Two-dimensional (2D) crystal semiconductors, such as the well-known molybdenum disulfide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ), are witnessing an explosion in research activities due to their apparent potential for various electronic and optoelectronic applications. In this paper, dissipative quantum transport simulations using nonequilibrium Green's function formalism performed rigorously evaluate scalability...

This paper presents an analytical current-voltage model specifically formulated for 2-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor based field-effect transistors (FETs). The is derived from the fundamentals considering physics of 2D TMD crystals, and covers all regions FET operation (linear, saturation, subthreshold) under a continuous function. Moreover, three issues great importance in emerging arena: interface traps, mobility degradation, inefficient doping have...

Metal contacts to atomically thin two-dimensional (2D) crystal based FETs play a decisive role in determining their operation and performance. However, the effects of on switching behavior, field-effect mobility, current saturation monolayer MoS2 have not been well explored and, hence, is focus this work. The dependence contact resistance drain revealed by four-terminal-measurements. Without high-κ dielectric boosting, an electron mobility 44 cm2/(V·s) has achieved FET SiO2 substrate at room...

Copper-based interconnects employed in a wide range of integrated circuit (IC) products are fast approaching dead-end due to their increasing resistivity and diminishing current carrying capacity with scaling, which severely degrades both performance reliability. Here we demonstrate chemical vapor deposition-synthesized intercalation-doped multilayer-graphene-nanoribbons (ML-GNRs) better (more than 20% improvement estimated delay per unit length), 25%/72% energy efficiency at local/global...

Abstract The negative-capacitance field-effect transistor(NC-FET) has attracted tremendous research efforts. However, the lack of a clear physical picture and design rule for this device led to numerous invalid fabrications. In work, we address issue based on an unexpectedly concise insightful analytical formulation minimum hysteresis-free subthreshold swing ( SS ), together with several important conclusions. Firstly, well-designed MOSFETs that have low trap density, doping in channel,...

As a possible pathway to continue Moore's law indefinitely into the future as well unprecedented beyond-Moore heterogeneous integration, we examine prospects of building monolithic 3D integrated circuits (M3D-IC) with atomically-thin or 2D van der Waals materials in terms overcoming major drawbacks current 3D-ICs, including low process thermal budget, inter-tier signal delay, chip-overheating, and electrical interference problems. Our holistic evaluation includes consideration performance,...

Since the discovery of graphene in 2004, which proved existence 2-D crystals nature, layered materials also known as van der Waals solids have received extensive reexamination, especially single-layer and multilayer forms because their type structure unique properties that not only benefit many existing electronic components but enable novel device concepts design architectures. Numerous research efforts been invested these materials, enormous quantities results generated during past 14...

Abstract Brain-like energy-efficient computing has remained elusive for neuromorphic (NM) circuits and hardware platform implementations despite decades of research. In this work we reveal the opportunity to significantly improve energy efficiency digital by introducing NM employing two-dimensional (2D) transition metal dichalcogenide (TMD) layered channel material-based tunnel-field-effect transistors (TFETs). Our novel leaky-integrate-fire (LIF) based circuit along with its Hebbian...

In this paper, we first review the impressive properties of two-dimensional (2D) nanocrystals, primarily graphene and beyond-graphene 2D crystals, such as transition-metal dichalcogenides (TMDs), then highlight some applications uniquely enabled by these materials for designing next-generation low-power low-loss "green electronics". Key challenges crystals relevant to are discussed well.

Recently, Molybdenum Disulphide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) has emerged as a promising candidate for low-power digital applications. Compared to monolayer (1L) MoS , few-layer (FL-MoS is attractive due its higher density of states (DOS). However, comprehensive study FL-MoS field-effect-transistor (FET) lacking. In this paper, we report high-performance FET with record low contact resistance (~0.8 KΩ.μm) that...

Low-resistance ohmic contacts are a prerequisite for implementing two-dimensional transition-metal dichalcogenides (2D TMDs) in host of applications. Edge offer unique advantages, yet their electrical properties not fully understood. Employing an $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ framework, the authors find that edge to monolayer MoS${}_{2}$ pinned charge-neutrality level...

Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability achieve subthreshold swing (SS) below 60 mV/decade. This letter reports comprehensive study of SS TFETs by examining effects electrostatics and material parameters on through physics based analytical model. Based analysis, an intrinsic degradation effect in is uncovered. Meanwhile, it also shown that designing...

Conventional floating-gate (FG) transistors (made with Si/poly-Si) that form the building blocks of widely employed nonvolatile flash memory technology face severe scaling challenges beyond 12-nm node. In this paper, for first time, a comprehensive evaluation FG transistor made from emerging nanocrystals in 2-dimensional (2D) transition metal dichalcogenides (TMDs) and multilayer graphene (MLG) is presented. It shown TMD based 2D channel materials have excellent gate length potential due to...

Conventional designs of the extensively studied resistive-random access-memory (RRAM) cell involve one transistor and RRAM-"1T1R," i.e., two separate devices thereby constraining its integration density. In this work, we overcome longstanding limitation by experimentally demonstrating a novel memory architecture that combines 1T 1R into single hybrid device uniquely leveraging both lateral vertical van der Waals (vdW) heterostructures. This ultracompact device, which can be considered as...

Monolayer Tungsten Diselenide (WSe2) exhibits tremendous advantages as a channel material for next-generation field-effect-transistors (FETs). This paper reviews the relevant physics and properties of WSe2 highlights excellent scalability monolayer ultra-short (sub-5 nm) FETs. The crucial role metal-WSe2 contacts in determining performance FETs is also emphasized using experiments guided by ab-initio density functional theory (DFT). With suitably chosen contact, back-gated FET on Al2O3...

Tunneling field-effect transistors (TFETs) are well known for their potential in low power electronics. The emerging two-dimensional (2D) semiconductors provide an excellent platform constructing TFETs with desired properties. In this paper, by employing non-equilibrium Green's function (NEGF) based quantum transport simulations, 2D semiconductor innovatively designed and optimized, terms of performance, energy efficiency, scalability (up to 3 nm gate length, L <sub...

In this letter, we demonstrate the first top-gated 10-nm scale field-effect transistor with chemical-vapor-deposition synthesized monolayer MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> as channel material. Ultra-thin metallic Co Si nanowires are employed to gate and thereby define device feature size-gate/channel length, well serve a self-aligned mask for source/drain metallization. This process not only avoids using high-cost...

Two-dimensional (2D) crystal semiconductors, such as the well-known molybdenum disulfide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ), are witnessing an explosion in research activities due to their apparent potential for various electronic and optoelectronic applications. In this paper, dissipative quantum transport simulations using non-equilibrium Green's function (NEGF) formalism performed rigorously evaluate scalability...

Ordered arrays of quantum dots in two-dimensional (2D) materials would make promising optical materials, but their assembly could prove challenging. Here we demonstrate a scalable, site and size controlled fabrication monolayer molybdenum disulfide (MoS2), dot with nanometer-scale spatial density by focused electron beam irradiation induced local 2H to 1T phase change MoS2. By designing the 2D superlattice, show that new energy bands form where band gap can be pitch superlattice. The tuned...

In this paper, we review the essential physics that lead to most impressive properties of two-dimensional (2D) nanocrystals, primarily graphene and transition-metal dichalcogenides (TMD). We also highlight some applications uniquely enabled by these 2D materials in nanoelectronics domain discuss related challenges opportunities.

2D semiconductors have emerged as attractive channel materials for ultra-short-channel field-effect transistor (FET) application, because of their atomic-scale thickness and pristine surfaces that effectively suppress short-channel effects. However, large contact series resistances induced by Fermi-level pinning effect between metals most (2DS) the lack an effective reliable doping technique source/drain, respectively, are limiting performance 2D-FETs. Moreover, wafer-scale synthesis uniform...

2D layered materials have been recently demonstrated to be very promising for tunneling field-effect transistor (TFET) applications [1],[2]. However, a complete and detailed analysis of the band-edge properties semiconductors that determine fundamental subthreshold performance limits TFETs is still lacking. This work, first time, fills this gap provides new insight into unique advantages designing TFETs. achieved by combining photoluminescence (PL) measurements as well analytical modeling...