A5100379239- Radiation Effects in Electronics
- VLSI and Analog Circuit Testing
- Low-power high-performance VLSI design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design
- Advancements in PLL and VCO Technologies
- Advanced MEMS and NEMS Technologies
- Mechanical and Optical Resonators
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Detection and Scintillator Technologies
- Microwave Engineering and Waveguides
- Acoustic Wave Resonator Technologies
- Advanced Fiber Optic Sensors
- Analog and Mixed-Signal Circuit Design
- Electrostatic Discharge in Electronics
- Physical Unclonable Functions (PUFs) and Hardware Security
- 3D IC and TSV technologies
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Smart Grid and Power Systems
- Machine Learning in Bioinformatics
- Advanced Fiber Laser Technologies
- Electromagnetic Compatibility and Noise Suppression
University of Saskatchewan
2016-2025
Beijing Academy of Quantum Information Sciences
2024
Tongji University
2020-2024
University of Science and Technology of China
2022-2024
Zhejiang Energy Group (China)
2024
China Southern Power Grid (China)
2023-2024
University of Electronic Science and Technology of China
2023
Suzhou Vocational Institute of Industrial Technology
2023
Hubei Normal University
2023
China Electric Power Research Institute
2020-2023
In this paper, we present a silicon carbide MEMS resonant strain sensor for harsh environment applications. The is balanced-mass double-ended tuning fork (BDETF) fabricated from 3C-SiC deposited on substrate. SiC was etched in plasma etch chamber using oxide mask, achieving selectivity of 5:1 and rate 2500 Aring/min. device resonates at atmospheric pressure operates room temperature to above 300degC. also subjected 10 000 g shock (out-of-plane) without damage or shift frequency. BDETF...
Deep learning is a multilayer neural network algorithm which emerged in recent years. It has brought new wave to machine learning, and making artificial intelligence human-computer interaction advance with big strides. We applied deep handwritten character recognition, explored the two mainstream of learning: Convolutional Neural Network (CNN) Belief NetWork (DBN). conduct performance evaluation for CNN DBN on MNIST database real-world database. The classification accuracy rate 99.28% 98.12%...
This letter presents a novel ultra-wideband (UWB) band-pass filter (BPF) with dual sharply rejected notch-bands based on simplified composite right/left-handed (SCRLH) resonator. The basic UWB BPF is comprised of four folded shunt quarter-wavelength short-circuited stubs separated by connecting lines length λ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</i> 0/4 and 0/2, respectively. SCRLH resonator studied employed to introduce the notched...
Low- and high-energy proton experimental data error rate predictions are presented for many bulk Si SOI circuits from the 20-90 nm technology nodes to quantify how much low-energy protons (LEPs) can contribute total on-orbit single-event upset (SEU) rate. Every effort was made predict LEP rates that conservatively high; even secondary generated in spacecraft shielding have been included analysis. Across all environments investigated, when operating within 10% of nominal voltage, LEPs were...
Measuring single-event transient (SET) pulse widths is critical for developing proper mitigation schemes to effects (SEE), especially advanced technologies. This paper presents a test chip design implementing techniques measuring SETs implemented in 28 nm Ultra-Thin Body and Box (UTBB) FDSOI technology. Experimental results of heavy ion Co-60 irradiation experiments are presented. The confirm that this technology has very low SEE sensitivity. Laser show distortion (broadening) plays key role...
A flip-flop circuit hardened against soft errors is presented in this paper. This design an improved version of Quatro for further enhanced soft-error resilience by integrating the guard-gate technique. The proposed design, as well reference and regular flip-flops, was implemented manufactured a 65-nm CMOS bulk technology. Experimental characterization results their alpha heavy ions rates verified superior hardening performance over other two circuits.
A very sensitive multi-channel refractive index-based biosensor with a detection range of 1.26 to 1.36 has been proposed. Titanium oxide (TiO2) was utilized as the dielectric, and gold plasmonic material in sensor. The suggested sensor achieved maximum sensitivity value 48,000 nm/RIU 7220 RIU-1 using wavelength amplitude interrogation techniques pitch layer variation 5.55–5.95 μm metal 30–50 nm. can detect many compounds amazing sensitivity, such glucose, sucrose, ethanol, methanol, human...
