A5107843670- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Neuroscience and Neural Engineering
- Solar-Powered Water Purification Methods
- Solar Thermal and Photovoltaic Systems
- Photoreceptor and optogenetics research
- Neuroscience and Neuropharmacology Research
- Transition Metal Oxide Nanomaterials
- Membrane Separation Technologies
- Electronic Packaging and Soldering Technologies
- Computational Fluid Dynamics and Aerodynamics
- 3D IC and TSV technologies
- Neuroinflammation and Neurodegeneration Mechanisms
- Gas Dynamics and Kinetic Theory
- Paleontology and Stratigraphy of Fossils
- Cybersecurity and Information Systems
- IPv6, Mobility, Handover, Networks, Security
- Advanced Welding Techniques Analysis
- GaN-based semiconductor devices and materials
- Metal and Thin Film Mechanics
- Organic Electronics and Photovoltaics
Huashan Hospital
2024
South China University of Technology
2024
Guangzhou Medical University
2024
Guangzhou First People's Hospital
2024
Nanjing University of Posts and Telecommunications
2024
Fudan University
2024
State Key Laboratory of Medical Neurobiology
2024
Nanjing University of Aeronautics and Astronautics
2024
Xi'an Jiaotong University
2024
Yangtze River Pharmaceutical Group (China)
2024
Green plants (Viridiplantae) include around 450,000-500,000 species1,2 of great diversity and have important roles in terrestrial aquatic ecosystems. Here, as part the One Thousand Plant Transcriptomes Initiative, we sequenced vegetative transcriptomes 1,124 species that span a broad sense (Archaeplastida), including green (Viridiplantae), glaucophytes (Glaucophyta) red algae (Rhodophyta). Our analysis provides robust phylogenomic framework for examining evolution plants. Most inferred...
Abstract Memory devices with high speed and density are highly desired to address the ‘memory wall’ issue. Here we demonstrated a scalable, three-dimensional stackable ferroelectric diode, its rectifying polarity modulated by polarization reversal of Hf 0.5 Zr O 2 films. By visualizing hafnium/zirconium lattice order oxygen atomic-resolution spherical aberration-corrected STEM, revealed correlation between spontaneous film displacement atom, thus unambiguously identified non-centrosymmetric...
Abstract HfO 2 ‐based ferroelectric materials are promising candidates for next‐generation nonvolatile memories. Since the first report on Si‐doped thin film in 2011, it has been confirmed that various dopants can induce ferroelectricity films, and “wake‐up” effect films with different deposited by processes studied extensively. Recent developments wake‐up of doped presented. Aside from differences between their deposition methods, electrodes used a capacitor, which determine nature...
For the first time, we experimentally demonstrated a bit cost scalable (BiCS) 8-layer 3D vertical RRAM with ultimate scalability. The design of self-selective cell (SSC) non-filamentary switching were successfully extended to 8 stacks and exhibits salient features, including high nonlinearity (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ), forming free endurance xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> ). An extremely...
The self-rectifying resistive-switching (RS) device is one of the most promising solutions to overcome sneaking current issue in a 3D vertical crossbar array. In this letter, we report CMOS-compatible, forming-free, resistive random access memory with high uniformity and low operation voltage (<;3V) for embedded application. Thanks read voltage, shows robust disturbance (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> )...
In this brief, we reported the improved break- down reliability and endurance in 10-nm Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) using grain boundary interruption. By inserting an amorphous Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer middle of polycrystalline HZO, boundaries penetrating between electrodes were interrupted. Compared with single-layer...
Ferroelectric materials with a perovskite structure have various shortcomings, including poor Si compatibility, large physical thickness, and small bandgap. HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric provide new solution for semiconductor devices. -ZrO solid (HZO) thin films been widely studied due to their low crystallization temperature wide stoichiometric range. Considering its cost flexible deposition...
Diode-like volatile resistive switching as well nonvolatile behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during electroforming process, either or is observed. With lower (<10 μA), device exhibits diode-like with rectifying ratio over 10(6). The permanent transition from to can be obtained by applying higher of 100 μA. Furthermore, using different reset voltages, multilevel memory characteristics high uniformity. coexistence and same opens areas...
In this work, we demonstrated a low cost, BEOL based embedded RRAM technology by adding only one extra mask on standard 28 nm logic platform. Satisfactory characteristics such as forming free, high on/off ratio (>100) and operation speed (<;100 ns) were achieved. Array level performance thermal stability shows both LRS HRS exhibit excellent at temperature up to 260 °C. The resistance fluctuation caused RTN signal atomic structural change clarified experimentally. Memory window reading...
