Guilherme Migliato Marega

ORCID: 0000-0003-3957-8574
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Research Areas
  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Mechanical and Optical Resonators
  • Interconnection Networks and Systems
  • Advanced MEMS and NEMS Technologies
  • Metamaterials and Metasurfaces Applications
  • Acoustic Wave Resonator Technologies
  • Superconducting Materials and Applications
  • Neural Networks and Applications
  • Physics of Superconductivity and Magnetism
  • Industrial Technology and Control Systems
  • Advancements in Semiconductor Devices and Circuit Design
  • Electronic and Structural Properties of Oxides
  • Neural Networks and Reservoir Computing
  • Bluetooth and Wireless Communication Technologies
  • Metal and Thin Film Mechanics
  • Graph Theory and Algorithms
  • Chalcogenide Semiconductor Thin Films
  • Low-power high-performance VLSI design
  • Topological Materials and Phenomena
  • Analog and Mixed-Signal Circuit Design
  • Transition Metal Oxide Nanomaterials

École Polytechnique Fédérale de Lausanne
2019-2025

Université Grenoble Alpes
2018

Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2017-2018

Excellent mechanical properties and the presence of piezoresistivity make single layers transition metal dichalcogenides (TMDCs) viable candidates for integration in nanoelectromechanical systems (NEMS). We report on realization electromechanical resonators based single-layer MoS2 with both piezoresistive capacitive transduction schemes. Operating ultimate limit membrane thickness, resonant frequency is primarily defined by built-in tension very high range. Using electrostatic interaction a...

10.1038/s41467-019-12795-1 article EN cc-by Nature Communications 2019-10-23

Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n-type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired develop controllable synthesis methods for 2D p-type , which crucial complementary logic applications but remains difficult. In this work, high-quality NbS2 -MoS2 lateral heterostructures are synthesized by one-step metal-organic chemical vapor deposition (MOCVD) together with monolayer...

10.1002/adma.202209371 article EN cc-by-nc-nd Advanced Materials 2023-01-16

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn infer from data generated by smart sensors other for Internet of Things. The next leap toward ubiquitous electronics requires increased energy efficiency processors specialized data-driven applications. Here, we show how an in-memory processor fabricated using a two-dimensional materials platform can potentially outperform its silicon counterparts in both standard...

10.1021/acsnano.1c07065 article EN cc-by-nc-nd ACS Nano 2022-02-15

Metallic two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attracting great attention because of their interesting low-temperature properties such as superconductivity, magnetism, and charge density waves (CDW). However, further studies practical applications being slowed down by difficulties in synthesizing high-quality materials with a large grain size well-determined thickness. In this work, we demonstrate epitaxial chemical vapor deposition (CVD) growth 2D NbS2 crystals...

10.1021/acsnano.1c07956 article EN cc-by-nc-nd ACS Nano 2021-11-10

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance versatility at low temperatures remains elusive. Here we demonstrate large electrically tunable effect by combining the electrical properties of graphene with semiconducting characteristics indium selenide field-effect geometry. Our results establish new platform exploring manipulating this...

10.1038/s41565-024-01717-y article EN cc-by Nature Nanotechnology 2024-07-01

Monolayers of transition-metal dichalcogenides, such as MoS2, have attracted significant attention for their exceptional electronic and optical properties, positioning them ideal candidates advanced optoelectronic applications. Despite strong excitonic effects, the atomic-scale thickness these materials limits light absorption efficiency, necessitating innovative strategies to enhance light–matter interactions. Plasmonic nanostructures offer a promising solution overcome those challenges by...

10.1021/acsnano.4c13867 article EN cc-by ACS Nano 2025-01-09

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking accurate modeling nonvolatile memories (NVMs) based on 2DMs. In this using technology CAD simulations model calibration with experiments, we show that program/erase characteristics floating-gate (FG) devices monolayer molybdenum disulphide can be explained by considering...

10.1109/ted.2022.3208804 article EN cc-by IEEE Transactions on Electron Devices 2022-10-05

Memory devices have returned to the spotlight due increasing interest in using in-memory computing architectures make data-driven algorithms more energy-efficient. One of main advantages this architecture is efficient performance vector-matrix multiplications while avoiding "von Neumann bottleneck." Despite these promises, no single material platform meets all requirements for fabrication new processor technology. Recently, flash memories based on monolayer MoS2 been shown achieve ultra-fast...

10.1109/mnano.2023.3297118 article EN IEEE Nanotechnology Magazine 2023-09-20

This paper presents a 95% power-efficient duty-cycled LDO-assisted voltage selector (LAVS) for fine grained spatial and temporal scaling in FDSOI 28nm technology. LAVS enables 200ns/V controlled transitions between three power rails over 0.5-to-1V range while maintaining the digital activity of supplied load. During transitions, current detections are proposed to protect from reverse current. has 13% Si area overhead drive 0.2 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/esscirc.2018.8494265 preprint EN ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) 2018-09-01

Led by the rise of internet things, world is experiencing exponential growth generated data. Data-driven algorithms such as signal processing and artificial neural networks are required to process extract meaningful information from it. They are, however, seriously limited traditional von-Neuman architecture with physical separation between memory, motivating development in-memory computing. This emerging gaining attention promising more energy-efficient computing on edge devices. In past...

10.48550/arxiv.2303.07183 preprint EN cc-by arXiv (Cornell University) 2023-01-01
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