A5071071155- Radiation Effects in Electronics
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- VLSI and Analog Circuit Testing
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- Low-power high-performance VLSI design
- Silicon Carbide Semiconductor Technologies
- Radiation Detection and Scintillator Technologies
- Physical Unclonable Functions (PUFs) and Hardware Security
- Radiation Therapy and Dosimetry
- Advanced MEMS and NEMS Technologies
- Ion-surface interactions and analysis
- Mechanical and Optical Resonators
- Advanced Battery Technologies Research
- Advanced Memory and Neural Computing
- CCD and CMOS Imaging Sensors
- Particle Detector Development and Performance
- Advanced Optical Sensing Technologies
- Reliability and Maintenance Optimization
- Semiconductor Quantum Structures and Devices
- Force Microscopy Techniques and Applications
- Photonic and Optical Devices
- Diamond and Carbon-based Materials Research
- Analytical Chemistry and Sensors
Vanderbilt University
2015-2025
University of Tennessee at Chattanooga
2014
Hebrew University of Jerusalem
1985
Charge sharing between adjacent devices can lead to increased Single Event Upset (SEU) vulnerability. Key parameters affecting charge are examined, and relative collected at the hit node nodes quantified. Results show that for a twin-well CMOS process, PMOS be effectively mitigated with use of contacted guard-ring, whereas combination nodal separation, interdigitation is required mitigate NMOS effect technology studied
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC MOSFETs show a significant decrease SEB onset voltage particle linear energy transfers greater than 10 MeV/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /mg, above which the threshold nearly constant at half of rated maximum operating these devices. TCAD simulations parasitic bipolar junction...
Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion also leakage current degradation both devices. This mechanism, based on ion-induced, highly localized energy pulses, demonstrated simulations shown to be capable of causing SEB the JBS
A three-dimensional (3D) technology computer-aided design (TCAD) model was used to simulate charge collection at multiple nodes. Guard contacts are shown mitigate the and more quickly restore well potential, especially in PMOS devices. Mitigation of shared NMOS devices is accomplished through isolation P-wells using a triple-well option. These techniques have been partially validated heavy-ion testing three versions flip-flop shift register chains.
Circuit and 3D technology computer aided design mixed-mode simulations show that the single event upset vulnerability of 130- 90-nm hardened latches to low linear energy transfer (LET) particles is due charge sharing between multiple nodes as a result ion strike. The LET verified experimentally.
Ion-induced degradation and catastrophic failures in high-voltage SiC junction barrier Schottky power diodes are investigated. The experimental results agree with earlier data showing discrete jumps leakage current for individual ions show that the boundary between a single-event-burnout-like effect is strong function of linear energy transfer reverse bias. TCAD simulations high localized electric fields under junction, temperatures generated directly contact, consistent hypothesis ion...
Heavy-ion testing of a radiation-hardened-by-design (RHBD) 90 nm dual interlocked cell (DICE latch) shows significant directional sensitivity results impacting observed cross-section and LET thresholds. 3-D TCAD simulations show this effect is due to charge sharing parasitic bipolar effects n-well potential collapse.
We present experimental evidence of single-event upsets in 28 and 45 nm CMOS SRAMs produced by single energetic electrons. Upsets are observed within 10% nominal supply voltage for devices built the technology node. Simulation results provide supporting that electrons generated incident X-rays. The errors shown not to be result "weak bits" or photocurrents resulting from collective energy deposition Experimental consistent with bias sensitivity critical charge direct ionization effects...
Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs junction barrier Schottky (JBS) diodes. Simulations reduction of dissipation along core ion track is responsible for increased robustness devices have higher breakdown voltage ratings. Implications circuit design show using 3300-V MOSFET provides...
Experimental heavy-ion responses of silicon carbide (SiC) junction barrier Schottky (JBS) diodes are presented. Measured data indicate that heavy ions having range less than the epitaxial thickness do not cause degradation or catastrophic failure, even with device biased above rated breakdown voltage. also when have longer layer thickness, devices exhibit as single-event leakage current (SELC), well burnout (SEB) at biases half Device failure was observed irradiating high-energy long ranges,...
