A5043123329- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- MXene and MAX Phase Materials
- Analytical Chemistry and Sensors
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Advanced biosensing and bioanalysis techniques
- Transition Metal Oxide Nanomaterials
- Graphene research and applications
- Atmospheric chemistry and aerosols
- Integrated Energy Systems Optimization
- 2D Materials and Applications
- Silicon Carbide Semiconductor Technologies
- Soil Mechanics and Vehicle Dynamics
- Copper Interconnects and Reliability
- Radiation Effects in Electronics
- Vibration and Dynamic Analysis
- Carbon Nanotubes in Composites
- Conducting polymers and applications
- Air Quality and Health Impacts
- Smart Grid Energy Management
Chinese Academy of Sciences
2016-2025
Institute of Microelectronics
2016-2025
Huzhou University
2015-2025
Southeast University
2025
Shandong University
2015-2024
University of Chinese Academy of Sciences
2016-2024
Tianjin University of Technology
2020-2024
Tianjin University
2020-2024
Chengde Medical University
2022
General Research Institute for Nonferrous Metals (China)
2017-2020
ABSTRACT Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits (ICs) have mainly relied on structural innovations transistors. From planar transistors to the fin field-effect transistor (FinFET) and gate-all-around FET (GAAFET), more gate electrodes been added three-dimensional (3D) channels with enhanced control carrier conductance provide higher electrostatic integrity operating currents within same device footprint. Beyond 1-nm node, Moore’s law...
Noncoding RNAs have been extensively described in plant and animal transcriptomes by using high-throughput sequencing technology. Of these noncoding RNAs, a growing number of long intergenic (lincRNAs) multicellular organisms, however the origins functions many lincRNAs remain to be explored. In eukaryotic genomes, transposable elements (TEs) are widely distributed often account for large fractions genomes yet contribution TEs is largely unknown. By strand-specific RNA-sequencing, we...
A recent technological trend in the field of electrochemical energy storage is to integrate and electrochromism functions one smart device, which can establish efficient user-device interactions based on a friendly human-readable output. This type newly born technology has drawn tremendous attention. However, there still plenty room for material innovation, would allow advancement research field. prototype Al-tungsten oxide electrochromic battery with interactive color-changing behavior...
Dual‐band electrochromic composite materials are of utmost importance in advancing the field toward achieving ideal smart window with independent control over visible and near‐infrared (NIR) radiation. However, such composites usually need deliberate architecting their mesoscale structure (e.g., via block copolymer‐templating method) to make electrolyte contact both NIR visible‐light modulating components. Herein, instead arduously making exterior pores, intrinsic structural tunnels utilized...
Abstract Exosomes are highly important in clinical diagnosis due to their high homology with parental cells. However, conventional exosome detection methods still face the challenges of expensive equipment, low sensitivity, and complex procedures. Field effect transistors (FETs) not only most essential electronic component modern microelectronics industry but also show great potential for biomolecule owing advantages rapid response, label-free detection. In this study, we proposed a Si...
High-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides (Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) layer are fabricated based on conventional high-κ metal gate fabrication flow. The devices show improved subthreshold swing values [34.5 mV/dec for 500-nm length (L...
The efficient uptake is important for the xylose utilization by Saccharomyces cerevisiae. A heterogenous transporter Mgt05196p was cloned from Meyerozyma guilliermondii and expressed in cerevisiae[1]. This data article contains transport characteristics of S. fluorescence fusion protein Mgt05196p-GFP expressing strain located on cell surface demonstrated that targeted to plasma membrane hxt null cerevisiae endowed with glucose d-xylose absorption capacity, as well native Gal2p. transmembrane...
A new type of vertical nanowire (NW)/ nanosheet (NS) field-effect transistors (FETs), termed sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work. Moreover, an integration flow that compatible with processes used the mainstream industry proposed for VSAFETs. Si/SiGe epitaxy, isotropic quasi-atomic-layer etching (qALE), and gate replacement were to fabricate pVSAFETs first time. Vertical GAA self-aligned high-k metal gates a small effective-gate-length variation obtained....
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk substrate are systemically investigated. The release process NS channels was firstly optimized to achieve uniform device structures. An over 100:1 selective wet-etch ratio GeSi layer achieved for GeSi/Si stacks samples with different thickness (5 nm, 10 and 20 nm) or annealing temperatures (≤900 °C). Furthermore, influence ground-plane (GP) doping in sub-fin region...
