A5009983855- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- Nuclear Physics and Applications
- Radiation Detection and Scintillator Technologies
- X-ray Diffraction in Crystallography
- Particle Detector Development and Performance
- X-ray Spectroscopy and Fluorescence Analysis
- VLSI and Analog Circuit Testing
- Radiation Therapy and Dosimetry
- Advanced X-ray Imaging Techniques
- Electron and X-Ray Spectroscopy Techniques
- Particle accelerators and beam dynamics
- Nuclear reactor physics and engineering
- Nuclear materials and radiation effects
- Diamond and Carbon-based Materials Research
- Particle Accelerators and Free-Electron Lasers
- Advanced Chemical Physics Studies
- Glass properties and applications
- Advancements in Semiconductor Devices and Circuit Design
- Planetary Science and Exploration
- Electrostatic Discharge in Electronics
- Advanced Semiconductor Detectors and Materials
- Crystallography and Radiation Phenomena
National Institute of Standards and Technology
2015-2023
United States Department of Commerce
2021-2023
Material Measurement Laboratory
2020
Vanderbilt University
2006-2015
Fermi National Accelerator Laboratory
2014
Northern Illinois University
2014
Advanced Energy Systems (United States)
2014
Vanderbilt Health
2014
University of Southern California
2006
W. M. Keck Foundation
1999
In this paper, we describe a Monte Carlo approach for estimating the frequency and character of single event effects based on combination physical modeling discrete radiation events, device simulations to estimate charge transport collection, circuit determine effect collected charge. A mathematical analysis procedure reveals it be closely related rectangular parallelepiped (RPP) rate prediction method. The results these show that event-to-event variation may have significant impact when...
Delivering sufficient dose to tumours while sparing surrounding tissue is one of the primary challenges radiotherapy, and in common practice this typically achieved by using highly penetrating MV photon beams spatially shaping dose. However, there has been a recent increase interest possibility contrast agents with high atomic number enhance deposited when used conjunction kV x-rays, which see significant absorption due heavy element's high-photoelectric cross-section at such energies....
Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported for other deep submicron technologies. The experimental data are used calibrate Monte Carlo rate prediction model, which evaluate the importance of this upset mechanism typical space environments. For ISS orbit and geosynchronous (worst day) orbit, direct major contributor total error rate, but (solar min) proton flux too significant number events. implications these...
Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code. Electronic and nuclear physics were used to generate statistical profiles of charge deposition in the sensitive volume an SEU hardened SRAM. Simulation results show that materials external can affect experimentally measured cross-section curve.
Experimental evidence and Monte-Carlo simulations for several technologies show that accurate SEE response predictions depend on a detailed description of the variability radiation events (e.g., nuclear reactions), as opposed to classical single-valued LET parameter. Rate conducted with this simulation framework exhibit excellent agreement average observed SEU rate NASA's MESSENGER mission Mercury, while prediction from traditional IRPP method, which does not include contribution ion-ion...
Experimental data are presented that show low-energy muons able to cause single event upsets in 65 nm, 45 and 40 nm CMOS SRAMs. Energy deposition measurements using a surface barrier detector characterize the kinetic energy spectra produced by M20B muon beam at TRIUMF. A Geant4 application is used simulate estimate incident on memories. Results indicate sensitivity this mechanism will increase for scaled technologies.
The probability of proton-induced multiple-bit upset (MBU) has increased in highly-scaled technologies because device dimensions are small relative to particle event track size. Both single (SEU) and MBU responses have been shown vary with angle energy for certain technologies. This work analyzes SEU a 130 nm CMOS SRAM which the single-event response shows strong dependence on proton incidence. Current testing methods do not account orientation beam and, subsequently, error rate prediction...
We present experimental evidence of single-event upsets in 28 and 45 nm CMOS SRAMs produced by single energetic electrons. Upsets are observed within 10% nominal supply voltage for devices built the technology node. Simulation results provide supporting that electrons generated incident X-rays. The errors shown not to be result "weak bits" or photocurrents resulting from collective energy deposition Experimental consistent with bias sensitivity critical charge direct ionization effects...
