A5011367703- Photonic Crystals and Applications
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Optical Coatings and Gratings
- Ga2O3 and related materials
- Advanced Photocatalysis Techniques
- Thermal Radiation and Cooling Technologies
- Ophthalmology and Visual Impairment Studies
- Plasmonic and Surface Plasmon Research
- Intraocular Surgery and Lenses
- Semiconductor Quantum Structures and Devices
- Spacecraft Design and Technology
- Corneal surgery and disorders
The University of Texas at Arlington
2018-2024
Stanford University
2021
University of New Mexico
2021
United States Air Force Research Laboratory
2021
Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and reflective layer are demonstrated. In addition to description transport mechanism that allows injection from into wide bandgap device, details LED structure which take advantage enhance light extraction efficiency (LEE) elaborated. Fabricated LEDs were characterized electrically optically. Owing efficient enhanced LEE...
Since the initial proposal in 1999 by Noda <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">et al.</i> , photonic crystal surface emitting lasers (PCSELs) have shown to achieve large area, coherent lasing with a narrow, single mode beam. Owing their unique orthogonal electrical/optical cavity scheme, PCSELs emerged as one of most promising platforms for high power diode lasers. In this paper, we report performance trade-offs and challenges...
β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. based ultraviolet photodetectors have been the subject of active research last few years. However, no micro nanostructure surface texturing has demonstrated efficient light management in optoelectronic applications yet. We hereby present nanoscale groove textured metal-semiconductor-metal photodiodes, enabled by unique metal-assisted chemical etching...
We show that the threshold of a photonic crystal surface-emitting laser can be calculated from first-principles by method rigorous coupled wave analysis (RCWA), which has been widely used to simulate response spectra passive periodic structures. Here, scattering matrix (S-matrix) structure with added gain is on complex frequency plane using RCWA, and lasing determined value for pole S-matrix reaches real axis. This approach surface emitting structures in general particularly useful those in-plane
Herein, the fabrication of InP photonic‐crystal surface‐emitting lasers (PCSELs) using a buried airhole/InP (PC) layer based on an epitaxial regrowth process is reported. The formation PC voids in crystal structure requires precise tuning metal‐organic vapor‐phase epitaxy (MOVPE) growth parameters, where evolution function temperature, V/III ratio, and rate. With control these it possible to alter airhole shape from complete infilling perfect encapsulation. Low‐threshold lasing demonstrated...
Photonic-crystal surface-emitting lasers (PCSELs) have shown promise for large-area single-mode lasers. However, the difficulty in increasing PCSEL area while preserving operation has hindered progress of achieving ultralarge-area PCSELs. The physical origin scaling challenge lies diminishing quality-factor (Q) contrast between fundamental mode and higher-order modes as lateral size crystal increases. Here, we show that existence bound states continuum (BIC) can overcome this challenge....
We investigated two types of threading dislocations in high Al-composition Al0.55Ga0.45N/AlN multiple quantum well (MQW) structures grown on AlN substrate for electrically injected deep ultraviolet light-emitting diodes (LEDs). The surface morphology and defects electrical characteristics the MQW LED were examined via conductive atomic force microscopy (CAFM). found that disparity between photoluminescence (PL) electroluminescence (EL) spectra terms light emission output wavelength shift are...
Photonic crystal slabs are the state of art in studies for light confinement, optical wave modulating and guiding, as well nonlinear response. Previous have shown abundant real-world implementations photonic crystals planar optics, metamaterials, sensors, lasers. Here, we report a novel full 2{\pi} phase control method reflected beam over interaction with resonant mode, verified by temporal coupled-mode analysis S-parameter simulations. Enhanced asymmetric coupling output ports, shift can be...
We show that by using a perturbed photonic Dirac-cone, one can realize an ultra-narrow and finite Q-factor peak in the wavevector space, with both value width separately tunable. also discuss lower bound minimal viable given Q-value while maintaining sufficient Q differentiation among modes. The strong angular frequency Q-selection finds applications optical devices where angle- frequency-selections are needed.
Epitaxial regrowth is used to fabricate QD-PCSELs. Three layers of InAs dots-in-well are as the active region. Device results from an optically pumped QD-PCSEL with emission wavelength 1200 nm presented.
We report optically pumped 1 μm low threshold GaAs photonic crystal surface emitting lasers. The is etched on 3-period InGaAs/AlGaAs MQW heterostructure. A laser peak achieved at 1,006 nm with a linewidth of 0.6 5 kW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> power density.
We report Watt-level high power photonic crystal surface emitting lasers with regrowth and flip-chip bonding processes. The impacts of the cavity resonance detuning scheme on lasing performance will be discussed for increased optical reduced threshold current.
We report here an optically pumped deep UV edge emitting laser with AlGaN MQWs active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21- period Al<sub>0.53</sub>Ga<sub>0.47</sub>N/Al<sub>0.7</sub>Ga<sub>0.3</sub>N structure was using 193 nm Excimer source. A peak achieved from the cleaved facets at 280.3 linewidth of 0.08 room temperature threshold power density 320 kW/cm<sup>2</sup>. emission is predominantly TE...
Epitaxial regrowth is investigated as a method of PCSEL fabrication and compared to non-regrowth methods. The influence photonic crystal morphology explored optically pumped electrically injected devices are demonstrated.
We report frequency response characterization for the high-power photonic crystal surface-emitting lasers (PCSELs). Power-bandwidth results our fabricated GaAs 1040 nm are presented and discussed.
Photonic-crystal surface emitting lasers (PCSELs) exhibit several unique features compared to conventional vertical cavity surface-emitting (VCSEL) including scalability, high power, and beam quality. They are promising candidates in power-demanding applications such as free-space sensing. Motivated by the experimental advances, there have been significant efforts developing simulation tools for PCSELs. In particular, a coupled mode theory (CWT) model PCSEL was developed, which provides...
Molecular Beam Epitaxy (MBE) is used for fabrication of Photonic Crystal Surface Emitting Lasers (PCSELs). Two methods PCSEL are explored and compared: epitaxial regrowth non-regrowth. Optically pumped electrically injected devices demonstrated by regrowth.
We report the intrinsic linewidth in a photonic crystal surface-emitting laser diode. An of 330 kHz was obtained without any optical feedback, one order smaller than value DFB lasers. The impact cavity feedback on also characterized.