Jong Chan Kim

ORCID: 0000-0003-4101-0590
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Graphene research and applications
  • Electronic and Structural Properties of Oxides
  • nanoparticles nucleation surface interactions
  • Aluminum Alloys Composites Properties
  • MXene and MAX Phase Materials
  • ZnO doping and properties
  • Neuroscience and Neural Engineering
  • Copper-based nanomaterials and applications
  • Magnetic and transport properties of perovskites and related materials
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Magnesium Alloys: Properties and Applications
  • Crystallization and Solubility Studies
  • Advancements in Solid Oxide Fuel Cells
  • Machine Learning in Materials Science
  • Organic Light-Emitting Diodes Research
  • Conducting polymers and applications
  • Perovskite Materials and Applications
  • Photoreceptor and optogenetics research
  • Neural Networks and Reservoir Computing
  • Hydrogen Storage and Materials
  • Nanowire Synthesis and Applications

Korea Institute of Robot and Convergence
2024

Ulsan National Institute of Science and Technology
2017-2024

Idaho National Laboratory
2019

Korea Institute of Industrial Technology
2018

Jeonbuk National University
2016

Sungkyunkwan University
2014

LG Chem (South Korea)
2010

Texas A&M University
2005

Pohang University of Science and Technology
2001

University of Utah
1999

The development of energy-efficient artificial synapses capable manifoldly tuning synaptic activities can provide a significant breakthrough toward novel neuromorphic computing technology. Here, new class architecture, three-terminal device consisting vertically integrated monolithic tungsten oxide memristor, and variable-barrier selenide/graphene Schottky diode, termed as 'synaptic barrister,' are reported. implement essential characteristics, such short-term plasticity, long-term...

10.1002/adma.201801447 article EN Advanced Materials 2018-07-17

Oxidation can deteriorate the properties of copper that are critical for its use, particularly in semiconductor industry and electro-optics applications

10.1038/s41586-021-04375-5 article EN cc-by Nature 2022-03-16

ADVERTISEMENT RETURN TO ISSUEPREVCommunicationNEXTSelf-Assembled Arrays of Organic Nanotubes with Infinitely Long One-Dimensional H-Bond ChainsByung Hee Hong, Jin Yong Lee, Chi-Wan Jong Chan Kim, Sung Chul Bae, and Kwang S. KimView Author Information National Creative Research Initiative Center for Superfunctional Materials Department Chemistry Division Molecular Life Sciences Pohang University Science Technology 790-784, Korea Cite this: J. Am. Chem. Soc. 2001, 123, 43,...

10.1021/ja016526g article EN Journal of the American Chemical Society 2001-10-03

This study demonstrates the enhanced Cu2+ adsorption capability of polyaniline nanofibers (PAni NFs) by doping phytic acid. The PAni NFs were synthesized radical polymerization process using acidic solutions hydrochloric and acid, yielding chlorinated (Cl-) acid-doped (Ph-) NFs. Ph-PAni showed remarkably higher Cu2+-adsorption efficiency than Cl-PAni NFs, presumably owing to high capacity and/or ionic affinity doped acid in pH-dependent exhibited increasing trend as aqueous pH because...

10.1021/acssuschemeng.7b00898 article EN ACS Sustainable Chemistry & Engineering 2017-07-03

The human brain intrinsically operates with a large number of synapses, more than 1015. Therefore, one the most critical requirements for constructing artificial neural networks (ANNs) is to achieve extremely dense synaptic array devices, which crossbar architecture containing an node at each cross indispensable. However, arrays suffer from undesired leakage signals through neighboring cells, major challenge implementing ANNs. In this work, we show that can be overcome by using...

10.1038/s41427-018-0101-y article EN cc-by NPG Asia Materials 2018-12-01

Heterosynaptic neuromodulation is a key enabler for energy-efficient and high-level biological neural processing. However, such manifold synaptic modulation cannot be emulated using conventional memristors transistors. Thus, reported herein three-terminal heterosynaptic memtransistor an intentional-defect-generated molybdenum disulfide channel. Particularly, the defect-mediated space-charge-limited conduction in ultrathin channel results memristive switching characteristics between source...

10.1002/adma.202211525 article EN Advanced Materials 2023-03-17

A gate stack that facilitates a high-quality interface and tight electrostatic control is crucial for realizing high-performance low-power field-effect transistors (FETs). However, when constructing conventional metal-oxide-semiconductor structures with two-dimensional (2D) transition metal dichalcogenide channels, achieving these requirements becomes challenging due to inherent difficulties in obtaining dielectrics through native oxidation or film deposition. Here, gate-dielectric-less...

10.1002/adma.202314274 article EN Advanced Materials 2024-04-22

In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across interface is a critical factor to determine device performances. Here, we report an unexplored approach boost performances WSe2-MoS2p-n heterojunctions via monolithic-oxidation-induced doping and resultant modulation band alignment. proposed device, atomically thin WOx layer, which directly formed by layer-by-layer oxidation WSe2, used as...

