Simon Tam

ORCID: 0000-0003-3918-7100
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About
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Research Areas
  • Semiconductor materials and devices
  • Low-power high-performance VLSI design
  • Quantum, superfluid, helium dynamics
  • Advancements in Semiconductor Devices and Circuit Design
  • Parallel Computing and Optimization Techniques
  • Advanced Chemical Physics Studies
  • VLSI and Analog Circuit Testing
  • Muscle activation and electromyography studies
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced Sensor and Energy Harvesting Materials
  • Embedded Systems Design Techniques
  • Atomic and Subatomic Physics Research
  • Advancements in PLL and VCO Technologies
  • Spectroscopy and Quantum Chemical Studies
  • Neuroscience and Neural Engineering
  • Neural Networks and Applications
  • Molecular Spectroscopy and Structure
  • Spacecraft and Cryogenic Technologies
  • Hand Gesture Recognition Systems
  • Electrostatic Discharge in Electronics
  • Advanced Memory and Neural Computing
  • Silicon Carbide Semiconductor Technologies
  • Hydrogen Storage and Materials
  • Advanced Data Storage Technologies
  • Cold Atom Physics and Bose-Einstein Condensates

Université Laval
2018-2024

Université du Québec à Montréal
2019

Intel (United States)
2005-2018

Mission College
2000-2009

Epson (United States)
2008

United States Air Force Research Laboratory
1999-2003

University of Virginia
2003

Edwards Air Force Base
1993-2002

Novel (United States)
2002

Texas Instruments (United States)
1997

The lucky-electron concept is successfully applied to the modeling of channel hot-electron injection in n-channel MOSFET's, although result can be interpreted terms electron temperature as well. This results a relatively simple expression that quantitatively predict current MOSFET's. model compared with measurements on series MOSFET's and good agreement achieved. In process, new values for many physical parameters such scattering mean-free-path, impact-ionization energy are determined. Of...

10.1109/t-ed.1984.21674 article EN IEEE Transactions on Electron Devices 1984-09-01

The phenomenon of and the physical mechanisms for generation minority carriers in substrate NMOS CMOS are studied. Secondary impact ionization is not responsible. responsible hot-electron-induced photocarrier and, under extreme conditions, forward biasing source-substrate junction. photon believed to be due bremsstrahlung channel hot electrons. A theoretical model based on lucky electron concept mechanism proposed. calculated characteristics agree well with experimental results. About 2 × 10...

10.1109/t-ed.1984.21698 article EN IEEE Transactions on Electron Devices 1984-09-01

The clock design for the first implementation of IA-64 microprocessor is presented. A distribution with an active distributed deskewing technique used to achieve a low skew 28 ps. This capable compensating skews caused by within-die process variations that are becoming significant factor design. global, regional and local distributions described. multilevel budget timing methodology enable high-performance providing support intentional injection time borrowing. By test access port interface...

10.1109/4.881198 article EN IEEE Journal of Solid-State Circuits 2000-11-01

Device degradation due to hot-electron injection in n-channel MOSFET's is mainly caused by mobility and reduced mobile charges the channel introduced interface-state generation. With use of simple gradual-channel approximation (GCA), a linear relationship derived between threshold shift, relative transconductance reduction, number interface states generated. This model provides link electrical characteristics degraded device its physical damages and, therefore, vital tool study...

10.1109/edl.1984.25829 article EN IEEE Electron Device Letters 1984-02-01

This paper describes a 2.3 Billion transistors, 8-core, 16-thread, 64-bit Xeon <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> EX processor with 24 MB shared L3 cache implemented in 45 nm nine-metal process. Multiple clock and voltage domains are used to reduce power consumption. Long channel devices sleep mode minimize leakage. Core recovery improve manufacturing yields enable multiple product flavors from the same silicon die. The...

10.1109/jssc.2009.2034076 article EN IEEE Journal of Solid-State Circuits 2010-01-01

This paper presents a real-time fine gesture recognition system for multi-articulating hand prosthesis control, using an embedded convolutional neural network (CNN) to classify hand-muscle contractions sensed at the forearm. The sensor consists in custom non-intrusive, compact, and easy-to-install 32-channel high-density surface electromyography (HDsEMG) electrode array, built on flexible printed circuit board (PCB) allow wrapping around provides low-noise digitization interface with...

