Anh-Tuan Pham

ORCID: 0000-0003-3976-9178
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About
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Research Areas
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Quantum and electron transport phenomena
  • Chalcogenide Semiconductor Thin Films
  • Silicon Carbide Semiconductor Technologies
  • Advanced Thermoelectric Materials and Devices
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Semiconductor Quantum Structures and Devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Biosensors and Analytical Detection
  • 2D Materials and Applications
  • Advanced biosensing and bioanalysis techniques
  • Thermal properties of materials
  • Research studies in Vietnam
  • Magnetic properties of thin films
  • Quantum Dots Synthesis And Properties
  • Acoustic Wave Resonator Technologies
  • Thin-Film Transistor Technologies
  • Advanced Sensor and Energy Harvesting Materials
  • Nanomaterials and Printing Technologies
  • Metal and Thin Film Mechanics
  • Surface and Thin Film Phenomena
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Surface Polishing Techniques

Phenikaa University
2022-2025

Samsung (United States)
2014-2024

ON Semiconductor (United States)
2014-2024

Electric Power University
2019-2024

Vietnam National University Ho Chi Minh City
2023

University of Ulsan
2017-2023

Ho Chi Minh City University of Science
2023

Phenikaa (Vietnam)
2022

The University of Tokyo
2020

Hanoi University of Science and Technology
2016-2017

High-quality SnSe2 single crystals were successfully synthesized using a temperature gradient method. N-type characteristics and strong anisotropic transport properties of exhibited between the ab plane c-axis. At 673 K, power factor (PF) value along is 3.43 μW cm–1 K–2, while it 0.92 K–2 The ratio thermal conductivities (κab) c-axis (κc) on order 7.6 at 300 this about 5.6 K. thermoelectric figure merit (ZT) in (0.15) higher than that (0.1) plane, according to ultralow out-of-plane...

10.1021/acsaem.0c01846 article EN ACS Applied Energy Materials 2020-09-25

Mở đầu: Kích thích não sâu (KTNS) là phương pháp điều trị xâm lấn giúp cải thiện các triệu chứng vận động ở bệnh nhân Parkinson giai đoạn tiến triển. Tuy nhiên, hiệu quả của KTNS trên từng nhóm Việt Nam hiện vẫn chưa được đánh giá. Phương pháp: Đây một nghiên cứu quan sát cứu. Những triển đã phẫu thuật đưa vào Người tham gia thu thập thông tin về khẩu học, lâm sàng, thuốc trị, số và giá thang MDS-UPDRS lúc “tắt” máy/ thuốc, “bật” máy/”tắt” máy/”bật” thuốc. Phân tích thống kê hành phần mềm...

10.51298/vmj.v547i2.13021 article VI Tạp chí Y học Việt Nam 2025-03-10

The Boltzmann equation for transport in semiconductors is projected onto spherical harmonics such a way that the resultant balance equations coefficients of distribution function times generalized density states can be discretized over energy and real spaces by box integration. This ensures exact current continuity discrete equations. Spurious oscillations are suppressed stabilization based on maximum entropy dissipation principle avoiding H transformation. derived formulation used arbitrary...

10.1063/1.2212207 article EN Journal of Applied Physics 2006-07-15

In this study, we developed an advanced Fe 3 O 4 @C@Ag nanostructure-based SERS substrate, enabling ultra-sensitive, reliable, and practical detection of the low-Raman-cross-section biomolecule, urea.

10.1039/d4ra07487d article EN cc-by RSC Advances 2025-01-01

This study introduces an advanced photo-induced-photo-catalytic SERS (PI-PC SERS) technique, achieving exceptional ultrasensitivity while ensuring substrate reusability.

10.1039/d4ra07718k article EN cc-by-nc RSC Advances 2025-01-01

The hole inversion-layer mobility of strained-SiGe homo- and heterostructure-on-insulator in ultrathin-body MOSFETs is modeled by a microscopic approach. subband structure the quasi-2-D gas calculated solving 6times6koarrldrpoarr Schrodinger equation self-consistently with electrostatic potential. model includes four important scattering mechanisms: optical phonon scattering, acoustic alloy surface-roughness scattering. parameters are calibrated matching measured low-field two particularly...

10.1109/ted.2007.902858 article EN IEEE Transactions on Electron Devices 2007-08-29

Transparent conductive electrodes for applications in optoelectronic devices such as solar cells and light-emitting diodes are important components require low sheet resistance high transmittance. Herein, we report an enhancement of the electrical properties silver (Ag) nanowire networks by coating with zinc oxide using atomic layer deposition technique. A strong decrease Ag nanowires, namely from 20-40 Ω/□ to 7-15 Ω/□, was observed after ZnO. coated 200-cycle ZnO show best quality, a 11...

