While multiple studies have explored the mechanism for DC and AC microscale gas breakdown, few assessed pulsed voltage breakdown at microscale. This study experimentally analytically investigates gap widths from 1 μm to 25 μm. Using an electrical-optical measurement system with a spatial resolution of temporal 2 ns, we measure voltages determine morphology as function width. An empirical fit shows that varies linearly distance smaller gaps, agreeing analytical theory coupling field emission...

Conventional designs of the extensively studied resistive-random access-memory (RRAM) cell involve one transistor and RRAM-"1T1R," i.e., two separate devices thereby constraining its integration density. In this work, we overcome longstanding limitation by experimentally demonstrating a novel memory architecture that combines 1T 1R into single hybrid device uniquely leveraging both lateral vertical van der Waals (vdW) heterostructures. This ultracompact device, which can be considered as...

Doped-multilayer-graphene (DMLG) interconnects employing the subtractive-etching (SE) process have opened a new pathway for designing at advanced technology nodes, where conventional metal wires suffer from significant resistance increase, self-heating (SH), electromigration (EM), and various integration challenges. Even though single-level scaled graphene been shown to possess better performance reliability with respect dual-damascene (DD) SE-enabled wires, multi-level interconnect (with...

A thickness-tunable, ultra-large, continuous and high-dielectric h-BN films, achieved by optimizing LPCVD growth parameters, exhibit highly promising perspectives to develop electrically reliable 2D microelectronics with an ultrathin feature.

In this work, we experimentally demonstrate, in a manufacture-friendly process, hybrid memory device to replace the traditional 1T1R unit that is composed of one-transistor and one-resistive-random-access-memory (RRAM), i.e., two separate devices. This novel device, which can be considered as 0.5T0.5R cell, structurally enabled by utilizing unique graphene edge-contact resistively switchable hexagonal boron nitride (h-BN) insulator. Aided design optimization, record performance (<; 10 ns...

Electrical breakdown properties at microscale is very vital not only to the insulation issues of microdevices but also micro plasma applications. Herein, we reported an optical diagnosis method for in-situ investigation on in air atmosphere. The measurement system comprises microscope amplify light emission (with resolution 1μm) and Intensified charge-coupled device (ICCD) camera capture transient 2ns). Results show that when gap width 40 μm, starts from cathode flat-top breakdown, while...

Nowadays, electrical insulation issue has attracted increasing concerns as the physical dimension of devices and equipment shrinks to micrometer even nanometer. Since almost all nanostructures nanodevices are driven by bias, it is very vital make sure a good robustness while operating under high electric field. Hence, understand breakdown behaviors across vacuum nanogap great interest for reliability evaluation naonstructures nanodevices. In present work, cathode materials with various...

Doped-multilayer-graphene (DMLG) interconnects employing the subtractive-etching (SE) process have opened a new pathway for designing extremely scaled dimensions [1],[2]. Even though single-level graphene wires been demonstrated with comparable or lower resistivity and higher reliability w.r.t dual-damascene (DD) SE-enabled metal-wires [1]-[3], performance of multi-level interconnect technology (with vias) remained elusive, which is paramount importance its integration in future nodes. This...

Hexagonal boron nitride (h-BN) is an ideal twodimensional dielectric material, with excellent physical, chemical, thermal, mechanical and properties, which makes it especially attractive for logic device applications. For the h-BN film used as a layer in graphene-based electronic devices, insulation performance evaluation under ultra-high DC electric stress key issue. Nevertheless, only few works can be found on investigation of atomic so far. In present work, we report experimental...

Vacuum breakdown at nanoscale are drawing more and attractions due to the dramatic shrink of feature size for vacuum microelectronic devices in space environment other fields, which demands a further exploring on fundamental properties nanoscale. Hence, present paper, recent progress experimental simulation work summarized presented, involving published our research work. The general methodology, typical techniques influence factors all investigated summarized. Results show that combination...

Nowadays, electrical insulation issue has attracted increasing concerns as the physical dimension of devices and equipment shrinks to micrometer even nanometer. Since almost all nanostructures nanodevices are driven by bias, it is very vital make sure a good robustness while operating under high electric field. Hence, understand breakdown behaviors across vacuum nanogap great interest for reliability evaluation naonstructures nanodevices. In present work, cathode materials with various...

In order to study the partial discharge (PD) characteristics and evaluate insulation conditions of inverter-fed motor under sinusoidal voltage automatically, a set automatic test system is designed based on high frequency current transformer (HFCT) detection technologies. six high-voltage relays are connected with three-phase windings grounded enclosure motor. By controlling different (on or off) through FPGA help speed data processing function DSP, all inception (PDIV) phase-to-phase...

Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap $( 5.2 \sim 5.9$ eV) which has high breakdown strength. To synthesize h-BN films, chemical vapor deposition (CVD) method proved to be an effective that allows the scaled synthesis of h-BN. In this study, we demonstrate low pressure (LPCVD) complete and uniform films. order obtain crystalline studied flow rate carrier gas precursor sublimation temperature on growth The results indicate little influence...

Paschen's curve which is based on Townsend effects has been used to describe the gas breakdown voltage until more and experiments shown that it not entirely accurate in describing when electrode gaps less than 10μm. Thus of great significance study microscale law discharge mechanism insulation structure micro-electronic components. In this work, numerical using particle-in-cell/Monte Carlo collisions method are simulate process microgap air. The variation number charged particles, current...

The electrical discharge and insulation performance at microscale have attracted much attention as the physical dimensions of electron devices are aggressively shrinking down. Hence, to prevent unwanted breakdown or utilize for producing microplasma, both require a better understanding process across micro gaps, which cannot be explained by classical Paschen law1. Therefore, in present work, morphology channels various gap lengths been investigated air atmosphere, based on home-built...

Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap $( 5.2 \sim 5.9$ eV) which has high breakdown strength. To synthesize h-BN films, chemical vapor deposition (CVD) method proved to be an effective that allows the scaled synthesis of h-BN. In this study, we demonstrate low pressure (LPCVD) complete and uniform films. order obtain crystalline studied flow rate carrier gas precursor sublimation temperature on growth The results indicate little influence...

Paschen's curve which is based on Townsend effects has been used to describe the gas breakdown voltage until more and experiments shown that it not entirely accurate in describing when electrode gaps less than 10μm. Thus of great significance study microscale law discharge mechanism insulation structure micro-electronic components. In this work, numerical using particle-in-cell/Monte Carlo collisions method are simulate process microgap air. The variation number charged particles, current...