A5034856831- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Electrochemical sensors and biosensors
- Viral Infections and Vectors
- Subcritical and Supercritical Water Processes
- Phase-change materials and chalcogenides
- Carbon and Quantum Dots Applications
- Viral Infections and Outbreaks Research
- Microwave Dielectric Ceramics Synthesis
- Peroxisome Proliferator-Activated Receptors
- Soil Moisture and Remote Sensing
- Environmental remediation with nanomaterials
- Radio Astronomy Observations and Technology
- Multiferroics and related materials
- Nanoplatforms for cancer theranostics
- Photodynamic Therapy Research Studies
- Lanthanide and Transition Metal Complexes
- Integrated Circuits and Semiconductor Failure Analysis
- Luminescence and Fluorescent Materials
- 2D Materials and Applications
- Advanced biosensing and bioanalysis techniques
- Energetic Materials and Combustion
Northwest University
2023-2024
Air Force Medical University
2023-2024
Shanghai Polytechnic University
2023-2024
Zhengzhou University
2024
Shaanxi Normal University
2024
Institute of Microelectronics
2021-2023
Chinese Academy of Sciences
2019-2023
University of Chinese Academy of Sciences
2021-2023
Northwestern Polytechnical University
2008-2022
Donghua University
2022
Hafnium oxide-based ferroelectric materials are promising candidates for next-generation nanoscale devices because of their ability to integrate into silicon electronics. However, the intrinsic high coercive field fluorite-structure oxide leads incompatible operating voltage and limited endurance performance. We discovered a complementary metal-oxide semiconductor (CMOS)-compatible rhombohedral Hf(Zr)1+xO2 material rich in hafnium-zirconium [Hf(Zr)]. X-ray diffraction combined with scanning...
In this brief, we reported the improved break- down reliability and endurance in 10-nm Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) using grain boundary interruption. By inserting an amorphous Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer middle of polycrystalline HZO, boundaries penetrating between electrodes were interrupted. Compared with single-layer...
Abstract A new dysprosium(III) phosphonate dimer {Dy(notpH 4 )(NO 3 )(H 2 O)} ⋅ 8 H O ( 1 ) [notpH 6 =1,4,7‐triazacyclononane‐1,4,7‐triyl‐tris(methylenephosphonic acid)] that contains two equivalent Dy III ions with a three‐capped trigonal prism environment is reported. Complex can be transformed into in reversible manner by desorption and absorption of solvent water at ambient temperature. This process accompanied large dielectric response. Magnetic studies reveal both show thermally...
In this letter, the endurance performance of TiN/Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO)/TiN ferroelectric capacitor is significantly improved by increasing N content TiN top electrode. The gas with different flow used in electrode sputter process. Compared to N-deficient capacitor, leakage current density N-rich reduced sixfold (from <inline-formula...
High-performance ferroelectric devices compatible with the Back-End-of-Line (BEOL) process are necessary for their mass production and application. In this letter, pre-crystallization engineering of increasing number cycles ZrO2 HfO2 in each period Hf <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{0.5}}$ </tex-math></inline-formula> Zr0.5O2 (HZO) film growth was utilized to improve property TiN/HZO/TiN...
In this letter, NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> plasma treatment was utilized to improve the ferroelectric property of widely used TiN/Hf xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Zr xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO)/TiN capacitors. The developed metal-ferroelectric-metal (MFM) structure shows high remnant polarization (P...
In this article, we presented a new concept of ferroelectric (FE) modulated antiferroelectric (AFE) memory with independent two-step state switching and large polarization as promising option for multibit storage in advanced technology nodes. Based on the Landau–Ginzburg–Devonshire (LGD) theory, four nonvolatile states AFE built-in field can be obtained, step-by-step among was successfully simulated through pulse engineering; then, stable 2-bit experimentally demonstrated FE/AFE/FE capacitor...
The back-end-of-line (BEOL) process compatibility is one of the advantages Hf0.5Zr0.5O2 (HZO)-based ferroelectric (FE) among other kinds HfO2-doped FEs. However, impact stress effect induced by interconnects during device stacking cannot be ignored. Previous studies about have mainly focused on metal in direct contact with FE layer, but neglected potential effects layers covering electrodes. In this work, interconnecting metals including Cu and W, which are most mainstream modern integrated...
Two-terminal volatile NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> -based threshold switching memristor devices with electrical self-oscillation behavior have attracted tremendous interest for applications in both oscillators and neural networks. However, the forming process of can be a burden limit their application. In this study, forming-free device is obtained by reducing oxygen content film, which simplifies circuit...
To promote the practical application of ferroelectric devices, we present a systematical study on properties 10nm HZO capacitor at high temperature scenarios (300K-400K). We found that Pr value decreases with increase (thermal induced degradation, TIPD) and this phenomenon mainly occurs in case low electric field operation. By using in-situ material characterization, it is proved not caused by phase transition. Further research trap generation redistribution through electrical...
It is widely believed that the fatigue process of ferroelectric HfZrO (HZO) film a permanent damage and unrecoverable, which can be regarded as Time Dependent Dielectric Breakdown (TDDB) process. In this work, HZO under low-electric field found to irrelevant defect generation. Furthermore, fatigued device recovered by higher voltage stimulus then switch normally with lower pulses. This observed recoverable systematically investigated conductance method first-order reversal curve (FORC)...
Flexible energy-storage capacitor has attrac- ted great interest on account of the rapid development combination intelligent systems and flexible electronics. In this work, we fabricated capacitors by depositing Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> Zr xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin films polyimide (PI) substrates using atomic layer...
In this letter, HfO2-based junctionless ferroelectric-gate field effect transistors (FeFETs) and the FeFET NAND memory arrays are proposed experimentally demonstrated, on FDSOI. High performance including ultra-low leakage( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula> pA) ultra-high notation="LaTeX">$\text{I}_{\text {PGM}}/\text{I}_{\text {ERS}}$ ratios (...
On-current and nonlinearity of selector-less RRAM are essential for improving the sensing speed suppressing sneak path leakage respectively in 3D vertical crossbar structure. In this work, by using an oxide which oxygen vacancies do not readily accumulate (NbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> ) to prepare memory layer, 50x on-state current density improvement is achieved with high 5000. The maximum device even higher $(8...
A transmission electron microscopy investigation has been conducted on the domain structure in SrBi2Ta2O9 ceramics. From 90° rotation relationship of diffraction pattern [001] zone axis, a wall can be confirmed. It is due to failure Friedel’s law that contrast 180° identified. The antiphase boundary seen clearly dark-field image, which taken by (300) superlattice reflection. wall, as well (APB), an irregular configuration. APB combined with also
For the first time, we demonstrated a unified approach to combine TRNG and PUF function in 4-layer 3D threshold switching (TS) NbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> array. The dynamic TS variations static leakage current mismatch is utilized for entropy. By digitizing stochastic oscillator periods induced by thermal noise during process, proposed presents ultra-low energy consumption of 0.75 pJ/bit at 2.0 V, excellent...
Due to the global resurgence of hemorrhagic fever with renal syndrome (HFRS), more attention is being focused on this dangerous illness. In China and Korea, only vaccines available are virus-inactivated vaccine against Hantaan virus (HTNV) or Seoul (SEOV), but their efficacy safety inadequate. Therefore, it important develop new that safer efficient neutralize regulate areas a high prevalence HFRS. We employed bioinformatics methods design recombinant protein based conserved regions...