A5101825149- Semiconductor materials and devices
- Catalytic Processes in Materials Science
- Electronic and Structural Properties of Oxides
- Electrocatalysts for Energy Conversion
- Advanced battery technologies research
- Copper Interconnects and Reliability
- Graphene research and applications
- Advanced Memory and Neural Computing
- Advanced Photocatalysis Techniques
- Carbon Nanotubes in Composites
- MXene and MAX Phase Materials
- Fuel Cells and Related Materials
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- Advancements in Solid Oxide Fuel Cells
- Advanced Battery Technologies Research
- Copper-based nanomaterials and applications
- Boron and Carbon Nanomaterials Research
- ZnO doping and properties
- 2D Materials and Applications
- Advancements in Battery Materials
- Hydrogen Storage and Materials
- Nanocluster Synthesis and Applications
- Ammonia Synthesis and Nitrogen Reduction
- Synthesis and properties of polymers
Peking University
2006-2024
Chinese Institute for Brain Research
2024
Peking University Shenzhen Hospital
2017-2023
Tiangong University
2022
Xiangtan University
2006-2021
Ningbo Institute of Industrial Technology
2021
Chinese Academy of Sciences
2021
Tianjin University
2020-2021
State Key Laboratory of Chemical Engineering
2020
Beijing Institute of Graphic Communication
2015-2018
Abstract Developing cost effective electrocatalysts with high oxygen evolution reaction (OER) activity is essential for large‐scale application of many electrochemical energy systems. Although the impacts either lattice strain or defects on OER performance oxide catalysts have been extensively investigated, effects both factors are normally treated separately. In this work, coupled and deficiency electrocatalytic La 0.7 Sr 0.3 CoO 3−δ (LSC) thin films grown single crystal substrates (LaAlO3...
ALD-synthesized Co<sub>9</sub>S<sub>8</sub>/CNT shows superior bifunctional electrocatalytic performance toward OER and ORR, therefore it is an excellent oxygen electrocatalyst for rechargeable Zn–air batteries.
Abstract Atomic layer deposition (ALD) of the pyrite‐type metal disulfides FeS 2 , CoS and NiS is reported for first time. The processes use iron, cobalt, nickel amidinate compounds as corresponding precursors H S plasma sulfur source. All are demonstrated to follow ideal self‐limiting ALD growth behavior produce fairly pure, smooth, well‐crystallized, stoichiometric pyrite films. By these processes, films can also be uniformly conformally deposited into deep narrow trenches with aspect...
We report a new ALD process for Ni<sub>3</sub>C and explore its applications supercapacitors electrocatalytic H<sub>2</sub> evolution.
Electrode materials with high activity and good stability are essential for commercialization of energy conversion systems such as solid oxide fuel cells or electrolysis at the intermediate temperature. Modifying existing perovskite-based electrode surface to form a heterostructure has been widely applied rational design novel electrodes performance. Despite many successful developments in enhancing performance by modification, some controversial results also reported literature mechanisms...
Nitrogen deficient and protonated g-C<sub>3</sub>N<sub>4</sub> was fabricated by the conjoint protocol utilizing NH<sub>4</sub>Cl as gas template H<sub>3</sub>PO<sub>2</sub> doping agent, leading to enhanced visible-light harvesting charge carrier separation achieve efficient H<sub>2</sub> evolution.
Agglomeration is a critical issue for depositing copper (Cu) thin films, and therefore, the deposition should be preferably performed below 100 °C. This work explores an atomic layer (ALD) process films deposited at temperature as low 50 The employs copper(I)-N,N′-diisopropylacetamidinate precursor H2 plasma, which are both highly reactive temperature. °C follows ideal self-limiting ALD fashion with saturated growth rate of 0.071 nm/cycle. Benefitting from temperature, agglomeration Cu...
A rational bottom-up engineering strategy for efficient electrocatalysts based on atomic layer deposition (ALD) is reported. The involves compositional optimization of surface catalyst material by ALD high specific activity and geometric electrode structure area. two optimizations are decoupled herein, because the conformal ensures that coating does not depend substrate geometry. To demonstrate this strategy, we choose ternary FexCo1–xSy compound as electrochemical hydrogen evolution...
A non-precious, self-supportive FeS<italic>x</italic> NRR electrocatalyst was synthesized by a simple H<sub>2</sub>S-plasma treatment on low-cost Fe foam, which shows remarkable NH<sub>3</sub> production rate of 4.13 × 10<sup>−10</sup> mol s<sup>−1</sup> cm<sup>−2</sup> and high faradaic efficiency 17.6%.
Abstract Most contemporary X‐ray detectors adopt device structures with non/low‐gain energy conversion, such that a fairly thick photoconductor or scintillator is required to generate sufficient X‐ray‐induced charges, and thus numerous merits for thin devices, as mechanical flexibility high spatial resolution, have be compromised. This dilemma overcome by adopting new high‐gain concept of heterojunction phototransistor. In contrast conventional detectors, phototransistors allow both...