10.1088/0957-4484/27/33/335202 article EN Nanotechnology 2016-07-05

Two β-galactosidases from Lactobacillus, including a heterodimeric LacLM type enzyme Lactobacillus reuteri L103 and homodimeric LacZ β-galactosidase bulgaricus DSM 20081, were studied for immobilization on chitin using carbohydrate-binding domain (chitin-binding domain, ChBD) chitinolytic enzyme. Three recombinant enzymes, namely, LacLM-ChBD, ChBD-LacLM, LacZ-ChBD, constructed successfully expressed in plantarum WCFS1. Depending the structure of either or heterodimeric, as well positioning...

10.1021/acs.jafc.6b04982 article EN Journal of Agricultural and Food Chemistry 2017-03-20

This paper presents a simulation study of InGaAs, Si, and Ge nFinFETs by solving the coupled drift-diffusion (DD) multisubband Boltzmann transport equation (MSBTE) in 3D domains. The effects quasi-ballistic transport, source/drain contact resistances, band-to-band tunneling (BTBT) on device performance are studied.

10.1109/iedm.2014.7047005 article EN 2014-12-01

In this work, pure, large Br-doped SnSe2 single crystals were successfully synthesized using the temperature gradient technique. Br acts as a donor, resulting in electron concentrations up to ∼6.83 × 1019 cm–3 at room temperature. All samples exhibited metal-like electrical resistivities and Seebeck coefficient behaviors over range of 300–673 K. doping greatly improved power factor, especially along in-plane direction. We observed anisotropy conductivity, coefficient, and, most notably,...

10.1021/acsaem.1c00278 article EN ACS Applied Energy Materials 2021-03-03

Universality of short-channel effects on saturation current MOSFETs has been demonstrated. The modulations carrier injection and transmission rate have integrated into universal functions. proposed form verified by a large set quantum transport simulations, where relevant ranges channel thickness, gate length, scattering mechanisms are covered. As an application, nonlinear scaling width is presented for ultrascaled devices.

10.1109/led.2017.2784099 article EN IEEE Electron Device Letters 2017-12-15

The authors present, for the first time, deterministic 2D multisubband device simulations based on self consistent solution of SE-PE-BTE PMOSFETs including Pauli principle, magnetic fields, and without any simplification subband structure. method yields truly stationary solutions can resolve small changes in due to fields or bias conditions. magnetoresistance mobility extraction is investigated compared conventional technique short channel devices.

10.1109/iedm.2008.4796844 article EN 2008-12-01

We demonstrate a high-performance photodetector with multilayer tin diselenide (SnSe2) exfoliated from high-quality crystal which was synthesized by the temperature gradient growth method. This SnSe2 exhibits high photoresponsivity of 5.11 × 105 A W-1 and specific detectivity 2.79 1013 Jones under laser irradiation (λ = 450 nm). also observed reproducible stable time-resolved photoresponse to incident beam this photodetector, can be used as promising material for future optoelectronic applications.

10.1166/jnn.2018.15189 article EN Journal of Nanoscience and Nanotechnology 2017-12-06

We discuss device models employed in the drift-diffusion simulation of MOSFET transistors at deep cryogenic temperatures. report potential issues commonly used (the Philips unified mobility model, high field saturation incomplete ionization and quantization model) low temperatures how to resolve issues. In addition, we present a band tail model capture subthreshold slope also obtain initial solution perform bias ramping avoid convergence As an application, study temperature-dependent...

10.1109/sispad54002.2021.9592572 article EN 2021-09-27

As the scaling of transistors approaches 7-/5-nm technology nodes, direct source-to-drain tunneling (SDT) is becoming increasingly important with shrinking gate lengths. In this paper, we present a comprehensive simulation study on effects SDT in ultrascaled FETs various channel materials (Si, Ge, SiGe, InGaAs, and so on), surface/channel orientation configurations, lengths, body thicknesses, doping concentrations, stress levels, temperatures. The nonequilibrium Green's function formalism...

10.1109/ted.2017.2656921 article EN IEEE Transactions on Electron Devices 2017-02-07

In this paper, we report the structural and electrical properties of TiZrN thin films deposited by dc-magnetron sputtering under a working pressure 0.67 Pa at room temperature. The phase structure, crystallinity, morphology, properties, hydrophilicity were found to be strongly dependent on nitrogen gas ratio N2/(Ar+N2). vitro Baby hamster kidney (BHK) cell adhesion was also tested for primary biocompatibility evaluation. sputtered exhibit single-phase structure (Ti, Zr)Nx without presence...

10.2320/matertrans.mt-m2023144 article EN MATERIALS TRANSACTIONS 2024-01-14
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