A5072960505- Advanced Sensor and Energy Harvesting Materials
- Photonic and Optical Devices
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- ZnO doping and properties
- Photonic Crystals and Applications
- Advanced Materials and Mechanics
- Ga2O3 and related materials
- Thin-Film Transistor Technologies
- Semiconductor Lasers and Optical Devices
- Diamond and Carbon-based Materials Research
- Advanced MEMS and NEMS Technologies
- Optical Coatings and Gratings
- Advanced Photocatalysis Techniques
- GaN-based semiconductor devices and materials
- Electronic and Structural Properties of Oxides
- Metal and Thin Film Mechanics
- Conducting polymers and applications
- Nanofabrication and Lithography Techniques
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- Organic Electronics and Photovoltaics
- 2D Materials and Applications
- Graphene research and applications
- Nanomaterials and Printing Technologies
University at Buffalo, State University of New York
2017-2023
Nanyang Technological University
2022
Applied Materials (United States)
2022
Michigan State University
2022
Fraunhofer USA
2022
Buffalo BioLabs
2017-2021
State University of New York
2020-2021
University of Wisconsin–Madison
2010-2019
Korea University
2007-2019
South China University of Technology
2019
Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications.
Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based with high-spatial resolution into format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations...
Materials, device designs and manufacturing approaches are presented for classes of RF electronic components that capable complete dissolution in water or biofluids. All individual passive/active as well system-level examples such wireless energy harvesting circuits exploit active materials biocompatible. The results provide diverse building blocks physically transient forms electronics, particular potential value bioresorbable medical implants with power transmission communication...
Field-effect transistors (FETs) that are stretchable up to 50% without appreciable degradation in performance demonstrated. The FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes (CNTs) as the channel, a flexible ion gel dielectric, and metal electrodes. buckling CNT film enables high degree stretchability while nature allows it maintain quality interface with CNTs during stretching. An excellent on/off ratio >104, field-effect mobility 10...
Abstract To date, the preparation of free-standing 2D nanomaterials has been largely limited to exfoliation van der Waals solids. The lack a robust mechanism for bottom-up synthesis from non-layered materials become an obstacle further explore physical properties and advanced applications nanomaterials. Here we demonstrate that surfactant monolayers can serve as soft templates guiding nucleation growth in large area beyond limitation One- 2-nm-thick, single-crystalline ZnO nanosheets with...
Biodegradable substrates and encapsulating materials play critical roles in the development of an emerging class semiconductor technology, generally referred as “transient electronics”, whose key characteristic is ability to dissolve completely, a controlled manner, upon immersion ground water or biofluids. The results presented here introduce use thin foils Mo, Fe, W, Zn biodegradable silicate spin‐on‐glass (SOG) insulating layers, with demonstrations transient active (diode transistor)...
Through a process of photoelectrochemical (PEC) water splitting, we demonstrated an effective strategy for engineering the barrier height heterogeneous semiconductor interface by piezoelectric polarization, known as piezotronic effect. A consistent enhancement or reduction photocurrent was observed when tensile compressive strains were applied to ZnO anode, respectively. The variation is attributed changed at ZnO/ITO interface, which result remnant potential across due nonideal free charge...
Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this has become difficult in lithography alignment. In full paper, a local alignment scheme combination with more accurate SiNM transfer measures for minimizing errors reported. By 1 μm channel the SiNMs on soft...
Fast flexible electronics operating at radio frequencies (>1 GHz) are more attractive than traditional because of their versatile capabilities, dramatic power savings when reduced speed and broader spectrum applications. Transferrable single-crystalline Si nanomembranes (SiNMs) preferred to other materials for owing unique advantages. Further improvement Si-based device implies significant technical economic While the mobility bulk can be enhanced using strain techniques, implementing these...
Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at AlGaN/GaN interface have gained prominence as high sensitivity ultraviolet (UV) PDs due to their excellent optoelectronic performance. However, most 2DEG-IPDs been built rigid substrates, thus limiting use of in flexible and wearable applications. In this paper, we demonstrated performance using 2DEG heterostructure membranes created from 8 in. insulator (AlGaN/GaNOI) substrates. The interdigitated has...
Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy tailoring the performance of nanodevices. ZnO NWs grown by hydrothermal method are pervasively used in optoelectronic, photovoltaic, piezoelectric energy-harvesting devices. We synthesized situ Cl-doped with metallic conductivity that would fit seamlessly these devices improve performance. Possible Cl doping mechanisms were discussed. UV–visible absorption spectroscopy confirmed...
Abstract A systematic review, covering the aspects of material preparation, device fabrication and process integration, is provided for flexible electronics operating in high-frequency domain based on transferrable monocrystalline silicon (Si) nanomembranes (NM). Previously demonstrated methods releasing Si NM from silicon-on-insulator source substrates transferring it to are briefly described. Due processing temperature limitation most substrates, a pre-release selective doping scheme used...
In this work, flexible phototransistors with a back gate configuration based on transferrable single‐crystalline Si nanomembrane (Si NM) have been demonstrated. Having the NM as top layer enables full exposure of active region to an incident light and thus allows for effective sensing. Flexible are performed in two operation modes: 1) high detection mode that exhibits photo‐to‐dark current ratio 10 5 at voltage bias V GS < 0.5 V, DS = 50 mV 2) responsivity shows maximum 52 A W −1 under...
We report ultra-compact surface-normal high-Q optical filters based on single- and double-layer stacked Fano resonance photonic crystal slabs both Si quartz substrates. A single layer filter was designed a Q factor of 1,737 obtained with 23 dB extinction ratio. With configuration, the can increase to over 10,000,000 in design. Double-layer quality 9,734 ratio 8 were experimentally demonstrated, for design target 22,000.
A much-simplified method of making flexible GaN blue light-emitting diode (LED) array on a plastic substrate was demonstrated. sticky elastomeric stamp first brought into contact with prefabricated LED sapphire substrate. Laser liftoff applied by shining laser light through the The released sitting transferred to polyethylene terephthalate that coated an adhesive layer finish fabrication process. Careful investigation built-in stress in using Raman spectroscopy revealed maximum allows for...
Epidermal electronic systems feature physical properties that approximate those of the skin, to enable intimate, long-lived skin interfaces for physiological measurements, human-machine and other applications cannot be addressed by wearable hardware is commercially available today. A primary challenge power supply; bulk, large mass high mechanical modulus associated with conventional battery technologies can hinder efforts achieve epidermal characteristics, near-field transfer schemes offer...
Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and reflective layer are demonstrated. In addition to description transport mechanism that allows injection from into wide bandgap device, details LED structure which take advantage enhance light extraction efficiency (LEE) elaborated. Fabricated LEDs were characterized electrically optically. Owing efficient enhanced LEE...
AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of native substrate. Following epitaxy, a p-Si layer is bonded heterostructure. LEDs characterized both electrically optically. Owing defect films, large concentration holes from p-Si,...
Abstract Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β‐Ga 2 O 3 nanomembranes (NMs). In order to realize SBDs, sub‐micron thick freestanding NMs created from bulk and transfer‐printed onto the via microtransfer printing method. It is revealed that material property of such as crystal structure, electron affinity, bandgap remains unchanged compared with its properties. Flexible SBDs exhibit record critical breakdown...
An aqueous solution-based doping strategy was developed for controlled impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped NWs were successfully synthesized in an solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions solution, soluble precursor (antimony glycolate) formed good NW morphology concentration achieved. A study suggested absorption mechanism. fabricating...
We report that Sb-decorated head-to-head (H–H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows all of the NWs is incorporated into H–H b-IDBs just under (0001) NW growth surfaces bottom facets interior voids. Density functional theory calculations show extra per b-IDB makes them acceptors. containing these defects exhibited...