A5026541877- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Sensor and Energy Harvesting Materials
- Ion-surface interactions and analysis
- Advanced Thermoelectric Materials and Devices
- Innovative Energy Harvesting Technologies
- 3D IC and TSV technologies
- Thermal Radiation and Cooling Technologies
- Silicon Carbide Semiconductor Technologies
- Chalcogenide Semiconductor Thin Films
- Semiconductor Quantum Structures and Devices
- Thermal properties of materials
- Intermetallics and Advanced Alloy Properties
- Energy Harvesting in Wireless Networks
- Nanotechnology research and applications
- Nanowire Synthesis and Applications
- Surface and Thin Film Phenomena
- MXene and MAX Phase Materials
- Advanced biosensing and bioanalysis techniques
- Plasmonic and Surface Plasmon Research
Aselsan (Turkey)
2024
North Carolina State University
2010-2022
North Central State College
2011-2021
Çankaya University
2021
American Society For Engineering Education
2020
Boğaziçi University
2020
Integrated Sensors (United States)
2020
Van Yüzüncü Yıl Üniversitesi
2020
Bilkent University
2010-2015
Motorola (United States)
2005
The transfer of synthesized 2D MoS2 films is important for fundamental and applied research. However, it problematic to translate the well-established processes graphene due different growth mechanisms surface properties. Here we demonstrate a surface-energy-assisted process that can perfectly centimeter-scale monolayer few-layer from original substrates onto arbitrary with no observable wrinkles, cracks, polymer residues. unique strategies used in this include leveraging penetration water...
Computational efficient, quasi-3D model for designing body wearable thermoelectric generators and experimental verification.
This article provides the latest advances from NSF Advanced Self-powered Systems of Integrated sensors and Technologies (ASSIST) center. The work in center addresses key challenges wearable health environmental systems by exploring technologies that enable ultra-long battery lifetime, user comfort wearability, robust medically validated sensor data with value added multimodal sensing, access to open architecture streams. vison ASSIST is use nanotechnology build miniature, self-powered,...
Abstract Harvesting body heat using thermoelectricity provides a promising path to realizing self-powered, wearable electronics that can achieve continuous, long-term, uninterrupted health monitoring. This paper reports flexible thermoelectric generator (TEG) efficient conversion of electrical energy. The device relies on low thermal conductivity aerogel–silicone composite secures and thermally isolates the individual semiconductor elements are connected in series stretchable eutectic...
Shallow p/sup +/-n and n/sup +/-p junctions were formed in germanium preamorphized Si substrates. Germanium implantation was carried out over the energy range of 50-125 keV at doses from 3*10/sup 14/ to 1*10/sup 15/ cm/sup -2/. by 10-keV boron a dose Arsenic implanted 50 5*10/sup -2/ form junctions. Rapid thermal annealing used for dopant activation damage removal. Ge, B, As distribution profiles measured secondary ion mass spectroscopy. Rutherford backscattering spectrometry study...
We report a spray deposition technique for patterning liquid metal alloys to form stretchable conductors, which can then be encapsulated in silicone elastomers via the same spraying procedure. While has been used previously deposit many materials, including metals, this work focuses on quantifying process and combining it with silicones. Spraying generates microparticles (~5 μm diameter) that pass through openings stencil produce traces high resolution (~300 µm using stencils from craft...
This paper reports the thermal conductivity and mechanical properties of Sylgard 184 polydimethylsiloxane (PDMS) elastomer loaded with graphene nano-platelets (GnPs) eutectic Ga-In (EGaIn) liquid metal droplets. We fabricated samples different GnP EGaIn concentrations measured their using steady-state absolute technique. The results show that can be enhanced up to 5.6X when both GNP are included in elastomer. Without EGaIn, enhancement is limited 4.4X. suggest inclusion did not change...
Effective thermal management of electronic systems depends on the heat transfer efficiency or dissipation capability and conductivity sink components, which has a critical impact performance devices. The rapidly growing field microelectronics creates an enormous need for next-generation flexible, lightweight sinks. In this work, microporous nanocomposites are fabricated utilizing unique yet easily tunable processing method, targeting heat-sink applications. highly porous low-density...