10.1021/acs.nanolett.9b05162 article EN Nano Letters 2020-03-19

Monolayer transition metal dichalcogenides (TMDs) are promising for optoelectronics because of their high optical quantum yield and strong light-matter interaction. In particular, the van der Waals (vdW) heterostructures consisting monolayer TMDs sandwiched by large gap hexagonal boron nitride have shown great potential novel optoelectronic devices. However, a complicated stacking process limits scalability practical applications. Furthermore, even though lots efforts, such as fabrication...

10.1021/acsami.0c18364 article EN ACS Applied Materials & Interfaces 2020-12-23

Graphene oxide decorated with oxygen functional groups is a promising candidate as an active layer in resistive switching devices due to its controllable physical-chemical properties, high flexibility, and transparency. However, the origin of conductive channels their growth dynamics remain major challenge. We use situ transmission electron microscopy techniques demonstrate that nanoscale graphene sheets bonded dynamically change physical chemical structures upon applied electric field....

10.1021/acsnano.8b03806 article EN ACS Nano 2018-07-09

Achieving high emission efficiency in solid-state quantum dots (QDs) is an essential requirement for high-performance QD optoelectronics. However, most films suffer from insufficient excitation and light extraction efficiencies, along with nonradiative energy transfer between closely adjacent QDs. Herein, we suggest a highly effective strategy to enhance the photoluminescence (PL) of composite through assembly QDs poly(styrene-b-4-vinylpyridine)) (PS-b-P4VP) block copolymer (BCP). A BCP...

10.1021/acs.nanolett.9b01941 article EN Nano Letters 2019-09-03

Abstract The evaporation and crystal growth rates of ZnO are highly anisotropic fastest on the Zn-terminated (0001) polar surface. Herein, we study this behavior by direct atomic-scale observations simulations dynamic processes surface during evaporation. is accelerated dramatically at around 300 °C with spontaneous formation a few nanometer-thick quasi-liquid layer. This structurally disordered chemically Zn-deficient derived from inward diffusion Zn vacancies that stabilize controls...

10.1038/s41467-022-33353-2 article EN cc-by Nature Communications 2022-09-24

Abstract Constructing a mono-atom step-level ultra-flat material surface is challenging, especially for thin films, because it prohibitively difficult trillions of clusters to coherently merge. Even though rough metal surface, as well the scattering carriers at grain boundaries, limits electron transport and obscures their intrinsic properties, importance flat has not been emphasised sufficiently. In this study, we describe in detail initial growth copper films required surfaces (MSFSs)....

10.1038/s41467-023-36301-w article EN cc-by Nature Communications 2023-02-08

In this study, we investigated the ink formulation of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as hole injection layer (HIL) in an organic light emitting diode (OLED) structure. Generally, a PEDOT:PSS solution, water is incorporated solution for process. However, fabrication thin film which contained water, main solvent, could not easily form by using printing technology except spin-coating process because high surface tension water. On other hand, mixing and...

10.3390/app8020203 article EN cc-by Applied Sciences 2018-01-30

Visualizing the oxygen vacancy distributions is highly desirable for understanding atomistic diffusion mechanisms in perovskites. In particular, direct observation of one-dimensional channels has not yet been achieved perovskites with dual ion (i.e., cation and anion) ordering. Here, we perform atomic-resolution imaging their structural dynamics a NdBaCo2O5.5 double perovskite oxide. An situ heating transmission electron microscopy investigation reveals disordering by local rearrangement...

10.1021/acs.nanolett.0c03516 article EN Nano Letters 2020-10-28

Quantum wells (QWs), enabling effective exciton confinement and strong light-matter interaction, form an essential building block for quantum optoelectronics. For two-dimensional (2D) semiconductors, however, constructing the QWs is still challenging because suitable materials fabrication techniques are lacking bandgap engineering indirect transitions occur at multilayer. Here, we demonstrate unexplored approach to fabricate atomic-layer-confined multiple (MQWs) via monolithic of transition...

10.1126/sciadv.abd7921 article EN cc-by-nc Science Advances 2021-03-26

The structure and the electronic optical properties of halogenated copper-phthalocyanine (nalpha,mbeta(Hal)-CuPc) molecules are investigated, according to variation in substituted halogen-atom species (Hal=Cl or Br) at alpha beta positions isoindole ring with different numbers (n m=0, 4, 8, 16). Our results show that halogen effect mainly from a structural deformation rather than caused by effects. A nonplanar phthalocyanine chromophore nalpha,mbeta(Hal)-CuPc molecule causes significant...

10.1002/asia.200900601 article EN Chemistry - An Asian Journal 2010-04-15
Coming Soon ...