We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on GeOI architecture. Compared non-photon-trapping counterparts, patterning etching microstructure can be processed in same step mesa structure no additional cost. A four-fold enhancement response µm. Although incorporation...

Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at AlGaN/GaN interface have gained prominence as high sensitivity ultraviolet (UV) PDs due to their excellent optoelectronic performance. However, most 2DEG-IPDs been built rigid substrates, thus limiting use of in flexible and wearable applications. In this paper, we demonstrated performance using 2DEG heterostructure membranes created from 8 in. insulator (AlGaN/GaNOI) substrates. The interdigitated has...

Dark current characteristics of germanium (Ge) vertical p-i-n photodetectors were studied. Ge demonstrated on the germanium-on-insulator (GOI) platforms realized via direct wafer bonding and layer transfer. GOI with two different threading dislocation densities (TDDs) 3.2 × 106 cm−2 (low TDD) 5.2 108 (high varied furnace annealing in oxygen ambient. An ultra-low dark density 1.12 mA/cm2 for epi-Ge was obtained a low TDD photodetector. This is reduced by factor 53 comparison high A dominant...

Nanotransfer printing techniques have attracted significant attention due to their outstanding simplicity, cost-effectiveness, and high throughput. However, conventional methods via a chemical medium hamper the efficient fabrication with large-area uniformity rapid development of electronic photonic devices. Herein, we report direct chemisorption-assisted nanotransfer technique based on nanoscale lower melting effect, which is an enabling technology for two- or three-dimensional...

Abstract Single-photon emitters (SPEs) hold the key to many quantum technologies including computing. In particular, developing a scalable array of identical SPEs can play an important role in preparing single photons – crucial resources for computation at high rate, allowing improve computational capacity. Recently, different types have been found various 2D materials. Towards realizing SPE arrays materials computation, it is required develop tunable that produce by precisely controlling...

Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because planar fabrication technique. In this article, we present design, growth, and characterization GeSn MSM PDs that suitable integrated circuits. The introduction 4% Sn in active region also reduces direct bandgap shows a redshift responsivity spectra, which can extend up to 1800 nm wavelength, means it cover entire telecommunication bands....

Germanium (Ge) vertical p-i-n photodetectors were demonstrated with an ultra-low dark current of 0.57 mA/cm2 at -1 V. A germanium-on-insulator (GOI) platform a 200-mm wafer scale was realized for photodetector fabrication via direct bonding and layer transfer techniques, followed by oxygen annealing in finance. thin germanium-oxide (GeOx) formed on the sidewall ozone oxidation to suppress surface leakage current. The responsivity annealed GOI revealed be 0.42 0.28 A/W 1,500 1,550 nm V,...

A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). photodiodes varying mesa diameters fabricated characterized. An ultralow density of 16.3 mA/cm2 at -1 V achieved as expected due to...

Two-dimensional (2D) materials-based photodetectors in the infrared range hold key to enabling a wide of optoelectronics applications including imaging and optical communications. While there exist 2D materials with narrow bandgap sensitive photons, two-photon absorption (TPA) process can also enable photodetection well-established large bandgaps such as WSe2 MoS2. However, most TPA suffer from low responsivity, preventing this method being widely adopted for photodetection. Herein, we...

The germanium-on-insulator (GOI) has recently emerged as a new platform for complementary metal-oxide-semiconductor (CMOS)-compatible photonic integrated circuits. Here we report on resonant-cavity-enhanced optical responses in Ge photodetectors GOI where conventional photodetection is difficult. A 0.16% tensile strain introduced to the high-quality active layer extend range cover entire of telecommunication C- and L-bands (1530-1620 nm). carefully designed vertical cavity created utilizing...

Abstract The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key realization scalable optical and quantum photonic circuits. Herein, technique is presented produce on‐chip lasers by dynamically controlled strain engineering. By using localized laser annealing that can control in gain medium, emission wavelengths several GeSn one‐dimensional crystal nanobeam are precisely matched whose initial significantly varied. method...

Germanium (Ge)-based photodetectors have become one of the mainstream components in photonic-integrated circuits (PICs). Many emerging PIC applications require to high detectivity and low power consumption. Herein, we demonstrate high-detectivity Ge vertical p-i-n photodiodes on an in-situ heavily arsenic (As)-doped Ge-on-Si platform. The As doping was incorporated during initial seed layer growth. grown film exhibits insignificant up-diffusion dopants. design results a ∼45× reduction dark...

