The paper predicts a giant thermoelectric coefficient in nanostructure consisting of metallic electrodes periodically patterned over graphene, which is deposited on silicon dioxide substrate. Seebeck this device attains 30mV∕K, value being among the largest reported ever. calculations are based transfer matrix approach that takes particular form for graphene-based devices. results important future nanogenerators with applications area sensors, energy harvesting, and scavenging.

We have investigated several configurations of antennas based on graphene. show that patterned metallic dipole or arrays deposited graphene highly benefit from the reversible high-resistivity-to-low-resistivity transition in graphene, tuned by a gate voltage. The radiation pattern and efficiency such are changed via voltage applied

The graphene is a native two-dimensional crystal material consisting of single sheet carbon atoms. In this unique one-atom-thick material, the electron transport ballistic and described by quantum relativisticlike Dirac equation rather than Schrödinger equation. As result, barrier behaves very differently compared to common semiconductor barrier. authors show that acts as switch with high on-off ratio displays significant differential negative resistance, which promotes key in nanoelectronics.

Graphene nanoelectronics is an emerging area of research. The 2010 Nobel Prize for physics was awarded to A. Geim and K. Novoselov the discovery graphene its unexpected physical properties, paving way many new applications in nanoelectronics, nanooptics, solid state physics. most-studied microwave device transistor, which, only three years, has reached a cutoff frequency 100 GHz. As consequence this impressive development, prediction that 0.5-1 THz FET transistor will soon be demonstrated...

We report on measurements and modeling of microwave propagation in graphene. In deep contrast with carbon nanotubes, which display very high impedances the range, planar waveguides patterned directly graphene a 50 Ω impedance, is tuned slightly by an applied dc. The values kinetic impedance nanotubes were not observed

In this letter, we demonstrate that a graphene monolayer, over which three metallic electrodes forming coplanar waveguide are patterned, acts as frequency multiplier and generates frequencies at least up to 40 GHz. These results show monolayer is natural multiplier.

We present the modeling and measurements of microwave propagation in a coplanar waveguide over graphene range frequencies 40 MHz-110 GHz, which suggest that could work well very large bandwidth. Graphene is acting as natural matching device because its equivalent resistance at these able to vary more than 75% when DC biases are applied −4 V 4 on waveguide.

The paper presents the state‐of‐the art of nanoelectronic devices based on 2D materials related to cutting edge Moore's law. Ballistic electron devices, ferroelectric, and atomically thin heterostructures are analyzed show benefits applications in nanoelectronics. It is shown that these new fulfill basic requirements for further developments circuits architectures envisaged beyond Moore However, many aspects, concepts, as well their implementations, at very beginning, so main obstacles be...

Abstract A single field-effect transistor (FET) based on nitrogen doped-nickel oxide (NiON) semiconductor ferroelectric shows an ultralow voltage switch at a gate value of just 1 μV and subthreshold swing (SS) 55 mV/decade. The same FET acts as capacitive non-volatile memory between the drain ground. All these features are retrieved in NiON grown thin layer aluminum (Al2O3), which was deposited doped silicon (Si) wafer. After one year, we values our devices without any thermal annealing or...

A succession of directional couplers, which differ only through their refractive index distribution, is shown to be the optical analog type II semiconductor heterostructures. The design such a dielectric structure with same transmission characteristic electric field propagating it as electron wave function in heterostructure discussed. An example procedure also given.

This paper shows that we can print on simple high-frequency electronic devices such as resistances, capacitances or inductances, with values be changed in a controllable manner by an applied dc voltage. tunability is achieved the help of ink containing functionalized carbon nanotubes and water. After water evaporated from paper, remain steadily imprinted showing semiconducting behavior tunable electrical properties.

We present a graphene-based ballistic diode, which is able to rectify an incident signal due oblique gate positioned between the two terminals of device. The operating point diode can be controlled by applied voltage, whereas current-voltage dependence device changed varying inclination angle gate. In particular, ideality factor take values higher or lower than 1 modifying this angle. rectifying properties graphene are thus tunable, in deep contrast with semiconductor-based diodes.

This paper presents the applications of Hf0.3Zr0.7O2 ferroelectric with a thickness 10 nm for tuning high-frequency devices such as filters, phase shifters, and phased antenna arrays in X band when low bias voltages range −3 V–+3 V are applied. In this respect, we show that bandpass filter shifts its central frequency located at GHz 3 GHz, shifter produces difference about 60 degrees band, while array formed by two patched antennas is steering lobe ±32° GHz. These results open way tunability...

This article is dedicated to HfO 2 ‐based ferroelectrics applications in nanoelectronics, especially topics not well developed up now, such as microwaves, energy harvesting, and neuromorphic devices working artificial neurons synapses. Other well‐covered the literature, memories or negative‐capacitance ferroelectric field‐effect transistors, will be only briefly mentioned. The main impact of possibility using them for fabricating at wafer‐level complementary metal oxide semiconductor (CMOS)...