A5001787792- Ion-surface interactions and analysis
- Integrated Circuits and Semiconductor Failure Analysis
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Electron and X-Ray Spectroscopy Techniques
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Advanced Materials Characterization Techniques
- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Thin-Film Transistor Technologies
- X-ray Diffraction in Crystallography
- Solid State Laser Technologies
- Phase-change materials and chalcogenides
- Magnetic properties of thin films
- Ga2O3 and related materials
- Nonlinear Optical Materials Research
- Quantum Dots Synthesis And Properties
- Solid-state spectroscopy and crystallography
- Photocathodes and Microchannel Plates
- Planetary Science and Exploration
- Advancements in Semiconductor Devices and Circuit Design
Dubna State University
2025
IMEC
2023-2024
Imec the Netherlands
2024
Cameca (France)
2004-2019
Cameca (United States)
2018
KU Leuven
2008
Kyoto University
2008
Russian Academy of Sciences
1997-2006
Institute of Mineralogy
2004-2006
University of Michigan
2006
Sorption of actinides, particularly plutonium, onto submicrometer-sized colloids increases their mobility, but these plutonium are difficult to detect in the far-field. We identified actinides on groundwater from Mayak Production Association, Urals, Russia; at source, activity is approximately 1000 becquerels per liter. Plutonium activities still 0.16 liter a distance 3 kilometers, where 70 90 mole percent sorbed colloids, confirming that responsible for long-distance transport plutonium....
Abstract Single crystals LiGaX 2 (X = S, Se, Te) of optical quality were grown, with transparency ranges at 5 cm ‐1 absorption level 0.32‐11.6 μm, 0.37‐13.2 μm and 0.54‐14.2 respectively. The first two, LiGaS LiGaSe , have a wurtzite‐type structure whereas LiGaTe is tetragonal (chalcopyrite lattice). three refractive indices measured in the whole n c found to be very close (quasi‐uniaxial anisotropy) crosspoint 6.5 (LiGaS ) 8 (LiGaSe ). Sellmeier equations fitted phase‐matching conditions...
The chalcopyrite crystal LiGaTe2 was grown by the Bridgman-Stockbarger technique with sufficient size and optical quality that allowed characterization of its linear (dispersion birefringence) nonlinear properties. X-ray structural analysis performed on single crystals. transmission recorded in 0.5−24 μm range, Raman IR-spectra were 0−400 cm-1 180−400 ranges, respectively. clear transparency range extends from 2.5 to 12 μm, band-gap at room temperature is 2.41 eV (515 nm), residual...
The manuscript examines the applicability of lithium‐vanadium oxide‐fluorocarbon electrochemical system for primary batteries with both high‐power and high specific energy density. influence mass ratio fluorinated carbon vanadium oxide in composition positive electrode on its characteristics is studied. At a low discharge current density 0.17 mA cm −2 proportional to fraction CF x cathode layer achieves up 900 Wh kg (cathode layer) −1 cells active material V 2 O 5 :CF = 100%:0% 1800 0%:100%....
Rare earth (RE):transition metal (TM) ferrimagnetic alloys continue to attract significant attention for spintronics. This work focuses on the elemental distribution of RE and TM elements throughout thickness nominally uniform films resulting spatial variations magnetization within these layers. Samples CoFe alloyed with Gd were studied using secondary ion mass spectroscopy, polarized neutron reflectometry, x-ray resonant magnetic reflectivity. The samples grown by magnetron co-sputtering...
The incorporation of magnesium and carbon in GaN grown by molecular beam epitaxy (MBE) has been investigated secondary ion mass spectroscopy (SIMS) other techniques. We have Mg:GaN a wide range chemical concentrations -. Low temperature photoluminescence is dominated the donor-acceptor transitions associated with Mg at eV. Carrier concentration for - mobilities were measured Hall effect technique. In C:GaN layers, it was found that can be uniformly incorporated into layer . However, this...
This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration the cesium and oxygen sources CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impact energy with sputter rates of 1 2 nm/min Cs+ O2+ primary beams, respectively. Results as-implanted B, P, As profiles using extremely low (EXLIE) sputtering conditions are reported. They compared high resolution Rutherford backscattering elastic...
Secondary ion mass spectrometry analysis of ultra-shallow (sub-200 eV) B implants is complicated by the presence native oxide on surface Si. Knowledge type present as well accurate thickness very important for correct data reduction in extra-low energy depth profiling. Sputter rate (SR) variation approach based SR measurement Si and SiO2 can be successfully applied to done through thermal oxides various thicknesses. Lowest profiling should used achieve least profile distortion case...
Secondary negative ions yields of elements in the IIIrd, IVth, Vth periodic table groups emitted under Cs+ bombardment Si surface presence oxygen are reported. The ion yield variation on partial pressure analytical chamber obtained for different allows taking a step forward development secondary emission model. enhancement particular coverage offers an approach quantitative analysis ultra-shallow semiconductor structures and interfaces. Copyright © 2012 John Wiley & Sons, Ltd.
The effect of using an indium flux during the MBE growth GaN layers was investigated. properties these were studied electron probe microanalysis, secondary ion mass spectroscopy, photoluminescence and cathodoluminescence. optical are shown to improve as compared with undoped grown under nominally same conditions but without additional flux.
Abstract This paper presents analytical performances provided by SIMS tools for the development and manufacture of new solar cells. Results two main applications are presented: trace element analysis in PV (photovoltaic) Si feedstock with detection limits from ppm down to ppb range (depending on species be analyzed) light elements (C, O, N), dopants (B, P, As) metals; indepth distribution components CIGS thin films. Copyright © 2010 John Wiley & Sons, Ltd.
Improving the manufacturing yield in light emitting diode highly competitive market requires process control strategy similar to what has been applied integrated circuit (IC) for years. Dynamic secondary ion mass spectrometry (SIMS) is a key analytical technique, as it provides depth profiles with excellent detection sensitivity dopants and impurities, while keeping high analysis throughput. SIMS data obtained using CAMECA IMS 7f will be presented. Based on double focusing magnetic sector...
We have studied the incorporation of Be and Si in GaN grown using molecular beam epitaxy (MBE). From secondary-ion mass spectroscopy (SIMS) measurements, was found to an enhanced diffusion rate at high concentration similar behaviour observed previously GaAs. On other hand, behaves as a conventional n-type dopant with no evidence from SIMS for either segregation or out layer. For Be-incorporated material we report new lines PL spectrum both wurtzite zinc blende polytypes, suggest that may be...
Abstract This paper presents an investigation on SIMS profile quantification for ultra‐shallow profiles. New configuration the Cesium and Oxygen sources CAMECA IMS Wf tool provides profiling capability at 150 eV impact energy with a sputter rate of 1 2 nm/min Cs + O primary beams, respectively. Results as‐implanted B, P As profiles using extremely low (EXLIE) sputtering conditions are compared HR‐RBS ERDA Copyright © 2010 John Wiley & Sons, Ltd.
Although the use of cesium (or oxygen) primary ions in secondary ion mass spectrometry (SIMS) enabled its success microelectronics, issues arise at ultra‐low energies, as required for extreme depth resolution, sputter yield becomes very small such that one enters regime beam deposition instead material erosion. A potential solution is then to lower Cs supply by using a Cs/Xe co‐sputtering introduced ION‐TOF and explored extensively J. Brison. In this work, we describe somewhat similar...