A5101574902- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Diamond and Carbon-based Materials Research
- ZnO doping and properties
- Ferroelectric and Piezoelectric Materials
- Gas Sensing Nanomaterials and Sensors
- Microwave Dielectric Ceramics Synthesis
- Pigment Synthesis and Properties
- Magnetic Properties and Applications
- Metallic Glasses and Amorphous Alloys
- Ga2O3 and related materials
- Copper Interconnects and Reliability
- Bone Tissue Engineering Materials
- Magnesium Oxide Properties and Applications
- Electronic and Structural Properties of Oxides
- Luminescence Properties of Advanced Materials
- Advanced Sensor and Energy Harvesting Materials
- Nuclear materials and radiation effects
- Magnetic Properties of Alloys
- Quantum Dots Synthesis And Properties
- Electrical and Thermal Properties of Materials
- Nanoparticles: synthesis and applications
- Titanium Alloys Microstructure and Properties
- Nanomaterials and Printing Technologies
- Chalcogenide Semiconductor Thin Films
Hanoi University of Science and Technology
2013-2024
Materials Science & Engineering
2024
Le Hong Phong High School for the Gifted
2024
Vietnam Academy of Science and Technology
2012
Chungnam National University
2004-2009
Cho Ray Hospital
1994
Ministry of Health
1994
Tantalum nitride thin films were deposited on substrates at various nitrogen/argon ratios by dc magnetron sputtering. The structural and electrical properties of the are investigated as a function ratio room temperature deposition temperatures. phase changes or TaN in observed increases from 3 to 25%. associated with change resistivity TCR (temperature coefficient resistance) films. values different nitrogen contents negative, strongly decreased increase ratio. 3% show higher thermal...
Using electrochemically exfoliated graphene oxide (GO)-modified screen-printed carbon electrodes for the detection of furazolidone (FZD), a nitrofuran antibiotic, was explored. In this study, we designed some GO samples possessing different oxygen functional group content/defect density by using ultrasonic irradiation or microwave techniques as supporting tools. The difference in physical characteristics led to remarkable change kinetic parameters (electron transfer rate constant (k s) and...
ABSTRACT Reference strains of Staphylococcus aureus ATCC 9144 (NCTC 6571), Escherichia coli 10536 10418) and Pseudomonas aeruginosa 25668 10662) as well bacteria isolated from patient's clinical material were tested for their resistance to different cajuput oil fractions. The antimicrobial effect (−)-linalool, (−)-terpinen-4-ol, (±)-α-terpineol 1,8-cineole constituents have been demonstrated.
In this paper, we report the structural and electrical properties of TiZrN thin films deposited by dc-magnetron sputtering under a working pressure 0.67 Pa at room temperature. The phase structure, crystallinity, morphology, properties, hydrophilicity were found to be strongly dependent on nitrogen gas ratio N2/(Ar+N2). vitro Baby hamster kidney (BHK) cell adhesion was also tested for primary biocompatibility evaluation. sputtered exhibit single-phase structure (Ti, Zr)Nx without presence...
Purpose This paper, drawing on self-enhancement theory and from employee perspective, aims to develop validate an integrative theoretical model that centers the trust–psychological ownership (PO) link investigate information communications technology (ICT) work outcomes. Design/methodology/approach A cross-sectional survey with PLS-SEM analysis of 424 employees in ICT industry Ho Chi Minh City, Vietnam, reports all 10 hypotheses are empirically supported. Findings PO is found be important...
Titanium oxyhonitride thin films were deposited on substrates using reactive dc magnetron sputtering and then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature structural electrical properties was investigated. grain size decreases with increasing temperature. Crystallinity is independent ambient. Resistivity increases remarkably as an coefficience resistance (TCR) varies from a positive value negative value. for...
Bi 1.5 Mg 1.0 Nb O 7 thin films were deposited at various temperatures by rf-magnetron sputtering on Pt/TiO2/SiO2/Si substrates. The structural and electrical properties investigated as a function of deposition temperature. below 400 °C show an amorphous state dielectric constant approximately 31–51. On the other hand, 500 exhibit well-developed crystallinity high 104. However, for crystallized °C, leakage current density is higher than that 300 °C.
Titanium nitride thin films were deposited on substrates at various nitrogen/argon flow ratios using a radio frequency-reactive magnetron sputtering. The structural and electrical properties of the room temperature are characterized as function ratio. Ti(N) phases by nitrogen incorporation into Ti lattice up to 5% formed TiN observed increase above 7%. resistivity coefficient resistance (TCR) values strongly influenced different ratios. A near-zero TCR value approximately was for ratio 3%.
The percolative film capacitor structure of Pt/Bi2Mg2/3Nb4/3O7 [BMN(Ar) films deposited at pure argon atmosphere]/Pt was addressed for achievement a high dielectric constant in the room temperature by radio frequency magnetron sputtering. deterioration leakage current characteristics mitigated using multilayer BMN(O)/BMN(Ar)/BMN(O), where ultrathin BMN(O) were mixed atmosphere and oxygen. An extremely 120 low density 6×10−6 A/cm2 3 V observed BMN as-deposited temperature.
Tantalum nitride thin films were deposited on SiO2 (600 nm)/Si substrates at 200 °C and a nitrogen/argon flow ratio of 3% by dc sputtering technique then annealed various temperatures in vacuum nitrogen ambients. For the both ambients, effect annealing temperature structural electrical properties was systematically investigated. Crystallinity significantly improved as increased. Temperature coefficient resistance (TCR) varied from negative value to positive with increasing The variation TCR...
The authors report the effect of film thickness on electrical properties Ti(N) resistors. applications titanium nitride thin resistor in Π-type attenuators are also characterized. As decreases from 100to30nm, temperature coefficient resistance significantly −60to−148ppm∕K, while sheet increases 37to270Ω∕◻. characterizations 20dB using resistors improved comparison with those thick exhibit an attenuation −19.94dB and voltage standing wave ratio 1.16 at a frequency 2.7GHz.
Abstract Antimony-doped tin oxide (ATO) nanoparticles (NPs) (Sb-doped content 3%, 10%, and 15%) were synthesized by the (2 l autoclave, medium-scale) solvothermal method followed sintering at various temperatures (500°C, 800°C, 900°C 1000°C) so they would crystallize. The particle size increased from several to tens of nanometers with increase sintered temperature 500°C 1000°C, sharply 800°C 1000 °C; ~30 g final product was received for each experiment. More interestingly, crystallinity...
The 30 nm thick (BMN)(O)/200 BMN(Ar)/30 BMN(O) multilayer capacitors were prepared on substrates at room temperature by radio-frequency magnetron sputtering to improve both the dielectric constant and leakage current characteristics. BMN(Ar) percolative BMN show a of approximately 150 63 dissipation factors 0.08 0.02, respectively, 100 kHz. large dispersion properties, while stable property as function frequency. density shows 1 order magnitude lower than that capacitors. conduction...
Ta 2 N films were deposited on SiO2∕Si substrates using reactive dc magnetron sputtering, and then annealed in a vacuum ambient. The structural electrical properties of Ta2N their dependence the film thickness (50–200nm) characterized with respect to application as Π-type attenuators. root mean square roughness temperature coefficient resistance (TCR) increased increasing thickness. near zero TCR value is possible by controlling annealing or sheet 50nm thick are approximately 80Ω∕◻ −24ppm∕K,...