion activities ultimately triggering apoptosis-ferroptosis synergistic tumor therapy. fabricated using β-cyclodextrin-functionalized...
High quality nonlinear infrared crystal material GaSe was grown using a seed aided Bridgman–Stockbarger method having size of 24–26 mm in diameter and 55–70 length. The crystals were characterized X-ray diffraction, electron energy scattering, transmission spectrophotometry microscopy. spectrum showed that the is about 67% an 8 thick sample cleaved along (001) face, mean absorption 0.01–0.08 cm−1 range 0.9–15 μm. It may be suitable for fabrication optical devices, photoelectric analyzers...
High-quality LiTbF4 crystals were successfully grown for the first time using Bridgman method with a platinum (Pt) crucible vacuum-sealed technique. Using laser sealing technique, raw materials sealed directly in Pt under high-vacuum conditions to control composition and purity of melt. A single-crystal rod dimensions Φ12 mm × 80 was this method, several samples prepared characterize optical properties. The as-grown crystal exhibited narrow full width at half-maximum (fwhm) 0.038° on (112)...
The growing threat of bacterial infections poses a critical challenge to public health, underscoring the urgent need for innovative antibacterial agents and therapeutic strategies. In response, we have developed multifunctional nanoplatform based on palladium-hydride metal-organic frameworks (P(H)ZPAg) synergistic hydrogen photothermal therapy. This integrates palladium hydride (PdH) encapsulated within zeolitic imidazolate framework (ZIF-8), surface modification with polydopamine (PDA), in...
Graphene-like hexagonal boron phosphide with its moderate band gap and high carrier mobility is considered to be a potential material for electronics optoelectronics. In this work, the tight-binding Hamiltonian of monolayer bilayer two stacking orders are derived in detail. Including up fifth-nearest-neighbor plane next-nearest-neighbor interlayer hoppings, approximated structure can well reproduce first-principle calculations based on screened Heyd-Scuseria-Ernzerhof hybrid functional level...
Two-dimensional hexagonal boron phosphide presents great potential in applications of electronics and optoelectronics due to its high carrier mobility moderate band gap. In this work, we investigate the effect stress electric field on electronic properties layers based first-principles calculations. We find that both gap effective masses monolayer gradually increase with from compression tension. As for bilayer two stacking orders (AB_B-P AB_B-B) upon applied field, monotonously increases...
We investigated the decomposition conditions of CdSe crystal with aid thermodynamics analysis. chose optimized growth parameters (1 MPa, 1250°C) based on numerical simulation, and obtained single boule 28 mm in diameter 70 length. Preliminary tests showed that had fine homogeneity composition (CdSe0.975), high infrared transmission (68-70%, 2.0-16 µm) large laser induced damage threshold value (LIDT, 56 MW/cm2). This may be a good candidate for 8-12 µm mid-far nonlinear optical (NLO) material.
Φ 40 × 100 mm 3 CdSe crystal was obtained using a capsuled Mo-crucible method combined with seed directional technique.
A combination of experimental and computational methods was performed to investigate the defect optical properties S-doped Al-doped GaSe crystals.
A Dy3+-doped PbGa2S4 crystal with low phonon energy has been proved to be able achieve the direct lasing of a mid-infrared laser. The single-crystal growth Dy3+:PbGa2S4 was investigated in this work. On basic high-purity polycrystalline material synthesized using pressure-assisted method, single φ 21 × 50 mm3 successfully grown Bridgman method crucible–capsule technique. To understand cleavage character and get further insight into its electronic properties, electronic, phonon, mechanical...
Owing to the large x-ray attenuation coefficient, appropriate bandgap, high resistivity, and mobility-lifetime (μτ) product, binary II–VI semiconductor CdSe is a promising detection material it has exhibited excellent at room temperature (RT). For further improving characteristics of detectors, electrical properties single crystals (SCs) grown through pressure-assisted vertical Bridgman method their performance have been investigated RT liquid nitrogen (LNT), respectively. The significantly...
Recently developed chalcogenides nonlinear optical crystals have potential application in mid- to far-infrared laser fields. However, high-quality single are hard be prepared because of high vapor pressure sulfur component and decomposition during the polycrystalline synthesis single-crystal growth. A pressure-assisted technique was performed prepare stoichiometric AgGaS2 AgGaGeS4 materials. On basis synthesized materials, were successfully obtained using seed directional Bridgman method...
The structural, electronic, mechanical properties, and frequency-dependent refractive indexes of GaSe1–x S x (x = 0, 0.25, 1) are studied by using the first-principles pseudopotential method within density functional theory. calculated results demonstrate relationships between intralayer structure elastic modulus in 1). Doping e-GaSe with strengthens Ga–X bonds increases its moduli C 11 66. Born effective charge analysis provides an explanation for modification cleavage properties about...
Electronic structure, optical dispersion and luminescence properties of terbium gallium garnet (Tb 3 Ga 5 O 12 , TGG) were investigated.