Monte-Carlo radiation transport simulations are used to quantify energy deposition from δ -rays in sensitive volumes representative of future SRAM technologies. The results show that single and multiple δ-ray events capable depositing sufficient cause SEUs nonadjacent cells separated by many micrometers. These indicate the necessity considering variability charge track structure when evaluating event response these highly scaled technology nodes. effects have important implications...
Experimental results are presented that indicate technology scaling increases the sensitivity of microelectronics to soft errors from low-energy muons. Results for 65, 55, 45, and 40 nm bulk CMOS SRAM test arrays. Simulations suggest an increasing role muons in error rate smaller technologies.
This anthology contains contributions from eleven different groups, each developing and/or applying Monte Carlo-based radiation transport tools to simulate a variety of effects that result energy transferred semiconductor material by single particle event. The topics span basic mechanisms for single-particle induced failures applied tasks like websites predict on-orbit event failure rates using Carlo tools.
MRED is a Python-language scriptable computer application that simulates radiation transport. It the computational engine for on-line tool CRÈME-MC. based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions high precision. We provide detailed description of structure implementation simulation physical processes used effects in electronic devices circuits. Extensive discussion references are provided illustrate validation models...
Pulsed Tunable Monochromatic X-Ray Beams from a Compact Source: New OpportunitiesFrank E. Carroll1, Marcus H. Mendenhall2, Robert Traeger1, Charles Brau2 and James W. Waters2Audio Available | Share
Simulations show that neglecting ion-ion interaction processes (both particles having Z>1) results in an underestimation of the total on-orbit single event upset error rate by more than two orders magnitude for certain technologies. The inclusion nuclear reactions leads to dramatically different SEU rates CMOS devices containing high Z materials compared with direct ionization primary ion alone. Device geometry and material composition have a dramatic effect on charge deposition small...
The RADSAFE simulation framework is described and applied to model SEU in a 0.25 mum CMOS 4 Mbit SRAM. For this circuit, the approach produces trends similar those expected from classical rectangular parallelepiped models, but more closely represents physical mechanisms responsible for SRAM circuit.
Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate the traditional single sensitive volume or classical rectangular parallelepiped model of event upset. TCAD and SPICE analysis demonstrate SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to response predict an on-orbit error rate.
Simulation results for the full galactic cosmic ray environment demonstrate that current accelerator-based test methods using linear energy transfer as engineering metric to characterize single event effects are not sufficient capture nuclear reaction portion of response. Nuclear reactions contribute significantly on-orbit single-event rates compared those from direct ionization induced by primary ions. Based on these results, applicability predicting is examined and improved procedures...
A comprehensive mathematical framework is established that encompasses both Monte Carlo single event effects (SEE) rate prediction and analytical approximations based on a rectangular parallelepiped (RPP). Criteria derived from consideration of multiple devices technologies are presented useful in identifying situations where RPP-model predictions SEE rates may not be appropriate should augmented or replaced by advanced physical modeling.
Gold nanoparticles (GNPs) are of considerable interest for use as a radiosensitizer, because their biocompatibility and ability to increase dose deposited high mass energy absorption coefficient. Their sensitizing properties have been verified experimentally, but discrepancy between the experimental results theoretical predictions suggests that effect does not depend solely on gold's superior energetic photons. This work presents three sets experiments independently mapped out dependence...
We describe a tool suite, CRÈME, which combines existing capabilities of CREME96 and CREME86 with new radiation environment models Monte Carlo computational for single event effects total ionizing dose.
The structure of the x-ray emission lines Cu complex has been remeasured on a newly commissioned instrument, in manner directly traceable to Système Internationale definition meter. In this measurement, region from 8000 8100 eV covered with highly precise angular scale, and well-defined system efficiency, providing accurate wavelengths relative intensities. This measurement updates standard multi-Lorentzian-fit parameters Härtwig, Hölzer, et al, is modest disagreement their results for...
The National Institute of Standards and Technology (NIST) certifies a suite Standard Reference Materials (SRMs) to evaluate specific aspects instrument performance both X-ray neutron powder diffractometers. This report describes SRM 660c, the fourth generation this diffraction SRM, which is used primarily for calibrating diffractometers with respect line position shape determination profile function (IPF). It certified lattice parameter consists approximately 6 g lanthanum hexaboride (LaB )...