In this letter, the endurance performance of TiN/Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO)/TiN ferroelectric capacitor is significantly improved by increasing N content TiN top electrode. The gas with different flow used in electrode sputter process. Compared to N-deficient capacitor, leakage current density N-rich reduced sixfold (from <inline-formula...
Abstract In dieser Arbeit analysieren wir Techniken zur Berechnung einer Suchrichtung durch die Minimierung des quadratischen Näherungsmodells in dem vom aktuellen Gradienten und der vorangegangenen aufgespannten zweidimensionalen Unterraum. Die klassischen konjugierten Gradientenmethoden sind dabei nur Spezialfälle mit quadratischer Zielfunktion exakten Kantensuchverfahren. Basierend auf unseren Analysen für den Fall nicht exakter Kantensuchverfahren konstruieren neue Algorithmen Typ...
For the first time, we experimentally demonstrated a 10nm node HfZrO based FE-FinFET device with both Charge Trapping and Domain Switching memory effect. Extreme high endurance (> 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> ), operation speed (<;20ns), good data retention (10 xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> @85C), low voltage (<;3V) were identified in charge trapping mode, which is quite promising for e-DRAM...
The 3D crossbar arrays provide a cost-effective approach for high-density integration of resistive switching random-access memory (RRAM). A selector device or self-selective cells can be used to inhibit the sneaking current from unselected cells. coexistence (MS) with inherent nonlinearity and threshold (TS) high density in an individual material system will lead technological benefits neuromorphic computing. However, reported conductive filament (CF)-type MS TS combining devices cannot meet...
A combination of an interfacial solar-thermal water evaporation device and a power module has been emerging to alleviate the shortage fresh electricity. Nevertheless, effective integration solar evaporator achieve both high generation remains significant challenge. Herein, ultrafast good have realized through carbon nanotube (CNT) network-based thermoelectric (TE) module. In device, hydrophobic CNT film as heater surrounding all around, coupled with hydrophilic foam/poly(vinyl alcohol) (PVA)...
In this letter, NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> plasma treatment was utilized to improve the ferroelectric property of widely used TiN/Hf xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Zr xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO)/TiN capacitors. The developed metal-ferroelectric-metal (MFM) structure shows high remnant polarization (P...
This work studies the ferroelectric Hf <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{0}.{5}}$ </tex-math></inline-formula> Zr0.5O2 (HZO) thin film with various designs of intercalation layers. Among studied stacks, HZO films dual notation="LaTeX">$\sim $ 0.05 nm titanium layers (DL-Ti) present ultrahigh remanent polarization ( notation="LaTeX">$2{P}_{{\text {r}}}\sim 57 \mu \text{C}$ /cm2), a low...
To effectively solve the crosstalk issue in highdensity crossbar array (CBA), high rectifying characteristics should be introduced resistance random-access memory (ReRAM) device, and in-depth understanding of affecting factors on properties is essential for large-scale application ReRAM. In this paper, a highperformance self-rectifying device with CMOS compatible Pd/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TaO...
In this article, we presented a new concept of ferroelectric (FE) modulated antiferroelectric (AFE) memory with independent two-step state switching and large polarization as promising option for multibit storage in advanced technology nodes. Based on the Landau–Ginzburg–Devonshire (LGD) theory, four nonvolatile states AFE built-in field can be obtained, step-by-step among was successfully simulated through pulse engineering; then, stable 2-bit experimentally demonstrated FE/AFE/FE capacitor...
Benefiting from the abundant solar energy and emergence of photothermal conversion equipment, solar-driven water evaporation has shown great potential in seawater desalination. One common problem for solar-thermal is that salt crystallized on surface absorbers during process will significantly deteriorate continuity efficiency process. In most reports, efforts have been made to transfer accumulated salts, while studies preventing crystallization, which leads better production, are limited....
Purpose This study aims to provide guidance for the reliability of electronic packaging. The solder joints at extremely temperature thermal shock is critical equipment operating in field deep space exploration. In this study, Sn3.0Ag0.5Cu (SAC305)/Cu were prepared and thermally shocked with temperatures ranging from −110°C 110°C, investigate effects extreme on microstructural evolution property deterioration joints. Design/methodology/approach interfacial intermetallic compound (IMC) stress...