Bing Chen

ORCID: 0000-0001-5284-8618
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About
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Research Areas
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Neuroscience and Neural Engineering
  • Integrated Circuits and Semiconductor Failure Analysis
  • MXene and MAX Phase Materials
  • Advancements in Battery Materials
  • Advanced Battery Materials and Technologies
  • Transition Metal Oxide Nanomaterials
  • Electronic and Structural Properties of Oxides
  • Photonic and Optical Devices
  • Magnetic properties of thin films
  • Manufacturing Process and Optimization
  • Conducting polymers and applications
  • Advanced Battery Technologies Research
  • Organic Electronics and Photovoltaics
  • Organic Light-Emitting Diodes Research
  • Silicon Carbide Semiconductor Technologies
  • Synthesis and properties of polymers
  • Perovskite Materials and Applications
  • CCD and CMOS Imaging Sensors
  • HVDC Systems and Fault Protection
  • Photonic Crystals and Applications
  • Advanced Fiber Laser Technologies

Xidian University
2023-2025

Shaanxi University of Technology
2024-2025

South China University of Technology
2011-2025

Zhejiang University
2015-2024

Xi’an International University
2024

Nanjing University of Posts and Telecommunications
2020-2024

Xuzhou University of Technology
2024

Jiaozuo University
2024

Xi'an University of Architecture and Technology
2019-2023

Shanghai Electric (China)
2023

In this study, 3D hydrogel-based vascular structures with multilevel fluidic channels (macro-channel for mechanical stimulation and microchannel nutrient delivery chemical stimulation) were fabricated by extrusion-based three-dimensional (3D) bioprinting, which could be integrated into organ-on-chip devices that would better simulate the microenvironment of blood vessels. approach, partially cross-linked hollow alginate filaments loading fibroblasts smooth muscle cells extruded through a...

10.1021/acsbiomaterials.6b00643 article EN ACS Biomaterials Science & Engineering 2017-01-18

Neuromorphic computing is an attractive computation paradigm that complements the von Neumann architecture. The salient features of neuromorphic are massive parallelism, adaptivity to complex input information, and tolerance errors. As one most crucial components in a system, electronic synapse requires high device integration density low-energy consumption. Oxide-based resistive switching devices have been shown be promising candidate realize functions synapse. However, intrinsic variation...

10.1021/nn501824r article EN ACS Nano 2014-06-02

The resistive random access memory (RRAM) crossbar array has been extensively studied as one of the most promising candidates for future high-density nonvolatile technology. However, some problems caused by circuit and device interaction, such sneak leakage paths, result in limited size large power consumption, which degrade performance significantly. Thus, analysis on interaction issue is imperative. In this paper, a simulation method developed to investigate critical issues correlated with...

10.1109/ted.2012.2231683 article EN IEEE Transactions on Electron Devices 2012-12-24

A nanoscale, solid-state physically evolving network is experimentally demonstrated, based on the self-organization of Ag nanoclusters under an electric field. The adaptive nature determined by collective inputs from multiple terminals and allows emulation heterosynaptic plasticity, important learning rule in biological systems. These effects are universally observed devices different switching materials.

10.1002/adma.201503202 article EN Advanced Materials 2015-10-20

To solve the "big data" problems that are hindered by Von Neumann bottleneck and semiconductor device scaling limitation, a new efficient in-memory computing architecture based on crossbar array is developed. The corresponding basic operation principles design rules proposed verified using emerging nonvolatile devices such as very low-power resistive random access memory (RRAM). prove architecture, we demonstrate parallel 1-bit full adder (FA) both experiment simulation. A 4-bit multiplier...

10.1109/iedm.2015.7409720 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2015-12-01

Abstract X‐ray imaging technology has been widely used in the fields of environmental monitoring, safety inspection, nondestructive examination, space exploration, and medical diagnosis, among which scintillation materials play a vital role indirectly converting to visible photons. Here, zero‐dimensional organic–inorganic hybrid halide C 50 H 44 P 2 SbCl 5 crystal is prepared via facile antisolvent precipitation method at room temperature. The single displays strong yellow broadband emission...

10.1002/lpor.202201007 article EN Laser & Photonics Review 2023-02-19

HfO<sub>2</sub>-ZrO<sub>2</sub> superlattice (SL) ferroelectric (FE) capacitor is demonstrated to have improved endurance performance and higher fatigue recovery capability compared the HfZrO<sub><i>x</i></sub> (HZO) device. During cycling of polarization (<inline-formula> <tex-math notation="LaTeX">${P}$ </tex-math></inline-formula>) <i>vs.</i> voltage notation="LaTeX">${V}$ loops, SL metal-FE-metal (MFM) exhibits <inline-formula> </tex-math></inline-formula> lower leakage current over HZO...

10.1109/led.2021.3135961 article EN IEEE Electron Device Letters 2021-12-16

In this article, a phase-field polarization switching model for ferroelectric HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based thin films considering oxygen vacancies ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{o}$ </tex-math></inline-formula> ) has been developed based on the 2-D time-dependent Ginzburg–Landau (TDGL) equation coupling with Poisson's equation. The impacts of...

