- Magnetic and transport properties of perovskites and related materials
- Magnetic properties of thin films
- Multiferroics and related materials
- Advanced Condensed Matter Physics
- Quantum and electron transport phenomena
- Physics of Superconductivity and Magnetism
- Ferroelectric and Piezoelectric Materials
- Theoretical and Computational Physics
- ZnO doping and properties
- Magnetic Properties and Applications
- Electronic and Structural Properties of Oxides
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Magneto-Optical Properties and Applications
- Magnetic Properties and Synthesis of Ferrites
- Semiconductor materials and devices
- Acoustic Wave Resonator Technologies
- Characterization and Applications of Magnetic Nanoparticles
- Copper-based nanomaterials and applications
- Magnetic Properties of Alloys
- Semiconductor Quantum Structures and Devices
- Rare-earth and actinide compounds
- Dielectric properties of ceramics
- Advancements in Battery Materials
- Advancements in Semiconductor Devices and Circuit Design
Nagoya University
2018-2024
Pohang University of Science and Technology
2022
Bridge University
2022
Korea Institute of Science and Technology
2022
Sungkyunkwan University
2022
Korea Advanced Institute of Science and Technology
2022
Tohoku University
2022
Tokyo Institute of Technology
2012-2021
Spintronics Research Network of Japan
2021
Osaka University
2016-2021
Polarization measurements reveal that AgNbO3 has an extremely large polarization, which can reach a value of 52μC∕cm2 in polycrystals. Experiments also show the internal atom distortion is strongly coupled to electric field, indicating high piezoelectric performance be realized system. This finding opens way designing new class lead-free, high-performance materials based on AgNbO3.
A crucial requirement for quantum information processing is the realization of multiple-qubit gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting single rotations and inter-dot exchange in a double dot. partially entangled output state obtained by application to initial, uncorrelated state. We find that degree entanglement controllable operation time. The approach represents key step towards universal multiple qubit
We report clear evidence of the ferromagnetism gas-evaporated Pd fine particles with a clean surface. The particle is found to have magnetic heterostructure: surface ferromagnetic and rest paramagnetic. size dependence saturation component reveals that ordering occurs only on (100) facets topmost two five layers from contribute moment (0.75+/-0.31)micro(B)/atom.
We have studied the effect of sodium on electrical properties Cu2ZnSnS4 (CZTS) single crystal by using temperature dependence Hall measurement. The substitution cation site in CZTS is observed from increasing unit-cell size powder X-ray diffraction. Sodium increases effective hole concentration and makes thermal activation energy smaller. degree compensation decreases with incorporation, thus mobility enhanced. revealed that important dopant to control properties.
By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating by electric fields. Integrating heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an field is required to switch magnetic element. New concepts storage processing information thus can be envisioned when electric-field control viable alternative traditional...
B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation N\'eel order via AF-F transition and recent experimental observation anisotropic magnetoresistance antiferromagnetic proven that is a promising candidate for memory material. In this work, we demonstrate sequential write read operations resistors made B2-orderd thin films by magnetic field electric current only. Our demonstration writing reading...
We report on observation of 4d ferromagnetic ordering in pure Pd fine particles. Results our dc magnetic measurements as a function particle size show that the magnetization increases rapidly with decreasing size; sample 59 Å median radius at 1.8 K under 4 kOe shows factor nineteen larger than bulk. suggest only surface monolayers particles are magnetic. The moment we deduced based this assumption is 0.23 ± 0.19μB per atom which comparable to value predicted by ab initio calculation.
We report the observation of room temperature ferromagnetism in high quality, single crystalline dilute Fe-doped $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}$. The large equilibrium solubility Fe ions matrix refutes uncertainties about secondary phase magnetism, which has often eclipsed this interesting field research. While is observed at and above 5% concentrations, one finds a highly concave dependence susceptibility. Using detailed ab initio calculation, been related to intrinsic magnetic...
For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control properties Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning Mn composition x. Interestingly, obtain L2(1)-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature epilayers x approximately 0.6 exceeds 300 K. Theoretical calculations indicate that electronic alloys become half-metallic 0.75 < or = 1.5. We discuss...
The manipulation of magnetism at Fe/BaTiO3 interfaces is demonstrated via lattice distortion induced by thermal and electrical means. We find that the magnetic coercivity shows similar electric field dependence for positive negative fields in tetragonal phase BaTiO3, whereas those orthorhombic rhombohedral phases vary asymmetrically with respect to polarity. temperature dependent magnetization also reveals effect has its origin strong magnetoelastic coupling interface. underlying mechanisms...
