Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, sensitivity, and low proximity effect demonstrated hydrogen silsesquioxane resist.

A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of (CH3)3Pt(CPCH3) precursor gas. The diameter was about 1 nm. observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in ion-beam-induced deposition. Pillars grown at low currents are narrow and have sharp tips. For constant dose, pillar height decreases with increasing current, pointing depletion molecules impact site....

The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication nanostructures thanks to its sub-nanometer sized probe. unique interaction the ions with sample material provides very localized secondary electron emission, thus providing a valuable signal for high-resolution as well mechanism precise nanofabrication. low proximity effects, due yield backscattered confinement forward scattered into narrow cone, enable patterning ultra-dense sub-10 nm structures. This...

Helium ion microscopy is now a demonstrated practical technology that possesses the resolution and beam currents necessary to perform nanofabrication tasks, such as circuit edit applications. Due helium’s electrical properties sample interaction characteristics relative gallium, it likely deposition of induced deposited films will be different than those produced using gallium focused technology. However, there at this date very little literature discussing use helium beams for chemistry or...

Summary Although helium ion microscopy ( HIM ) was introduced only a few years ago, many new application fields are emerging. The connecting factor between these novel applications is the unique interaction of primary beam with sample material at and just below its surface. In particular, secondary electron signal stems from an area that extremely well localized around point incidence beam. This makes suited for both high‐resolution imaging nanofabrication. Another advantage in...

An analytical model for the growth of nanopillars by helium ion-beam-induced deposition is presented and compared to experimental data. This describes competition between pillar in vertical lateral directions. It assumes that induced incident primary ions type-1 secondary electrons, whereas scattered type-2 ions. essential element notion depletion adsorbed precursor molecules occurs only at pillars’ apex. Depletion impedes apex, allowing more time outgrowth pillar’s sidewalls. The...

In this paper we studied helium ion beam induced deposition (HIBID) of Pt on a silicon wafer using the recently commercialized microscope (HIM) at 25 kV and low currents. The motivation work was to understand impact light, inert ions rate structure purity, with some implications usefulness HIM nano-machining for circuit modification. Two Pt-rich deposits sub-micron dimensions were grown HIBID different pillar substrate bright dark field TEM images. authors analyzed metal purity profile...

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Paul F. A. Alkemade, Hozanna Miro, Emile van Veldhoven, Diederik J. Maas, Daryl Smith, Philip D. Rack; Pulsed helium ion beam induced deposition: A means to high growth rates. Journal of Vacuum Science Technology B 1 November 2011; 29 (6): 06FG05. https://doi.org/10.1116/1.3656347 Download citation file: Ris...

The determination of the quality an imaging system is not easy task for, in general, at least three parameters, strictly interdependent, concur defining it: resolution, contrast, and signal-to-noise ratio. definition resolution itself scanning microscopy elusive case ion complicated by damage sample under beam, which, especially for small features, can be limiting factor. This indeed most focused beam systems, which exploit beams Ga+. only way to overcome this limit sources low mass ions,...

For the introduction of EUV lithography, development high performance resists is key importance. This involves studies into resist sensitivity, resolving power and pattern uniformity. We have used a sub-nanometer-sized 30 keV helium ion beam to expose chemically amplified (CAR) resists. There are similarities in response He⁺ ions photons: both excite Secondary Electrons with similar energy distributions.The weak backscattering results ultra-low proximity effects. fact enables...

The authors report the direct-write growth of hammerhead atomic force microscope (AFM) probes by He+ beam induced deposition platinum-carbon. In order to grow a thin nanoneedle on top conventional AFM probe, move focused during exposure PtC precursor gas. final stage, perpendicular movement results in required three-dimensional (hammerhead) shape. diameter needle depends ion dose, dwell time, and speed movement. A radius below 10 nm smaller than 35 have been achieved. This fabrication...

Charged particle microscopes have been used extensively for the creation of nanostructures. As a subset techniques this, process beam-induced chemistry offers almost endless flexibility both additive (by beam-driven precursor deposition) and subtractive beam-catalyzed etching) processing. A recent review article makes it evident simply by its massive page count number materials that to deposit variety conductive, insulating, magnetic, photonic, other structures. To take advantage these...

Computer-integrated flexible manufacturing systems are designed to respond quickly and economically varying production requirements. Since an essential ingredient of all operations is fixturing, if these modern be truly flexible, then the fixturing must adaptable also. Traditional design philosophies focused on dedicated fixtures clearly inadequate for applications. This paper reports innovative class based particulate fluidized beds. mode exploits ability devices change from a solid phase...

This paper presents a heuristic model for scanning helium ion beam lithography (SHIBL) in EUV chemically amplified resist. The employs point-spread function to account all physical and chemical phenomena involved the resist activation. Ion shot noise effects are accounted using Poisson statistics. Our shows good agreement with earlier single-pixel SHIBL experiments determining line width as of dose desired line-and-space pattern. Furthermore, we propose optimized-pixel-dose improve exposure...

With lithographic patterning dimensions decreasing well below 50 nm, it is of high importance to understand metrology at such small scales. This paper presents results obtained from dense arrays contact holes (CHs) with various Critical Dimension (CD) between 15 and as patterned in a chemically amplified resist using an ASML EUV scanner measured TNO. To determine the differences (local) CD techniques, we conducted experiment optical scatterometry, CD-Scanning Electron Microscopy (CD-SEM),...

Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can activation of modern complex resist components be accurately measured at sufficient spatial resolution? No exposed nanometre-scale pattern sufficiently sturdy to unalteredly withstand inspection by intense photon or electron beams, not even after processing development. This paper presents experimental proof that infrared atomic force microscopy...

TNO has developed the Rapid Nano scanner to detect nanoparticles on EUVL mask blanks. This was designed be used in particle qualifications of EUV reticle handling equipment. In this paper we present an end-to-end model detection process. All important design parameters concerning illumination, and noise are included model. The prediction from matches performance that experimentally determined (59 nm LSE). will predict future generations scanners.