10.1109/ted.2022.3190256 article EN IEEE Transactions on Electron Devices 2022-07-20

Lithium‐sulfur (Li‐S) batteries are promising energy storage devices due to their high theoretical density and cost‐effectiveness. However, the shuttle effect of polysulfides during charging discharging processes leads a rapid decline in capacity, thereby restricting application storage. The separator, crucial component Li‐S batteries, facilitates transport Li+ ions. large pores present on surface separator insufficient prevent shuttling polysulfides. This paper proposes straightforward...

10.1002/asia.202401514 article EN Chemistry - An Asian Journal 2025-01-22

Rapid and precise detection of hydrogen sulfide (H2S) at trace levels is critical for industrial safety environmental air quality monitoring, yet existing methods often struggle with cost, speed, or sensitivity. We introduce a cost-effective cavity ring-down spectroscopy (CRDS) analyzer featuring novel digital locking circuit that enables sequential laser-cavity mode matching, achieving fast accurate H2S parts-per-billion (ppb) levels. Compared to traditional wavelength meters, our system...

10.20944/preprints202502.2056.v1 preprint EN 2025-02-26

Estimating the state of health lithium-ion batteries in energy storage systems is a key step their subsequent safety monitoring and optimization management. This study proposes method for estimating based on feature reconstruction Transformer-GRU parallel architecture to solve problems noisy data poor applicability single model different types operating conditions batteries. First, incremental capacity curve was constructed charging data, smoothed using Gaussian filtering, diverse features...

10.3390/en18051236 article EN cc-by Energies 2025-03-03

Two new diketopyrrolopyrrole-based π-conjugated copolymers (PDPP6T and PDPP7T) have been synthesized by Stille coupling polymerization of 3,6-bis(5′-bromo-[2,2′-bithiophen]-5-yl)-2,5-bis(2-octyldodecyl)pyrrolo-[3,4-c]pyrrole-1,4(2H,5H)-dione with α,α′-bis(trimethylstannyl)-bithiophene α,α′-bis(trimethylstannyl)-terthiophene, respectively. The impressive high mobility 3.94 cm2 V–1 s–1 for the polymer sextetthiophene (6T) 2.82 V–1s–1 septetthiophene (7T) is acquired. It found that introduction...

10.1021/cm402381w article EN Chemistry of Materials 2013-10-15

3D RRAM arrays are studied at the device- and architecture-levels. The memory cell performance for a horizontal cross-point is shown experimentally to be essentially comparable vertical pillar-around geometry. Array performances (read/write, energy, speed) of different architectures investigated by SPICE simulation, showing stacked superior but suffers from higher bit cost. Adopting bi-layer pillar electrode structure demonstrated enlarge array size in RRAM. Design guidelines proposed VRRAM:...

10.1109/iedm.2013.6724693 article EN 2013-12-01

Abstract This work reviews the state-of-the art multi-gate field-effect transistor (MuGFET) process technologies and compares device performance reliability characteristics of MuGFETs with planar Si CMOS devices. Owing to 3D wrapped gate structure, can suppress SCEs improve ON-current due volume inversion channel region. As technology pioneers sub-10 nm nodes, challenges in terms lithography capability, integration controversies, variability etc. were also discussed this work. Due severe...

10.1088/1674-4926/42/2/023102 article EN Journal of Semiconductors 2021-02-01

Mineral oil-based emulsifiable preparations of Beauveria bassiana (Bb) and Paecilomyces fumosoroseus (Pfr) conidia were separately applied alone or together with low rates imidacloprid 10% WP at 4.7% (Im 1), 14.0% 2), 23.3% 3) its recommended application rate, respectively, against the greenhouse whitefly, Trialeurodes vaporariorum, on lettuce grown in greenhouse. Besides eight fungal treatments, three carrier a blank control (CK) also included as treatments trials conducted 2002 2003. For...

10.1080/09583150410001682269 article EN Biocontrol Science and Technology 2004-06-17

Vehicular ad hoc networks (VANETs) have stimulated interests in both academic and industry settings. Once deployed, they would bring a new driving experience to drivers. However, an open-access environment, privacy is one of the greatest challenges, as drivers want keep their personal information protected. Therefore, many authentication protocols been proposed solutions issue. In most existing protocols, prevent revoked entity from generating valid information, verifiers must frequently...

10.1109/access.2018.2876126 article EN cc-by-nc-nd IEEE Access 2018-01-01

We have proposed and experimentally demonstrated a novel multi-bit content addressable memory (CAM) cell based on two series connected ferroelectric FETs (FeFETs). Thanks to the multilevel (MLC) operations of FeFETs complementary inputs search lines (SLs), CAM functions with 2-bits/cell are realized. Bit density can be further boosted by implementing more stable states FeFETs. In addition, cells integrated in form 3D vertical FeFET NAND, which enables ultra-high energy efficiency at low...

10.1109/led.2023.3277845 article EN IEEE Electron Device Letters 2023-05-19

We experimentally reported the photoelectric in-memory logic and computing capabilities of HfO2-based ferroelectric optoelectronic memcapacitors (FOMs). By optimizing annealing process at 600 °C, we achieve a robust noise margin substantial memory window exceeding 9 fF/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , accompanied by an exceptionally low static energy cost below attojoule per operation. Subsequently, our FOMs gained...

10.1109/led.2024.3400990 article EN IEEE Electron Device Letters 2024-05-14
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