A5079458167- 2D Materials and Applications
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Solid-state spectroscopy and crystallography
- Molecular Junctions and Nanostructures
- Semiconductor Quantum Structures and Devices
- Graphene research and applications
- Nanowire Synthesis and Applications
- Diamond and Carbon-based Materials Research
- MXene and MAX Phase Materials
- Luminescence Properties of Advanced Materials
- Diverse academic and cultural studies
- Crystal Structures and Properties
- Inorganic Chemistry and Materials
- Advanced Sensor and Energy Harvesting Materials
- Supramolecular Self-Assembly in Materials
Sapienza University of Rome
2022-2025
Abstract Monolayers (MLs) of transition‐metal dichalcogenides host efficient single‐photon emitters (SPEs) usually associated to the presence nanoscale mechanical deformations or strain. Large‐scale spatial control strain would enhance scalability such SPEs and allow for their incorporation into photonic structures. Here, formation regular arrays strained hydrogen‐filled one‐layer‐thick micro‐domes obtained by H‐ion irradiation lithography‐based approaches is reported. Typically, H 2...
Abstract Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, e.g., for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied exciton properties of WSe 2 /MoSe HSs from T = 6 K to room temperature using time-resolved continuous-wave micro-photoluminescence also under a magnetic...
Two-dimensional (2D) heterostructures (HSs) offer unlimited possibilities for playing with layer number, order, and twist angle. The realization of high-performance optoelectronic devices, however, requires the achievement specific band alignments, k-space matching between conduction valence extrema, efficient charge transfer constituent layers. Fine-tuning mechanisms to design ideal HSs are lacking. Here, we show that layer-selective strain engineering can be exploited as an extra degree...
Abstract We present a concise overview of the state affairs in development single-photon sources based on two-dimensional (2D) crystals, focusing particular transition-metal dichalcogenides and hexagonal boron nitride. briefly discuss current level advancement ( i ) our understanding microscopic origin quantum emitters (QEs) identified these two material systems, ii characterisation optical properties emitters; then, we survey main methods developed to enable dynamic control QEs’ emission...
Abstract The possibility of almost linear tuning the band gap and electrical optical properties in monolayers (MLs) semiconducting transition metal dichalcogenide (S-TMD) alloys opens up way to fabricate materials with on-demand characteristics. By making use photoluminescence spectroscopy, we investigate WSSe MLs a S/Se ratio 57/43 deposited on SiO 2 /Si substrate encapsulated hexagonal BN flakes. Similarly ‘ parent ’ WS WSe MLs, assign ML family dark ground exciton state. We find that,...
Semiconductor materials capable of hosting luminescent lanthanide ions (Ln 3+ ) and sensitize their emission are scarce.
Alloying has been a powerful and practical strategy to widen the palette of physical properties available semiconductor materials. Thanks recent advances in synthesis van der Waals semiconductors, this can be extended monolayers (MLs) transition metal dichalcogenides (TMDs). Due their extraordinary flexibility robustness, strain is another means engineer electronic two-dimensional (2D) TMDs. In article, we combine these two approaches an exemplary dichalcogenide chalcogen-alloy, WSSe. Highly...
Two-dimensional crystals stack together through weak van der Waals (vdW) forces, offering unlimited possibilities to play with layer number, order and twist angle in vdW heterostructures (HSs). The realisation of high-performance optoelectronic devices, however, requires the achievement specific band alignments, $k$-space matching between conduction minima valence maxima, as well efficient charge transfer constituent layers. Fine tuning mechanisms design ideal HSs are lacking. Here, we show...
III-V nanowire heterostructures can act as sources of single and entangled photons are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry nanowires allows to integrate lattice-mismatched components beyond the limits planar epilayers create radially axially confined structures. Here, we report plasma-assisted molecular beam epitaxy growth thin GaAs/GaAsN/GaAs core-multishell monolithically integrated on Si (111) substrates, overcoming...
Moir\'{e} excitons (MXs) are electron-hole pairs localised by the periodic (moir\'{e}) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, $e.g.$, for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied exciton properties of a WSe$_2$/MoSe$_2$ HS from $T$=6 K to room temperature using time-resolved continuous-wave micro-photoluminescence, also under magnetic...
The possibility of almost linear tuning the band gap and electrical optical properties in monolayers (MLs) semiconducting transition metal dichalcogenide (S-TMD) alloys opens up way to fabricate materials with on-demand characteristics. By making use photoluminescence spectroscopy, we investigate WSSe MLs a S/Se ratio 57/43 deposited on SiO$_2$/Si substrate encapsulated hexagonal BN flakes. Similarly $"parent"$ WS$_2$ WSe$_2$ MLs, assign ML family dark ground exciton state. We find that,...