Control of magnetic domain-wall motion by electric fields has recently attracted scientific attention because its potential for logic and memory devices. Here, we report on a new driving mechanism that allows in an applied field without the concurrent use or spin-polarized current. The is based elastic coupling between ferroelectric domain walls multiferroic heterostructures. Pure electric-field-driven demonstrated epitaxial Fe films BaTiO3 with in-plane out-of-plane polarized domains. In...
Perpendicularly magnetized layers are used widely for high-density information storage in magnetic hard disk drives and nonvolatile random access memories. Writing erasing of these devices is implemented by magnetization switching local fields or via intense pulses electric current. Improvements energy efficiency could be obtained when the reorientation perpendicular controlled an field. Here, we report on reversible electric-field-driven out-of-plane to in-plane Cu/Ni multilayers...
Nanodot BaTiO3 supported LiCoO2 cathode thin films can dramatically improve high-rate chargeability and cyclability. The prepared nanodot is <3 nm in height 35 diameter, its coverage <5%. Supported by high dielectric constant materials on the surface of materials, Li ion (Li+) intercalate through robust paths around triple-phase interface consisting dielectric, cathode, electrolyte. current concentration observed finite element method good agreement with experimental data. interfacial...
Abstract Magnetoelectric coupling in multiferroic heterostructures offers a promising platform for electric‐field control of magnonic devices based on low‐power spin‐wave transport. Here, manipulation the amplitude and phase propagating spin waves ferromagnetic Fe film top ferroelectric BaTiO 3 substrate is demonstrated experimentally. Electric‐field effects this composite material system are mediated by strain between alternating stripe domains with in‐plane perpendicular polarization fully...
We report a clear manifestation of the negative magnetoresistance due to domain wall Co submicron zigzag wires in which structures are artificially controllable by changing orientation magnetic fields. The resistivity remanent state discontinuously drops when configuration switches from single multidomain. attribute this wall, and deduce decrease $\ensuremath{-}1.8\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}\ensuremath{\Omega}\mathrm{cm}$ assuming thickness 15 nm. origin...
High field magnetization and ESR measurements on the quasi-one-dimensional (1D) antiferromagnet ${\mathrm{BaCo}}_{2}{\mathrm{V}}_{2}{\mathrm{O}}_{8}$ have been performed in magnetic fields up to 50 T along chain. The experimental results are explained well terms of a 1D $S=1/2$ antiferromagnetic $XXZ$ model longitudinal fields. We show that quantum phase transition from N\'eel ordered spin liquid one is responsible for peculiar order disorder ${\mathrm{BaCo}}_{2}{\mathrm{V}}_{2}{\mathrm{O}}_{8}$.
We report on the magnetic properties of B2-type ordered FeRh epitaxial thin films deposited MgO(001) substarates as a function film thickness. All show clear phase transition from antiferromagnetic state to ferromagnetic with increasing temperature while 10-nm-thick decreases down 300K. The also shows large magnetization even in compared other thicker films. These data indicate that is becoming more stable than decreasing Such thickness dependent are qualitatively compatible theoretical...
High-field specific heat measurements on BaCo(2)V(2)O(8), which is a good realization of an S=1/2 quasi-one-dimensional (1D) Ising-like antifferomagnet, have been performed in magnetic fields up to 12 T along the chain and at temperature down 200 mK. We found new ordered state field-induced phase above H(c) approximately 3.9 T. suggest that novel type incommensurate order, caused by quantum effect inherent quasi-1D antiferromagnet, appears phase.
Local probing of conduction behaviors using atomic force microscopy clearly shows that the grain boundary polycrystalline CaCu3Ti4O12 is semiconducting. In contrast, a mixture semiconducting and insulating regions. This inhomogeneous conductive feature leads to giant dielectric response in CaCu3Ti4O12. Theoretical analysis demonstrates follows typical Debye-type relaxation, its unusual temperature dependence originates from thermal activation behavior free carries within regions grain. An...
Temperature dependent Hall effect measurements from 20 to 300 K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. center level of acceptor band is 132 meV above valence maximum width 40 meV. A correlation between energy concentration in CZTS observed.
We demonstrate elastically induced ferromagnetic to antiferromagnetic phase transition of Ga-substituted FeRh thin films on BaTiO3(001). It is found that two abrupt changes magnetization occur at the successive transitions from tetragonal orthorhombic and rhombohedral phases BaTiO3. Magnetization magnetoresistance together clearly reveal a due compressive lattice strain accompanied by structural transition, while causes change in symmetry magnetic anisotropy FeRh.
Laser-induced ultrafast demagnetization is an important phenomenon that probes arguably ultimate limits of the angular momentum dynamics in solid. Unfortunately, many aspects remain unclear except transfers eventually to lattice. In particular, roles electron-carried spin current are debated. Here we experimentally probe opposite phenomenon, i.e., laser-induced magnetization FeRh, where laser pump pulse initiates build-up rather than its dissipation. Using time-resolved magneto-optical Kerr...