Generally good agreement is obtained between the single-event output voltage transient waveforms by exposing individual circuit elements of a bipolar comparator and operational amplifier to an ion microbeam, pulsed laser beam, simulations using SPICE. The achieved adjusting amounts charge deposited or injected in SPICE simulations. implications for radiation hardness assurance are discussed.
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, Monte Carlo radiation transport simulations secondary particle production. The agree well with data useful understanding the mechanisms data.
The experimental data presented in this paper indicate that the doping and geometry of critical transistors are primary factors affect proton responses LM124 LM148 operational amplifiers. also reveal electrical these circuits their input to combined effects displacement damage defects introduced by ionizing radiation nonlinear. Analysis, supported device simulation, shows shifts parameters (surface potentials, carrier concentrations, etc.) caused buildup oxide interfacial recombination rate...
In this work, the characteristics of single-event transient (SET) generation and propagation are analyzed in a digital phase-locked loop (DPLL) circuit, designed to achieve speeds applicable mixed-signal RF operations. The analysis shows that sensitivity DPLL system is strongly dependent on which its modules subjected ionizing radiation. Computer simulations transients phase-frequency detector module voltage-controlled oscillator indicate their radiation responses have negligible impact...
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates space estimated for 1200 V devices based on the experimental data and expected linear energy transfer (LET) spectrum space.
We analyze single-event transient (SET) effects in a high-speed voltage-controlled oscillator (VCO) design that is applicable to mixed-signal RF operations. Our study shows the sensitivity of this type circuit topologies exhibits strong correlation to: minimum feature size technology use, range oscillating frequencies designed achieve and frequency at which VCO operating. also determine current-starved VCOs have an optimal functional for improved radiation tolerance, located upper segment...
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating parts. This demonstrated experimentally for devices from multiple manufacturers with ratings 600 1700 V. Using a device higher breakdown than required application does provide increased robustness related degradation, compared using lower rating.
A two-photon absorption technique is used to understand the mechanisms of single-event effects (SEEs) in silicon carbide power metal-oxide-field-effect transistors (MOSFETs) and junction barrier Schottky diodes. The MOSFETs diodes have similar structures enabling identification associated specifically with parasitic bipolar structure that present MOSFETs, but not collected charge varies only laser depth, whereas it depth lateral position MOSFETs. Optical simulations demonstrate variations...
Parasitic elements can play an important role in the single-event transient sensitivity of a circuit. This work describes how parasitics affect simulation response linear circuits and shows have been identified using pulsed laser.
The critical charge for single-event transients (SETS) from heavy ions has been simulated and measured in bipolar linear circuits under several bias conditions. Although many cases the threshold energy transfer is less than 2 MeV-cm/sup 2//mg, minimum of order 0.3-1 pC.
Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented analyzed. The discrete structure of FinFETs introduces unique geometrical orientation dependences angular SE (SEU) responses FinFET circuits. Geometric analyses 3-D technology computer-aided design results effectively explain the behind experimentally observed cross-sectional responses. Results show that SEU characteristics can be attributed to...
The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices wider fins collect more charge in both environments. Quantum-well structures confine collection the channel, determine sensitive volume. Simulations show that density produced by irradiation similar for devices widths, but collected due to larger channel Charge accumulated buffer substrate layers modulates body potential, altering degree back-gate...
Single-event burnout and single-event leakage current behavior of 1200 V 3300 silicon carbide power devices are analyzed based on heavy-ion irradiation tests. Both (SEB) (SELC) degradation thresholds improved in the by at least 300 compared to devices. Additionally, it was demonstrated that measured SEB threshold is a strong function device bias history, steps intermediate voltages between charge collection region can result parametric failure from accumulated rather than catastrophic burnout.
This work presents the development of a transistor-level circuit model LM124 operational amplifier specifically engineered and calibrated for analog single-event transient (ASET) computer simulations. The techniques presented rely heavily on datasheet specifications electrical parameterization experimental laser probing dc calibration. resulting proves to be suitable broad-beam SET predictions fault diagnostics space applications.