10.1109/tbcas.2019.2955641 article EN IEEE Transactions on Biomedical Circuits and Systems 2019-11-26

Avalanche-induced breakdown mechanisms for short-channel MOSFET's are discussed. A simple analytical model that combines the effects due to ohmic drop caused by substrate current and positive feedback effect of lateral bipolar transistor is proposed. It shown two conditions must be satisfied before will occur. One emission minority carriers into from source junction, other sufficient avalanche multiplication cause significant feedback. Analytical theory has been developed with use a...

10.1109/t-ed.1982.21018 article EN IEEE Transactions on Electron Devices 1982-11-01

Myoelectric hand prostheses offer a way for upper-limb amputees to recover gesture and prehensile abilities ease rehabilitation daily life activities. However, studies with prosthesis users found that lack of intuitiveness ease-of-use in the human-machine control interface are among main driving factors low user acceptance these devices. This paper proposes highly intuitive, responsive reliable real-time myoelectric strategy an emphasis on demonstration report evaluation metrics. The...

10.1038/s41598-021-90688-4 article EN cc-by Scientific Reports 2021-05-28

We describe the construction and operation of a catalyst-bed type device for precooling equilibrating ortho/para composition hydrogen gas flow. use this to vapor deposit millimeters thick cryogenic parahydrogen (pH2) solids which are remarkably transparent [M. E. Fajardo S. Tam, J. Chem. Phys. 108, 4237 (1998)]. Infrared absorption spectra deposited at pH2 flow rates up 290 mmol/h (solid thickness growth 75 μm/min indicate residual orthohydrogen (oH2) content less than 0.01%. Gas phase...

10.1063/1.1149734 article EN Review of Scientific Instruments 1999-04-01

We report the rapid vapor deposition of millimeters thick parahydrogen (pH2) solids remarkable optical clarity. Characterization pure pH2 samples by IR and Raman spectra show a very low orthohydrogen vacancy content, mixed hexagonal-closed-packed/face-centered-cubic (hcp/fcc) polycrystalline structure for as-deposited samples, which converts to hcp upon annealing. Efficient isolation atomic molecular dopants is achieved conventional matrix spectroscopy (MIS) techniques. The increased path...

10.1063/1.475822 article EN The Journal of Chemical Physics 1998-03-08

The reaction of laser-ablated Al atoms and normal-H(2) during co-deposition at 3.5 K produces AlH, AlH(2), AlH(3) based on infrared spectra the results isotopic substitution (D(2), H(2) + D(2) mixtures, HD). Four new bands are assigned to Al(2)H(4) from annealing, photochemistry, agreement with frequencies calculated using density functional theory. Ultraviolet photolysis markedly increases yield seven absorptions for Al(2)H(6) in spectrum solid hydrogen sample. These include terminal...

10.1021/ja0353560 article EN Journal of the American Chemical Society 2003-07-01

This paper describes a dual-core 64-b Xeon MP processor implemented in 65-nm eight-metal process. The 435-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> die has 1.328-B transistors. Each core two threads and unified 1-MB L2 cache. 16-MB shared, 16-way set-associative L3 cache implements both sleep shut-off leakage reduction modes. Long channel transistors are used to reduce subthreshold cores uncore (all portions of the that outside...

10.1109/jssc.2006.885041 article EN IEEE Journal of Solid-State Circuits 2007-01-01

SkyLake-SP (Scalable Performance), code name SKX, is the next generation Xeon® server processor fabricated on Intel® 14nm tri-gate CMOS technology with 11-metal layers [1,2]. The SKX family has three core-count configurations. Each core accompanied by 1MB of dedicated L2 (2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> level cache) and 1.375MB non-exclusive L3 (3 xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> cache). At its...

10.1109/isscc.2018.8310170 article EN 2022 IEEE International Solid- State Circuits Conference (ISSCC) 2018-02-01

In this work, we present a hardware-software solution to improve the robustness of hand gesture recognition confounding factors in myoelectric control. The includes novel, full-circumference, flexible, 64-channel high-density electromyography (HD-EMG) sensor called EMaGer. stretchable, wearable adapts different forearm sizes while maintaining uniform electrode density around limb. Leveraging uniformity, propose novel array barrel-shifting data augmentation (ABSDA) approach used with...

