A5040175732- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Metal and Thin Film Mechanics
- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
Pennsylvania State University
2018-2022
Conformally coating textured, high surface area substrates with quality semiconductors is challenging. Here, we show that a pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types flexible fabrics (cotton, carbon, steel) electronically or optoelectronically active materials. The (∼30 MPa) significantly increases rate at low temperatures. As result, it becomes possible deposit technologically important hydrogenated amorphous...
This article reports GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.75~\Omega ~ \cdot ~mm$ </tex-math></inline-formula> , avoiding the risk abnormally high caused by inaccurate etch depth control. A pGaN notch formed...
Molybdenum carbonitride films prepared by plasma enhanced atomic layer deposition were studied for use as Schottky contacts to n-type gallium nitride. Deposited using bis(tertbutylimino)bis(dimethylamino)molybdenum and a remote N2/H2 plasma, the diodes capped with Ti/Au displayed excellent rectifying behavior barrier height of 0.87 ± 0.01 eV an ideality factor 1.02 after annealing at 600 °C in N2. These characteristics surpass those pure metal nitride diodes, possibly due work function...
Germanium telluride (GeTe) is a phase change material (PCM) that has gained recent attention because of its incorporation as an active for radio frequency (RF) switches, well memory and novel optoelectronic devices. Considering PCM-based RF parasitic resistances from Ohmic contacts can be limiting factor in device performance. Reduction the contact resistance ( Rc) therefore critical reducing on-state to meet requirements high-frequency applications. To engineer Schottky barrier between...
Hydrobromic acid (HBr) vapor was used to remove native oxide from an undoped (100) germanium (Ge) wafer with n-type conductivity and passivate its surface against reoxidation. The Ge surfaces, examined by x-ray photoelectron spectroscopy, were suspended above a 48% HBr solution for 1, 10, 20, 60 min, 24 h. A steady decrease in thickness observed up min of exposure time. Beyond this time, little or no difference observed, the wafers maintained subnanometer levels oxidation. stability...
Although silicon (Si) currently dominates the semiconductor industry, its small 1.1 eV band gap limits maximum operating temperature, which restricts use in high-temperature, high-power devices. Gallium nitride (GaN) is an attractive with wide bandgap (3.4 eV), high electron mobility (1700 cm 2 /Vs), saturation velocity (3 x 10 7 cm/s), large critical breakdown field (2 MV/cm), and thermal stability. The capabilities of GaN allow for a reduction device size, can conserve physical space if...