Single event upsets (SEUs) are a critical concern for reliability in semiconductor devices, particularly as technology nodes shrink and devices become more susceptible to cosmic rays other radiation sources. Understanding mitigating these effects crucial ensuring the of electronic systems. By leveraging pulsed laser charge injection, researchers can achieve results comparable traditional methods like heavy ion testing but at lower cost with better control over spatial temporal parameters....
The traditional molecular-based identification (TMID) technique of new infections from genome sequences (GSs) has made significant contributions so far. However, due to the sensitive nature medical data, TMID transferring patient's data central machine or server may create severe privacy and security issues. In recent years, progression deep federated learning (DFL) its remarkable success in many domains guided as a potential solution this field. Therefore, we proposed dependable...
Heavy-ion experiments on spatially isolated inverters and densely populated demonstrate the effects of transistor density single-event (SE) transients in bulk CMOS. Increased reduces SE cross section dramatically while having little impact transient pulse width.
This paper presents an SEU-tolerant Dual Interlocked Storage Cell (DICE) latch design with both PMOS and NMOS transistors in the feedback paths. The improve SEU tolerance by increasing loop delay during hold mode. was implemented a shift register fashion at 130-nm bulk CMOS process node. Exposures to heavy-ions exhibited significantly higher upset LET threshold lower cross-section compared traditional DICE design. Performance penalties terms of write delay, power, area are non-significant
In this paper, a variety of flip-flop (FF) designs fabricated in commercial 28-nm Fully-Depleted Silicon on Insulator (FDSOI) technology are evaluated for their single-event upset performance with ions and pulsed laser experiments. These FF consist unhardened DFF, hardened DFF stacked transistors the inverters, layout-optimized DFFs. DFFs were exposed to alpha particles heavy (HIs). None exhibit any errors up Linear Energy Transfer (LET) 50 MeV*cm <sup...
This manuscript introduces a highly sensitive dual-core photonic crystal fiber (PCF) based multi-analyte surface plasmon resonance (SPR) sensor, possessing the ability to detect multiple analytes at once. A chemically stable thin plasmonic substance of gold (Au) layer, holding thickness 30 nm, is employed outer portion stated design that manifests negative real permittivity. Moreover, an ultra-thin film aluminum oxide (Al
The widespread impact of thyroid disease and its diagnosis is a challenging task for healthcare experts. conventional technique predicting such vital complex time-consuming. A data-driven approach may offer predictive solutions, but it relies on all relevant attributes, which are computationally expensive. Hence, we propose novel machine learning (ML) based prediction system that could potentially predict by considering three crucial steps. First, to reduce the dimension dataset, feature...
Soft Error Rates (SER) of hardened and unhardened SRAM cells need to be experimentally characterized determine their appropriate applications in radiation environments. This characterization is especially important when low supply voltage preferred. In this paper, we developed an test chip with four cell arrays including two types (standard 6T subthreshold 10T) (Quatro DICE). was fabricated a 65 nm bulk technology irradiated by heavy ions at different voltages. Experimental results show that...
The change in the relative phase between two light fields serves as a basic principle for measurement of physical quantity that guides this change. It would therefore be highly advantageous if could amplified to enhance resolution. One well-known method amplification involves use multi-photon number and path-entangled state known NOON state; however, high-number is very difficult prepare sensitive optical losses. Here we propose experimentally demonstrate amplifier scheme with assistance...
This paper proposes a blind image deconvolution scheme based on soft integration of parametric blur structures. Conventional methods encounter difficult dilemma either imposing stringent and inflexible preconditions the problem formulation or experiencing poor restoration results due to lack information. attempts address this issue by assessing relevance information, incorporating knowledge into double regularization (PDR) scheme. The PDR method assumes that actual satisfies up certain...