A5069723560- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Radiation Effects in Electronics
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- VLSI and Analog Circuit Testing
- MXene and MAX Phase Materials
- Graphene research and applications
- Phase-change materials and chalcogenides
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Magnetic Field Sensors Techniques
- Electrostatic Discharge in Electronics
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Low-power high-performance VLSI design
- Analytical Chemistry and Sensors
- Electrocatalysts for Energy Conversion
- Ferroelectric and Piezoelectric Materials
- Silicon Carbide Semiconductor Technologies
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Fuel Cells and Related Materials
- Ga2O3 and related materials
Institute of Microelectronics
2016-2025
Chinese Academy of Sciences
2016-2025
Guizhou Normal University
2023-2025
North China Electric Power University
2024
China Electric Power Research Institute
2024
University of Chinese Academy of Sciences
2017-2024
Nanjing University of Science and Technology
2024
Sichuan University
2024
Academia Sinica
2022
Beijing Microelectronics Technology Institute
2021
Abstract In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits, reliable electronic synapses mimicked by single device that achieves diverse long‐term and short‐term plasticity are essential. Phase change random access memory (PCRAM) is of great potential for artificial synapses, which faces, however, difficulty realize due long‐lasting resistance drift. This work reports ruthenium‐doped Ge 2 Sb Te 5 (RuGST) based PCRAM, demonstrating a...
The application of atomristor (thinnest memristor based on monolayer 2D materials) in integrated circuits could help extend the semiconductor technology to atomic scale, which offers a more positive portrait far beyond Moore's law and neuromorphic computing. However, it is still unclear whether nonmetallic filament conductive mechanism exist these thinnest memristors. Here, resistive switching characteristics h-BN atomristors with different electrodes are systematically investigated, found...
In this brief, we reported the improved break- down reliability and endurance in 10-nm Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) using grain boundary interruption. By inserting an amorphous Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer middle of polycrystalline HZO, boundaries penetrating between electrodes were interrupted. Compared with single-layer...
Abstract Long‐term plasticity of bio‐synapses modulates the stable synaptic transmission that is quite related to encoding information and its emulation using electronic hardware one important targets for neuromorphic computing. Ge 2 Sb Te 5 (GST) based phase change random access memory (PCRAM) has become a strong candidate complementary‐metal‐oxide‐semiconductor (CMOS) compatible integrated long‐term synapses cope with high‐efficient low power consumption data processing tasks However,...
This paper investigates total-ionizing dose effects on the electrical characteristics of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Hf-based bipolar resistive-random-access-memory (RRAM) devices. 10-keV x-ray irradiation does not cause significant changes in resistance at levels up to 7 Mrad( SiO ). Excess carriers generated by layer recombine or are trapped defect sites interfaces between layers. They have no effect, however,...
In this article, mechanisms of extremely low OFF-state current and abnormal negative bias stress (NBS) are systematically investigated by the varying process that contains various gas ratios flows during In–Ga–Zn–O (IGZO) sputtering, different annealing conditions. One model is proposed to indicate level ultralow leakage in IGZO thin-film transistor (TFT) dominated trap-limited conduction (TLC) along with internal chemical states film, which highly consistent results acquired X-ray...
Abstract Organic field‐effect transistors (OFETs) have broad prospects in biomedical, sensor, and aerospace applications. However, obtaining temperature‐immune OFETs is difficult because the electrical properties of organic semiconductors (OSCs) are temperature‐sensitive. The zero‐temperature coefficient (ZTC) point behavior can be used to achieve a output current; however, it devices with thermal activation characteristics, according existing ZTC theory. Here, Fermi pinning OSCs eliminated...
The effect of high- and low-temperature conditions on the performance IGZO TFT logic circuits were investigated in this work. In temperature range 250−350 K, did not show significant changes exhibited a certain degree resistance. When was below 250 as decreased, threshold voltage (VTH) significantly increased, field mobility (μFE) state current (ION) decreased. This is attributed to lower excitation charge carriers at extremely low temperatures, resulting fewer transitioning conduction or...
Lanthanides are largely used in optoelectronics as dopants to enhance the physical and optical properties of semiconducting devices. In this study, lanthanum(III)hydroxide nanoparticles (La(OH)3NPs) a dopant polyethylenimine (PEI)-functionalized nitrogen (N)-doped graphene quantum dots (PEI-NGQDs). The La(OH)3NPs-dopedPEI-NGQDs nanocomposites prepared from La(NO)3 single step by green novel method characterized Fourier-transform infrared spectroscopy (FT-IR), ultraviolet-visible (UV-vis),...
Abstract Herein, the photoluminescence (PL) measurements were used to study and investigate degradation behavior of flexible GaInP/GaAs/InGaAs inverted metamorphic triple-junction (IMM3J) photovoltaics (PV) under 1 MeV electron irradiation. The changes in PL intensity with varying irradiation fluence enabled acquisition effective minority carrier lifetimes ( τ eff ) for top GaInP, middle GaAs, bottom InGaAs subcells different conditions. Comparing before after irradiation, it was found that...
Artificial sense technologies predominantly rely on visual and tactile input, which often prove inadequate in obscured or opaque environments. Inspired by the natural electrosensory capabilities of electrogenic fishes, we introduce an organic electrosense transistor designed to detect electric fields generated nearby objects, facilitating creation impalpable perception systems. Unlike traditional sensors, our perceives bipolar with high sensitivity stability. We use compact models device...
In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and synergistic total dose irradiation on single-event transient (SET) in silicon-germanium heterojunction bipolar transistors silicon-on-insulator (SiGe-on-SOI HBTs) were investigated using TCAD simulations. It was demonstrated that, compared to bulk SiGe HBT, SiGe-on-SOI HBT exhibits lower current less charge collection, indicating better...
Single-event upsets in 1T1R Resistive Random Access Memory (RRAM) structures are experimentally demonstrated by generating current transients the access transistors of memory cells. The relationship between single-event upset threshold RRAM and applied voltage is exponential, which verified using TPA laser analysis heavy-ion irradiation. Multiple-Event Upsets (MEUs) also occur, where individual ions incrementally change RRAM's resistance until their cumulative effect causes an upset. models...
In this article, we presented a new concept of ferroelectric (FE) modulated antiferroelectric (AFE) memory with independent two-step state switching and large polarization as promising option for multibit storage in advanced technology nodes. Based on the Landau–Ginzburg–Devonshire (LGD) theory, four nonvolatile states AFE built-in field can be obtained, step-by-step among was successfully simulated through pulse engineering; then, stable 2-bit experimentally demonstrated FE/AFE/FE capacitor...
This paper presents a new SEU-tolerant latch design based on Quatro and NMOS feedback transistors. By using these transistors, the SEU susceptibility is decreased because of cutoff loop. Simulation results demonstrate that proposed immune to static single node upsets. The reference were designed fabricated 130 nm process. test chip was exposed heavy ions at TAMU Cyclotron facility. testing show has higher upset LET threshold lower cross-section when compared latch. Its vulnerability comes...