We present a circuit-compatible compact model of the intrinsic capacitances GFETs. Together with drain current model, large-signal is developed combining both models as tool for simulating electrical behavior graphene-based integrated circuits, dealing dc, transient behavior, and frequency response circuit. The based on drift-diffusion mechanism carrier transport coupled an appropriate field-effect approach. capacitance consists 16-capacitance matrix including self-capacitances...

Atomic migration from metallic contacts, and subsequent filament formation, is recognised as a prevailing mechanism leading to resistive switching in memristors based on two-dimensional materials (2DMs). This study presents detailed atomistic examination of the different metal atoms across grain boundaries (GBs) 2DMs, employing Density Functional Theory conjunction with Non-Equilibrium Green's Function transport simulations. Various types atoms, Au, Cu, Al, Ni, Ag, are examined, focusing...

Abstract Ambipolar conductance in graphene field-effect transistors (GFETs), and particular their quasi-quadratic I–V transfer characteristic, makes these devices excellent candidates for exploiting subharmonic mixing at high frequencies. Several realizations have already demonstrated the ability of GFETs to compete with, or even improve, state-of-the-art mixers based on traditional technologies. Nonetheless, a systematic analysis influence performance both circuit design technological...

This paper presents a circuit performance benchmarking using the large-signal model of graphene FET reported in Part I this two-part paper. To test model, it has been implemented simulator. In particular, we have simulated high-frequency amplifier, together with other circuits that take advantage ambipolarity graphene, such as frequency doubler, an RF subharmonic mixer, and multiplier phase detector. A variety simulations comprising dc, transient dynamics, Bode diagram, S parameters, power...

We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists graphene field-effect transistor (GFET) used in common source amplifier configuration. RF signal is controlled by exploiting quantum capacitance and its dependence on terminal biases. In particular, independently tuning applied gate-to-source drain-to-source biases, we observe that signal, super-high frequency band, can be varied nearly 200...

A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device levels. In this context, explicit exact analytical expressions main radio-frequency figures merit these devices are given. Moreover, a direct parameter extraction methodology provided on S-parameter measurements. addition intrinsic capacitances, transconductance...

A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises analytical description electrostatics including charge density in 2D semiconductor, site-binding modeling barrier oxide surface charge, and Stern layer plus an ion-permeable membrane, all coupled with carrier transport inside biosensor solved by making use Donnan potential membrane formed charged macromolecules. This account for main...

Abstract The research of two-dimensional (2D) Tellurium (Te) or tellurene is thriving to address current challenges in emerging thin-film electronic and optoelectronic devices. However, the study 2D-Te-based devices for high-frequency applications still lacking literature. This work presents a comprehensive two types radio frequency (RF) diodes based on 2D-Te flakes exploits their distinct properties RF applications. First, metal-insulator-semiconductor (MIS) structure employed as nonlinear...

Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing technique graphene field-effect transistors (GFET) terms their radio frequency (RF) performance. For such a purpose, drift-diffusion self-consistent simulator is prepared to get GFET electrical characteristics. Both mobility and saturation velocity information are obtained by means an ensemble Monte Carlo upon considering relevant scattering...

The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most such were proposed for photonics and radiofrequency applications. In this work, we present a unique technology graphene-on-silicon heterostructures their properties as solution-gated transistors. graphene-on-Silicon field-effect transistors (GoSFETs) fabricated exploiting various conformations drain-source regions doping channel material dimensions. electrically...

We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving Poisson equation including Site-Binding and Gouy-Chapman-Stern approach, while carrier transport described drift-diffusion theory. proposed provided in an analytical form then implemented Verilog-A, making it compatible with standard technology computer-aided design...

Two-dimensional materials, in particular transition metal dichalcogenides (TMDs), have attracted a nascent interest the implementation of memristive architectures. In addition to being functionally similar synapses, their nanoscale footprint promises achieve high density biological neural network context neuromorphic computing. However, order advance from current exploratory phase and reach reliable sound performances, an understanding underlying physical mechanisms TMD memristors seems...

The quality of graphene in nanodevices has increased hugely thanks to the use hexagonal boron nitride as a supporting layer. This paper studies which extent hBN together with channel length scaling can be exploited field effect transistors (GFETs) get competitive radio frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for relevant scattering mechanisms (intrinsic phonons, impurities defects, etc.)....

We have investigated the non-quasi-static (NQS) effects in graphene field-effect transistors (GFETs), which are relevant for GFET operation at high frequencies as a result of significant carrier inertia. A small-signal NQS model is derived from analytical solution drift-diffusion equation coupled with continuity equation, can be expressed terms modified Bessel functions first kind. The conveniently simplified to provide an equivalent circuit lumped elements ready used standard simulators....

Run-time device-level reconfigurability has the potential to boost performance and functionality of numerous circuits beyond limits imposed by integration density. The key ingredient for implementation reconfigurable electronics lies in ambipolarity, which is easily accessible a substantial number two-dimensional materials, either contact engineering or architecture design. In this work, we showcase graphene as an optimal solution implement high-frequency electronics. We propose analyze...

We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response the first time. The essentially consists voltage-dependent diode intrinsic capacitance coupled with static current source, latter accounts vertical electron transport from/towards graphene, which has been modeled by means Dirac-thermionic theory through insulator barrier. Importantly, image force effect found to play key role in determining barrier...

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations designing graphene {field-effect} transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, role access regions these devices. \mbox{Here, we analyse} detail, via numerical simulations, how GFET...

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions the drain current, terminal charges and intrinsic capacitances. The current is on drift-diffusion mechanism carrier transport considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. charge capacitance models are calculated adopting Ward-Dutton linear partition scheme that guarantees...

Abstract Due to the high carrier mobility, graphene is considered a promising material for use in high-speed electronic devices post-silicon era. Graphene resistance radiation and extreme temperatures makes development of graphene-based electronics key-enabling technology aerospace, defence, aeronautical applications. Nevertheless, achieving uniform device-to-device performance still challenge, these fields require reliability components. In particular, many critical issues remain be solved,...

Abstract The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets charge neutrality condition in channel, thus resulting minimum conductivity. Controlling its dependence on terminal biases is crucial design and optimization radio-frequency applications based multiple GFETs. However, previous analysis such carried out single devices uncomplete if not properly understood could result circuit designs with poor performance. control point shift (DPS)...