Abstract The atomic layer deposition (ALD) of iron sulfide (FeS x ) is reported for the first time. process employs bis( N , N′ ‐di‐tert‐butylacetamidinato)iron(II) and H 2 S as reactants produces fairly pure, smooth, well‐crystallized FeS thin films following an ideal self‐limiting ALD growth behavior. can be uniformly conformally deposited into deep narrow trenches with aspect ratios high 10:1, which highlights broad applicability this engineering surface complex 3D nanostructures in...
Atomic layer deposition (ALD) of metal sulfides has aroused tremendous interest recently for its promising applications in many varieties areas. However, most the sulfide ALD processes have to use highly toxic, explosive, and corrosive H2S as sulfur precursor, which leads serious concerns large-scale applications. To circumvent this issue, we herein report an organosulfur precursor di-tert-butyl disulfide (TBDS) replace sulfides. The new process using TBDS with amidinate-type nickel is...
Atomic layer deposition (ALD) of the iron-group transition-metal diselenides FeSe2, CoSe2, and NiSe2 is reported for first time. The ALD processes employ associated metal amidinates as precursors diethyldiselenide (DEDSe) selenium precursor, together with Ar/H2 plasma DEDSe activation. All are able to grow highly pure, smooth, crystalline MSe2 (M = Fe, Co, Ni) films ideal layer-by-layer film growth behavior, which highlights good controllability over quality fabrication process benefited...
In this study, an antidroplet flame retardant system based on FRPET (phosphorus-containing copolyester) is constructed with DOPO-POSS (polyhedral oligomeric silsesquioxane containing DOPO) as additive retardant. It demonstrated that has good dispersibility at a lower amount. When the amount of 9 wt %, residual char DOPO-POSS/FRPET 700 °C increases to 23.56 from 18.16% FRPET, and maximum thermal weight loss rate also reduces. What more limiting oxygen index 33 26% FRPET. The burning time...
Abstract
The commercial application of LiMn xFe1- xPO4 materials has always been a great challenge because their unsatisfactory structure stability during cycling and the safety issue. Herein, single-particle (SP) electrodes, where aggregated is dispersed into SPs so they can distribute homogeneously in carbon-nanotube networks, have prepared characterized to probe degradation mechanism for first time. Compared with conventionally cathode, SP cathode shows prominent capacity-fading cycle numbers,...
A new atomic layer deposition (ALD) process for depositing nickel carbide (Ni3C x) thin films is reported, using bis( N, N'-di- tert-butylacetamidinato)nickel(II) and H2 plasma. The shows a good layer-by-layer film growth behavior with saturated rate of 0.039 nm/cycle fairly wide temperature window from 75 to 250 °C. Comprehensive material characterizations are performed on the Ni3C x deposited at 95 °C various plasma pulse lengths 5 12 s, no appreciable difference found change length. pure,...
Ultrathin atomic-layer-deposited (ALD) vanadium oxide (VOx) interlayer has recently been demonstrated for remarkably reducing the contact resistance in organic electronic devices (Adv. Funct. Mater. 2016, 26, 4456). Herein, we present an situ photoelectron spectroscopy investigation (including X-ray and ultraviolet spectroscopies) of ALD VOx grown on pentacene to understand role improved resistance. The characterizations allow us monitor growth process trace evolutions work function, HOMO...
Abstract With the rapid development of performance and long‐term stability, bismuth vanadate (BiVO 4 ) has emerged as preferred photoanode in photoelectrochemical tandem devices. Although state‐of‐the‐art BiVO photoanodes realize a saturated photocurrent density approaching theoretical maximum, fill factor (FF) is still inferior, pulling down half‐cell applied bias photon‐to‐current efficiency (HC‐ABPE). Among major fundamental limitations are Fermi level pinning sluggish surface kinetics at...
Atomic-layer deposition (ALD) of metal-sulfide thin films has recently been developing very fast, and many new ALD processes have emerged during the past several years. Surface chemistry plays a key role in ALD, but it remains yet to be investigated for developed sulfide processes. We herein report our study on surface nickel from bis(N,N′-di-tert-butylacetamidinato)nickel(II) H2S, using situ characterization techniques X-ray photoelectron spectroscopy, low-energy ion scattering, quartz...
Abstract Late 3d transition metal disulfides (MS 2 , M=Fe, Co, Ni, Cu, Zn) can crystallize in an interesting cubic‐pyrite structure, which all the cations are a low‐spin electronic configuration with progressive increase of e g electrons for M=Fe–Zn. These pyrite compounds exhibit very diverse and intriguing electrical magnetic properties, have stimulated considerable attention various applications, especially cutting‐edge energy conversion storage technologies. The synthesis pyrites is...
Atomic layer deposition (ALD) of cobalt carbide thin films is reported by using bis(N,N′-diisopropylacetamidinato)cobalt(II) (Co(amd)2) and H2 plasma. The process shows a good self-limiting ALD film growth behavior for fairly wide temperature range from 70 to 160 °C, the rate 0.066 nm/cycle within range. deposited are generally smooth pure, composition approximately Co3C0.7 at 80–200 °C. Notably, all carbon in as-deposited forms carbide, no carbon–carbon bonds detected X-ray photoelectron...