A5053636885- Quantum Information and Cryptography
- Thin-Film Transistor Technologies
- Quantum optics and atomic interactions
- ZnO doping and properties
- Cold Atom Physics and Bose-Einstein Condensates
- Corrosion Behavior and Inhibition
- Advanced Battery Materials and Technologies
- Quantum Mechanics and Applications
- Semiconductor materials and devices
- Advancements in Battery Materials
- Concrete Corrosion and Durability
- Electrokinetic Soil Remediation Techniques
- Transition Metal Oxide Nanomaterials
- Nanowire Synthesis and Applications
- Quantum Computing Algorithms and Architecture
- Silicon Nanostructures and Photoluminescence
- Mechanical and Optical Resonators
- Silicon and Solar Cell Technologies
- Petroleum Processing and Analysis
- Conducting polymers and applications
- Advanced Fluorescence Microscopy Techniques
- Semiconductor Quantum Structures and Devices
- Environmental remediation with nanomaterials
- Electrodeposition and Electroless Coatings
- Geophysical and Geoelectrical Methods
Stony Brook University
2018-2023
China University of Petroleum, Beijing
2018-2023
Peking University
2015-2023
Inner Mongolia University
2022
University of Manchester
2020
Brookhaven National Laboratory
2020
Czech Technical University in Prague
2020
State University of New York
2018
Institute of Microelectronics
2015-2017
Shanghai Micro Electronics Equipment (China)
2015
The development of MnO2 as a cathode for aqueous zinc-ion batteries (AZIBs) is severely limited by the low intrinsic electrical conductivity and unstable crystal structure. Herein, multifunctional modification strategy proposed to construct N-doped KMn8 O16 with abundant oxygen vacancy large specific surface area (named N-KMO) through facile one-step hydrothermal approach. synergetic effects N-doping, vacancy, porous structure in N-KMO can effectively suppress dissolution manganese ions,...
Abstract Scalable technologies to characterize the performance of quantum devices are crucial creating large networks and processing units. Chief among resources information is entanglement. Here we describe full temporal spatial characterization polarization-entangled photons produced by Spontaneous Parametric Down Conversions using an intensified high-speed optical camera, Tpx3Cam. This novel technique allows for precise determination Bell inequality parameters with minimal technical...
In the process of exploration and development oil gas fields, acidic environment reservoir, production transport processes cause corrosion pipelines equipment, resulting in huge economic losses safety risks. Corrosion inhibitors were widely used industry because simple operation economical. this study, three environmentally friendly synthesized based on natural polysaccharide chitosan. inhibition dendritic chitosan derivatives (We name them BH, CH DH) mild steel 1 mol/L HCl solution with...
We explore the quantum metrology in an optical molecular system coupled to two environments with different temperatures, using a master equation beyond secular approximation. discover that steady-state coherence originating from and sustained by nonequilibrium condition can enhance metrology. also study quantitative measures of terms curl flux, heat current entropy production at steady state. They are found grow temperature difference. However, apparent paradox arises considering contrary...
We describe the full temporal and spatial characterization of polarization-entangled photons produced by Spontaneous Parametric Down Conversions using an intensified high-speed optical camera, Tpx3Cam. This novel technique allows for precise determination Bell inequality parameters new methods distribution entangled quantum information. also discuss a to synchronize multiple cameras separated vast distances, which will be required distributed network.
Abstract High-performance calcium-doped zinc oxide thin-film transistors (Ca-ZnO TFTs) have been successfully fabricated on transparent glass at low temperature by RF magnetron sputtering. To study the effects of calcium doping transistors, characteristics Ca-ZnO TFTs and ZnO are compared analyzed in detail from different perspectives, including electrical performance, surface morphology, crystal structure material. The results suggest that incorporation element can decrease root-mean-square...
This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere different temperatures have also been investigated. ALD AZO/ZnO TFTs annealed dry O2 300 °C exhibit leakage current 2.5 × 10-13A, I on/I off ratio 1.4 107, subthreshold swing (SS) 0.23 V/decade, and high transmittance. enhanced performance obtained from the TFT devices is explained by...
In this study, titanium (Ti)-doped zinc oxide thin film transistors (TiZO TFTs) with a double-layer gate dielectric were successfully fabricated on glass at low temperature. A stacked 7 nm-thick Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /180 SiO layer was used to improve the electrical performance of TFTs, especially their leakage characteristics. Compared single dielectric,...
By applying a novel active layer comprising ZnO/Al2O3 multilayers, we have successfully fabricated fully transparent high-performance thin-film transistors (TFTs) with bottom gate structure by atomic deposition (ALD) at low temperature. The effects of various multilayers were studied to improve the morphological and electrical properties devices. We found that significant impact on performance TFTs, TFTs ZnO/15-cycle Al2O3/ZnO exhibit superior threshold voltage (VTH) 0.9 V, high saturation...
Long-range quantum communication requires the development of in-out light-matter interfaces to achieve a advantage in entanglement distribution. Ideally, these interconnections should be as fast possible high-rate entangled qubits Here, we demonstrate coherent quanta exchange between single photons generated on-demand from GaAs dot and atomic ensemble $^{87}$Rb vapor memory. Through an open system analysis, mapping quantized electric field coherence ensemble. Our results play pivotal role...
We demonstrate coherent interactions between quantum dot single photons and a resonant 87 Rb ensemble in the experiment show an open system analysis. These results could help build fast hybrid networks.
Non-classical paired photons are generated by a four-wave mixing process in far-detuning three-level system with cold atoms. A violation of the Cauchy-Schwartz inequality factor 310 is observed. This phenomenon shows that have non-classical correlation. The experimental results compared theoretical obtained using perturbation theory. oscillation frequencies two-photon intensity correlation functions reasonable agreement effective Rabi coupling laser. However, we find dephasing rates (or...
Coplanar bottom-gate aluminum-zinc-oxide (AZO) thin film transistors (TFTs) with aluminum (Al) capping layers were fabricated in this work. The influences of the Al layer thickness and post-annealing condition on performance AZO-TFTs investigated. Results show that are enhanced significantly by introducing back channel, saturation mobility increasing dramatically from 0.128 to 12.6 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V ·...
Bottom gate, top contact thin‐film transistors (TFTs) with transparent Sn‐doped zinc oxide as the active layer have been fabricated on glass substrate at room temperature. Indium tin oxide, alumni (AZO) and Al thin films serve source/drain (S/D) electrode. It turns out that devices AZO S/D electrodes exhibit preferable properties such a saturation mobility of 13.6 cm 2 /Vs, subthreshold slope 381 mV/decade, V th 3.47 an on/off current ratio 3.1 × 10 7 . Moreover, superior output...
Building a Quantum Internet requires the development of new networking concepts at intersection frontier communication systems and long-distance quantum communication. Here, we present implementation quantum-enabled internet prototype, where have combined Software-Defined Time-Sensitive Networking principles with Communication between memories. Using deployed network connecting Stony Brook University Brookhaven National Laboratory, demonstrate fundamental service, that high-visibility...
We successfully fabricated the fully transparent Al–Sn–Zn–O thin‐film transistors (ATZO TFTs) on glass by RF magnetron sputtering, and then electrical performances of ATZO TFTs are optimized with double‐channel structures. The structures formed using bilayer films successively different oxygen partial pressure in sputtering process. operation mechanism for were clarified. Owing to structure, TFT demonstrates excellent performances, including a high ON/OFF current ratio ( I /I off ) 1.1 × 10...