The stability of C54 Ti(Si1−yGey)2 films in contact with Si1−xGex substrates was investigated. were formed from the Ti-Si1−xGex solid phase metallization reaction. It determined that initially forms a Ge index y approximately same as x substrate (i.e., y≊x). After formation titanium germanosilicide, Si and continue to diffuse into layer, presumably via lattice grain boundary diffusion. Some diffusing replaces on decreases y<x). We propose this process is driven by reduction crystal...
The heat transfer to a wafer in rapid thermal processing (RTP) furnace is simulated by an analytical/numerical model. model includes radiation the from lamps, conduction within wafer, and emission of wafer. Geometric optics are used predict radiant flux distribution over predicted surface temperature compared measurements made RTP for two different reflector geometries. Lamp configurations resulting irradiance required produce uniform defined.< <ETX...
Low-pressure chemical vapor deposition of Si1−xGex alloys in a cold wall, lamp-heated rapid thermal processor was studied. Alloys were deposited using the reactive gases GeH4 and SiH2Cl2 hydrogen carrier gas. The depositions performed at total pressure 2.5 Torr temperatures between 500 800 °C GeH4:SiH2Cl2 ratios ranging from 0.025 to 1.00. Results showed that can be selectively on silicon SiO2. selectivity is enhanced significantly by addition gas stream. In this work, selective obtained...
Phase transitions that involve solid-state reactions between cobalt and thin films of germanium have been investigated. Germanides are formed by reacting Co (300 Å thick) with layers Ge (∼2000 deposited on silicon substrates. Germanium was Si rapid thermal chemical-vapor deposition onto evaporation. The Co/Ge/Si stacked structure samples were then thermally annealed at atmospheric pressure in an inert ambient consisting Ar. Using x-ray-diffraction spectroscopy, Co5Ge7 CoGe2 identified as the...
Formation of source/drain junctions with a small parasitic series resistance is one the key challenges for CMOS technology nodes beyond 100 nm. A new based on selective deposition heavily in situ doped Si/sub 1-x/Ge/sub x/ layers was recently developed this laboratory. This paper presents formation and structural characterization self-aligned nickel germanosilicide contacts formed boron alloys. The results show that thin NiSi/sub resistivity /spl sim/25 mu//spl Omega/-cm can be alloys at...
A study of low-energy ion implantation processes for the fabrication ultrashallow p/sup +/-n junctions is presented. The resulting are examined in terms four key parameters: defect annihilation, junction depth, sheet resistance, and diode reverse leakage current. In realm very-low-energy implantation, Ge preamorphization found to be largely ineffective at reducing despite fact that as-implanted boron profiles much shallower preamorphized substrates than crystalline substrates. Transmission...
The Schottky barrier height Phi <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</i> of platinum silicide (PtSi) contacts on n-type silicon was tuned by sulfur segregation at the PtSi/Si interface. Sulfur implanted prior to Pt deposition and segregated interface during PtSi formation. It observed that could be changing dose. A minimum 0.12 eV obtained (100) Si substrates. Since naturally provides a small 0.2 p-type Si, it carries potential serve...
A generalized hybrid nanofabrication approach is reported that combines top-down (deep-UV lithography) and bottom-up (controlled lateral epitaxial growth) fabrication techniques for developing nanostructured platforms. This technology allows the development of reproducible substrates with controlled sub-10-nm gaps between plasmonic nanostructures over an entire 6 inch wafer. The nanoplatforms are used surface-enhanced Raman scattering-based detection chemical biological molecules. Detailed...
The vertical scaling requirements for gate stacks and shallow extension junctions are reviewed. For stacks, considerable progress has been made in optimizing oxide/nitride oxynitride dielectrics to reduce boron penetration dielectric leakage compared pure SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> order allow sub-2-nm dielectrics. Several promising alternative material candidates exist 1-nm equivalent oxide thickness (EOT)—for...