A5103230852- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Advanced Battery Technologies Research
- Advanced Battery Materials and Technologies
- Advancements in Battery Materials
Institute of Microelectronics
2021-2024
Chinese Academy of Sciences
2021-2024
University of Chinese Academy of Sciences
2024
Hafnium oxide-based ferroelectric materials are promising candidates for next-generation nanoscale devices because of their ability to integrate into silicon electronics. However, the intrinsic high coercive field fluorite-structure oxide leads incompatible operating voltage and limited endurance performance. We discovered a complementary metal-oxide semiconductor (CMOS)-compatible rhombohedral Hf(Zr)1+xO2 material rich in hafnium-zirconium [Hf(Zr)]. X-ray diffraction combined with scanning...
The nitridation process can significantly improve the quality of interfacial layer and suppress unrecoverable electron trapping states during cycling, which is main cause endurance enhancement. In this work, through in-depth analysis defect behavior memory window (MW) degradation in ferroelectric field effect transistors (FeFETs), it found that FeFET devices with SiON starts within HZO layer, while SiO2 interlayer initially begins at then penetrates into layer. First, MW processes...
In the last decade, HfO2-based ferroelectric capacitors (FeCaps) have undergone significant advancements, particularly within realm of nonvolatile random access memories (FeRAMs). Nonetheless, READ operation in FeRAMs is inherently destructive, rendering it unsuitable for neuromorphic computing. this study, we engineered tunable capacitances FeCaps, featuring nondestructive readout functionality. Robust capacitance states can be read at a zero d.c. bias (Vbias) with different a.c. signals,...
Abstract The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics. In this work, TiN/Hf 0.5 Zr O 2 /TiN capacitors that free from the wake-up effect investigated systematically room temperature (300 K) to cryogenic (30 K). We observe consistent decrease permittivity ( ε r ) progressive increase coercive electric field E c as decrease. Our investigation reveals exceptional stability double remnant...
The reconstructed phase image of the <italic>in situ</italic> holography unravels Li ion behavior in electrolyte beneath electrode during charging process.
Abstract Electro‐resistance ( ER ) plays a crucial role in the application of hafnia‐based ferroelectric tunnel junctions (FTJs), pivotal devices widely acknowledge for their potential non‐volatile memory and neuromorphic networks. Leveraging atomic layer deposition (ALD) enhances flexibility fabricating bilayer FTJs by combining with another oxide layer. Introducing additional layers is necessary to achieve sufficient storage window implementing intriguing functions, albeit at risk...