10.1109/tbcas.2023.3314053 article EN IEEE Transactions on Biomedical Circuits and Systems 2023-09-11

We present high resolution (∼0.01 cm−1) infrared absorption spectra of the ν4 band methane doped parahydrogen (CH4/pH2) solids produced by two different techniques: gas condensation in an enclosed cell at T≈8 K, and rapid vapor deposition onto a T≈2 K substrate vacuum. The spectrum deposited solid contains novel progression single peaks with ≈5 cm−1 spacing, superimposed over known CH4 molecules trapped sites D3h symmetry hexagonal close-packed (hcp) pH2. New theoretical calculations...

10.1063/1.479717 article EN The Journal of Chemical Physics 1999-09-01

We present infrared (IR) absorption spectra of cryogenic parahydrogen solids doped with small water clusters. observe a sequence peaks shifted to the red by ≈15 cm−1 from absorptions cyclic clusters in liquid helium droplets [K. Nauta and R. E. Miller, Science 287, 293 (2000)]; this includes peak due isomer hexamer: cyc-(H2O)6. believe is only second spectroscopic observation isolated cyc-(H2O)6, first report IR spectrum cluster solid phase.

10.1063/1.1410940 article EN The Journal of Chemical Physics 2001-10-15

A dual-core 64b Xeonreg MP processor is implemented in a 65nm 8M process. The 435mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> die has 1.328B transistors. Each core two threads and unified 1MB L2 cache. 16MB unified, 16-way set-associative L3 cache implements both sleep shut-off leakage reduction modes

10.1109/isscc.2006.1696062 article EN 2006-01-01

The behaviors of the hot-electron gate and substrate currents in very short channel devices were studied. For a test device with electrical length 0.14 µm, current can be detected at 0.9-V drain voltage which is lower than silicon band gap. measured 2.35-V voltage, oxide-silicon energy barrier for electrons. These measurements support quasi-thermal-equilibrium approximation suggest that hot-electron-induced problems cannot eliminated future VLSI MOSFET's arbitrarily channels by reducing bias...

10.1109/edl.1983.25721 article EN IEEE Electron Device Letters 1983-07-01

We present a convenient method for determining the thickness of cryogenic parahydrogen (pH 2 ) solid from its infrared (IR) absorption spectrum. Millimeters-thick pH solids exceptional optical clarity can be produced by rapid vapor deposition [M.E. Fajardo and S. Tam, J. Chem. Phys. 108, 4237 (1998)]. Doping these is readily accomplished co-deposition desired impurities, making them excellent hosts high-resolution matrix isolation spectroscopy. The intensities IR “double” transitions Q 1 (0)...

10.1366/0003702011953946 article EN Applied Spectroscopy 2001-12-01

The clock generation and distribution system for the 130-nm Itanium 2 processor operates at 1.5 GHz with a skew of 24 ps. features 6 MB on-die L3 cache has die size 374 mm/sup 2/. Fuse-based de-skew enables post-silicon optimization to gain higher frequency. This paper describes generation, global distribution, local clocking, feature.

10.1109/jssc.2004.825121 article EN IEEE Journal of Solid-State Circuits 2004-03-30

The infrared spectroscopy and rovibrational dynamics of HCl DCl dopants in solid parahydrogen (pH2) were investigated using high-resolution spectroscopic methods. absorption spectra monomers pH2 closely resemble the corresponding low temperature gas phase spectra, indicating that vibrational rotational quantum numbers dopant are conserved within solid. Small deviations from behavior observed, however, such as a reduced energy level spacing splitting fivefold orientational degeneracy states...

10.1063/1.1421066 article EN The Journal of Chemical Physics 2002-01-08

A correlation between substrate and gate currents in MOSFET's is described analyzed. Both of these are the result hot-electron mechanisms. Theory for mechanisms has been applied to derive an expression current terms parameters that can be calculated from processing data bias conditions. The theory successfully a series n-channel with range geometries values.

10.1109/t-ed.1982.21019 article EN IEEE Transactions on Electron Devices 1982-11-01
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