Gourd-shaped hole array germanium (Ge) vertical p-i-n photodiodes were designed and demonstrated on a germanium-on-insulator (GOI) substrate with the excellent responsivity of 0.74 A/W specific detectivity 3.1 × 10 cm·Hz 1/2 /W. It is calculated that gourd-shaped design provides higher optical absorption compared to cylinder-shaped design. As result, external quantum efficiency for photodetector was enhanced by ∼2.5× at 1,550 nm, comparing hole-free photodetectors. In addition, extracted...

Au-hole array and Au-GeSn grating structures were designed incorporated in GeSn metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm. Both plasmonic are beneficial effective optical confinement near the surface due to plasmon resonance (SPR), contributing an responsivity. The responsivity enhancement Au hole-array structure is insensitive polarization direction, while depends on direction. photodetector with has ∼50% reinforcement compared reference...

A highly ordered and damage-free microscale Ge inverted pyramid array is fabricated by HF-free metal-assisted chemical etching. The exhibits significant broadband antireflection properties in the mid-infrared region.

In recent years, Germanium (Ge) photodiodes have established a widespread utilization in photonic-integrated circuits (PICs). However, the devices commonly exhibit prominent dark current due to substantial defects at Ge/Si heteroepitaxial interface. Herein, we demonstrate normal-incidence, buffer-less Ge vertical p-i-n with remarkably low density (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dark</sub> , 0.78 mA/cm <sup...

Near infrared (NIR) photodetectors (PDs) have attracted great attention for their applications in the field of optical telecommunication.

We demonstrate the self-assembly synthesis of millimeter-long guided trenches and microholes/rings in supersaturated GeSn epilayers through two approaches: epitaxial growth engineering thermal annealing treatment. It reveals that ordered originate from a central nucleation point, which are typically accompanied by microhole/ring formation. These caused migration Sn droplets on film surface with orientation dominantly along <100> or <110> axis, determined content formation temperature. The...

In this work, the metal-semiconductor-metal photodetectors were demonstrated on Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.91</sub> Sn xmlns:xlink="http://www.w3.org/1999/xlink">0.09</sub> -on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 2,003 nm, respectively. Through a systematic study, it is revealed that can potentially detect wavelength beyond 2,200 nm. dark current density measured...

Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation density (TDD) in transferred Ge layer, dark current of 0.279 µA was achieved at -1 V. The structure enhances optical absorption by guiding propagation normal incident light, contributing 3× improved responsivity 1,550 nm. Compared structure, not only guides modes but also benefits vertical resonance modes. A 4.5× higher...

A highly ordered microscale Ge inverted pyramid array is fabricated by HF-free metal-assisted chemical etching. Doping in the structure significantly modifies reflection behavior mid-infrared region.

GeSn alloys are a promising emerging complementary metal–oxide–semiconductor compatible technology for applications in photonics and electronics. However, the unavoidable intrinsic compressive strain introduced during epitaxial growth has prevented researchers from pushing performance of devices to limit realizing real-world applications. In this paper, we present straightforward geometric strain-inversion technique that harnesses harmful achieve beneficial tensile nanowires, drastically...

The epitaxial growth of GeSn alloys with Sn content varying from 4 to 11% using digermanium (Ge 2 H 6 ) and tin chloride (SnCl as precursors in a modified Chemical Vapor Deposition (CVD) system under reduced pressure condition is reported. Characterization results consisting atomic force microscope (AFM), secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD), etching pits density (EPD) measurements, raman analysis, ellipsometry analysis high-resolution transmission electron...

Despite having achieved drastically improved lasing characteristics by harnessing tensile strain, the current methods of introducing a sizable strain into GeSn lasers require complex fabrication processes, thus reducing viability for practical applications. The geometric amplification is simple technique that can concentrate residual and small localized large strain. However, not suitable due to intrinsic compressive introduced during conventional epitaxial growth. In this Letter, we...

Abstract Silicon (Si) nanowire (NW) array is a promising light‐trapping platform due to the strong interaction between light and nanostructure. A photodetector benefits from improved optical absorption in Si NW array. Although increases with length, large length not always preferable owing surface area. Herein, systematic study on photodetectors varied lengths investigated. It revealed that 1 µm provide highest responsivity of 0.65 W −1 specific detectivity 1.40 × 10 9 cm Hz 1/2 at...