The search and investigation of resistive switching materials, the most consolidated form solid-state memristors, has become one fastest growing areas in field electronics. This is not only due to huge commercial interest developing so-called Resistive Random-Access Memories (ReRAMs) but also because materials are gathering way new forms analog computation. Unlike traditional electronics technologies, where Silicon monopolized applications, area memristors opened a broad set candidates that...

Abstract Ambipolar conductance in graphene field-effect transistors (GFETs), and particular their quasi-quadratic I–V transfer characteristic, makes these devices excellent candidates for exploiting subharmonic mixing at high frequencies. Several realizations have already demonstrated the ability of GFETs to compete with, or even improve, state-of-the-art mixers based on traditional technologies. Nonetheless, a systematic analysis influence performance both circuit design technological...

We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists graphene field-effect transistor (GFET) used in common source amplifier configuration. RF signal is controlled by exploiting quantum capacitance and its dependence on terminal biases. In particular, independently tuning applied gate-to-source drain-to-source biases, we observe that signal, super-high frequency band, can be varied nearly 200...

A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises analytical description electrostatics including charge density in 2D semiconductor, site-binding modeling barrier oxide surface charge, and Stern layer plus an ion-permeable membrane, all coupled with carrier transport inside biosensor solved by making use Donnan potential membrane formed charged macromolecules. This account for main...

The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most such were proposed for photonics and radiofrequency applications. In this work, we present a unique technology graphene-on-silicon heterostructures their properties as solution-gated transistors. graphene-on-Silicon field-effect transistors (GoSFETs) fabricated exploiting various conformations drain-source regions doping channel material dimensions. electrically...

We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving Poisson equation including Site-Binding and Gouy-Chapman-Stern approach, while carrier transport described drift-diffusion theory. proposed provided in an analytical form then implemented Verilog-A, making it compatible with standard technology computer-aided design...

Abstract The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets charge neutrality condition in channel, thus resulting minimum conductivity. Controlling its dependence on terminal biases is crucial design and optimization radio-frequency applications based multiple GFETs. However, previous analysis such carried out single devices uncomplete if not properly understood could result circuit designs with poor performance. control point shift (DPS)...

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order boost their adoption, the availability of numerical tools physically-based models able support experimental activities provide them with useful guidelines becomes essential. In this context, we propose theoretical approach that combines simulations small-signal modeling analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into...

Two-dimensional material (2DM)-based Field-Effect Transistors (FETs) have been postulated as a solid alternative for biosensing applications thanks to: (i) the possibility to enable chemical sensitivity by functionalization, (ii) an atomically thin active area which guarantees optimal electrostatic coupling between sensing layer and electronic region, (iii) their compatibility with large scale fabrication techniques. Although 2DM-based BioFETs demonstrated notable capabilities, other...

Periodically loaded transmission lines are characterized by a frequency response with regular pass and stopbands. Interestingly, each of the passbands exhibits peculiar comb-alike behavior, in which again, nested (or internal) stopbands can be identified. In this work, we focus our attention on effect that changing characteristics periodic load (which is varactor capacitance case) has structure, providing novel detailed analysis such bands. The control structure when properties allows to...

We present a physics-based device-to-circuit modeling approach to metal - insulator 2D material based field-effect transistors (2DFETs). Starting from numerical simulations on the self-consistent solution of Poisson and 1D Drift-Diffusion equations, we obtain electrostatics current-voltage characteristics such devices. Then, assuming small-signal operation, charge-based equivalent circuit is fed with parameters computed results then it implemented in standard simulator. This framework...

Appears in: INTED2023 Proceedings Publication year: 2023Page: 6802 (abstract only)ISBN: 978-84-09-49026-4ISSN: 2340-1079doi: 10.21125/inted.2023.1834Conference name: 17th International Technology, Education and Development ConferenceDates: 6-8 March, 2023Location: Valencia, Spain

E.G. Marin A. Toral-LopezJ. Cuesta-LopezA. Medina-RullF. RuizA. GodoyJ. BanqueriS. CuadrosM.C. FernandezF. Pasadas

FAST AND AUTOMATIC FABRICATION OF RADIOFREQUENCY CIRCUITS FOR FUTURE ELECTRONIC TELECOMMUNICATION ENGINEERS

NON-LINEAR MICROWAVE DEVICE CHARACTERIZATION: A STEP FORWARD FROM S-PARAMETERS IN GRADUATE AND UNDERGRADUATE ENGINEERING TEACHING

This work numerically evaluates the impact of surface chemical reactions on performance 2D-FET based pH sensors. More precisely, we focus adsorption chlorine ions and expulsion protons at sensing interface FET analysis is performed through numerical simulations encompassing modelling both semiconductor device liquid solution to be analysed. In region 2D Poisson - 1D Continuity equations are self-consistently solved, while in electrolyte deal with modified Boltzmann system [1]. The simulator...

Appears in: ICERI2022 Proceedings Publication year: 2022Page: 5437 (abstract only)ISBN: 978-84-09-45476-1ISSN: 2340-1095doi: 10.21125/iceri.2022.1324Conference name: 15th annual International Conference of Education, Research and InnovationDates: 7-9 November, 2022Location: Seville, Spain

Appears in: ICERI2022 Proceedings Publication year: 2022Page: 4717 (abstract only)ISBN: 978-84-09-45476-1ISSN: 2340-1095doi: 10.21125/iceri.2022.1134Conference name: 15th annual International Conference of Education, Research and InnovationDates: 7-9 November, 2022Location: Seville, Spain

A detailed design of a radio-frequency (RF) system that leverages the graphene quantum capacitance for phase shifting is presented. It consists in periodic replication transmission line (TL) loaded with bias-tunable capacitor (varactor) which implemented exploiting state-of-the-art metal-insulator-graphene-metal (MIGM) heterostructure. The resulting distributed able to scale (by extending number TL+MIGM stages) specific targeted application. In particular, 10-stage shifter (operating at 3...

In this article it iimplemented a set of circuit models to be exploited in conventional simulators used engineering degrees. The capture the physics graphene-based transistors, characterized by ambipolar conduction, and its resulting V-shaped transfer characteristics (current vs. gate voltage). These can students explore electronics opening possibility 1) redesigning simplifying circuits; 2)seeking new functionalities both analogue/RF digital domains. thisregard, as an example just...