The implementation of vertically stacked gate-all-around nanosheet FET (GAA NSFET) may help improve the performance static random access memory (SRAM) for design flexibility with variable NS widths. However, method that often relies on increasing device width higher driving current is to cause an increased SRAM cell area and degrade scalability transistor in advanced nodes. In this article, innovated bitcell hybrid integration Si NSFET Si/SiGe super-lattice FinFET (SL-FinFET) one proposed...
We present a comprehensive theoretical investigation of the quantum confinement limited mobility in Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Ge xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -channel gate-all-around nanosheet field effect transistor for 5-nm node. The study encompasses physics-based mechanical models both P and NMOS with specified channel/wafer orientations channel thicknesses: (1) k.p model Poisson...
In this letter, Gate-All-Around (GAA) nanowire (NW) p-MOSFETs with new approaches to fabricate totally isolated channels in replacement metal gate (RMG) are reported for the first time. Few reformed fin forming processes based on conventional high- <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</i> /metal FinFET flow implemented GAA devices. Two profiles of NW channels, such as circular and inverted droplet, were fabricated by H <sub...
Abstract In this work, a conventional HfO 2 gate dielectric layer is replaced with 3-nm ferroelectric (Fe) HZO in the stacks of advanced fin field-effect transistors (FinFETs). Fe-induced characteristics, e.g., negative drain induced barrier lowering (N-DIBL) and differential resistance (NDR), are clearly observed for both p- n-type HZO-based FinFETs. These characteristics attributed to enhanced ferroelectricity hafnium zirconium oxide (HZO) film, caused by Al doping from TiAlC capping...
In this paper, a near-ideal subthreshold swing MoS2 back-gate transistor with an optimized ultrathin HfO2 dielectric layer is reported detailed physical and electrical characteristics analyses. Ultrathin (10 nm) films created by atomic-layer deposition (ALD) at low temperature rapid-thermal annealing (RTA) different temperatures from 200 °C to 800 have great effect on the characteristics, such as (SS), on-to-off current (I ON/I OFF) ratio, etc, of devices. Physical examinations are...
Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which a promising candidate beyond fin field effective (FinFETs) technologies in near future. These deal with several challenges brought by shrinking of device dimensions. The preparation inner spacers is one most critical processes GAA nano-scale transistors. This study focuses on two key processes: spacer film conformal deposition and accurate etching. results show that low pressure...
Acute kidney injury (AKI) is a frequently occurring severe disease with high mortality. Cystatin C (Cys-C), as biomarker of early failure, can be used to detect and prevent acute renal injury. In this paper, biosensor based on silicon nanowire field-effect transistor (SiNW FET) was studied for the quantitative detection Cys-C. Based spacer image transfer (SIT) processes channel doping optimization higher sensitivity, wafer-scale, highly controllable SiNW FET designed fabricated 13.5 nm SiNW....
The current emission characteristics of volatile organic compounds (VOCs) in the plywood manufacturing industry are not yet clearly understood, and their impact on occupational health warrants attention. This study examines VOC concentrations adhesive-coating hot-pressing workshops, aiming to discern evaluate risks workers. calculated factors range from 1.5 3.6 g/m3 for plywood, an average total concentration 954.17 μg/m3 is observed. Hot pressing (336.63 μg/m3) adhesive coating (276.24...
The large parasitic resistance has become a critical limiting factor to on current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> ) of FinFET and nanowire devices. Fully metallic source drain (MSD) process is one the most promising solutions but it often suffers from intolerant junction leakage in bulk FETs. In this paper, fully MSD fin-on-insulator (FOI) investigated extensively for first time. By forming Ni(Pt) silicide physically...
For the first time, we experimentally demonstrated a 10nm node HfZrO based FE-FinFET device with both Charge Trapping and Domain Switching memory effect. Extreme high endurance (> 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> ), operation speed (<;20ns), good data retention (10 xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> @85C), low voltage (<;3V) were identified in charge trapping mode, which is quite promising for e-DRAM...
We presented and demonstrated a new type of vertical nanowire (NW) nanosheet (NS) field-effect transistors (FETs), named sandwich gate-all-around FETs or VSAFETs, which were formed with the process compatible in main stream industry. The VSAFETs self-aligned high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> metal gates (HKMGs) fabricated epitaxy Si/SiGe/Si structure,...
Nonvolatile logic devices are crucial for the development of logic-in-memory (LiM) technology to build next-generation non-von Neumann computing architecture. Ferroelectric field-effect transistors (Fe FET) one most promising candidates LiMs because high compatibility with mainstream silicon-based complementary metal-oxide semiconductor processes, nonvolatile memory, and low power consumption. However, unipolar characteristics a Fe FET, nonlinear XOR or XNOR gate function is difficult...