A5061648696- Graphene research and applications
- 2D Materials and Applications
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Advanced Sensor and Energy Harvesting Materials
- Ferroelectric and Negative Capacitance Devices
- Quantum and electron transport phenomena
- Advancements in Battery Materials
- Carbon Nanotubes in Composites
- Gas Sensing Nanomaterials and Sensors
- Advanced Photocatalysis Techniques
- Organic Light-Emitting Diodes Research
- Hydrocarbon exploration and reservoir analysis
- Geochemistry and Elemental Analysis
- Perovskite Materials and Applications
- Advanced Memory and Neural Computing
- Paleontology and Stratigraphy of Fossils
- Copper Interconnects and Reliability
- Flame retardant materials and properties
- Tactile and Sensory Interactions
- Nanocomposite Films for Food Packaging
- Molecular Junctions and Nanostructures
East China University of Technology
2024-2025
Chinese Academy of Agricultural Sciences
2023-2024
Institute of Agricultural Resources and Regional Planning
2023-2024
Xi'an Jiaotong University
2023-2024
Xi'an Polytechnic University
2023-2024
Peking University
1997-2024
Southwest Petroleum University
2022-2024
State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation
2022-2024
Shanxi University
2024
University of Electronic Science and Technology of China
2024
This work presents a systematic study toward the design and first demonstration of high-performance n-type monolayer tungsten diselenide (WSe2) field effect transistors (FET) by selecting contact metal based on understanding physics between WSe2. Device measurements supported ab initio density functional theory (DFT) calculations indicate that d-orbitals play key role in forming low resistance ohmic contacts with On basis this understanding, indium (In) leads to small WSe2 consequently,...
Modern electronics rely on semiconductors such as silicon. Researchers show how a new class of semiconductors---monolayer transition-metal dichalcogenides---can be optimized to improve device performance.
Transition metal dichalcogenides (TMDs), belonging to the class of two-dimensional (2D) layered materials, have instigated a lot interest in diverse application fields due their unique electrical, mechanical, magnetic, and optical properties. Tuning electrical properties TMDs through charge transfer or doping is necessary for various optoelectronic applications. This paper presents experimental investigation effect on TMDs, mainly focusing molybdenum disulfide (MoS2), by metallic...
In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal to atomically-thin disulphide (MoS2), high-performance field-effect transistors are experimentally demonstrated. order understand the physical nature of interface highlight role various factors contributing Mo-MoS2 contacts, density functional theory (DFT) simulations employed, which reveal that Mo can form high quality with monolayer MoS2 zero tunnel barrier Schottky under source/drain contact, well...
Two-dimensional (2D) crystal semiconductors, such as the well-known molybdenum disulfide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ), are witnessing an explosion in research activities due to their apparent potential for various electronic and optoelectronic applications. In this paper, dissipative quantum transport simulations using nonequilibrium Green's function formalism performed rigorously evaluate scalability...
This paper presents an analytical current-voltage model specifically formulated for 2-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor based field-effect transistors (FETs). The is derived from the fundamentals considering physics of 2D TMD crystals, and covers all regions FET operation (linear, saturation, subthreshold) under a continuous function. Moreover, three issues great importance in emerging arena: interface traps, mobility degradation, inefficient doping have...
Metal contacts to atomically thin two-dimensional (2D) crystal based FETs play a decisive role in determining their operation and performance. However, the effects of on switching behavior, field-effect mobility, current saturation monolayer MoS2 have not been well explored and, hence, is focus this work. The dependence contact resistance drain revealed by four-terminal-measurements. Without high-κ dielectric boosting, an electron mobility 44 cm2/(V·s) has achieved FET SiO2 substrate at room...
Copper-based interconnects employed in a wide range of integrated circuit (IC) products are fast approaching dead-end due to their increasing resistivity and diminishing current carrying capacity with scaling, which severely degrades both performance reliability. Here we demonstrate chemical vapor deposition-synthesized intercalation-doped multilayer-graphene-nanoribbons (ML-GNRs) better (more than 20% improvement estimated delay per unit length), 25%/72% energy efficiency at local/global...
Low-frequency noise is a significant limitation on the performance of nanoscale electronic devices. This especially important for devices based two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs), which have atomically thin bodies and, hence, are severely affected by surface contaminants. Here, we investigate low-frequency transistors molybdenum disulfide (MoS2), typical example TMD. The measurements performed bilayer MoS2 channel show peak in...
Since the discovery of graphene in 2004, which proved existence 2-D crystals nature, layered materials also known as van der Waals solids have received extensive reexamination, especially single-layer and multilayer forms because their type structure unique properties that not only benefit many existing electronic components but enable novel device concepts design architectures. Numerous research efforts been invested these materials, enormous quantities results generated during past 14...
In this paper, we first review the impressive properties of two-dimensional (2D) nanocrystals, primarily graphene and beyond-graphene 2D crystals, such as transition-metal dichalcogenides (TMDs), then highlight some applications uniquely enabled by these materials for designing next-generation low-power low-loss "green electronics". Key challenges crystals relevant to are discussed well.
Recently, Molybdenum Disulphide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) has emerged as a promising candidate for low-power digital applications. Compared to monolayer (1L) MoS , few-layer (FL-MoS is attractive due its higher density of states (DOS). However, comprehensive study FL-MoS field-effect-transistor (FET) lacking. In this paper, we report high-performance FET with record low contact resistance (~0.8 KΩ.μm) that...
Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability achieve subthreshold swing (SS) below 60 mV/decade. This letter reports comprehensive study of SS TFETs by examining effects electrostatics and material parameters on through physics based analytical model. Based analysis, an intrinsic degradation effect in is uncovered. Meanwhile, it also shown that designing...
Since the very inception of integrated circuits, dissimilar materials have been used for fabricating devices and interconnects. Typically, semiconductors are metals interconnecting them. This, however, leads to a “contact resistance” between them that degrades device circuit performance, especially nanoscale technologies. This letter introduces explores an “all-graphene” device-interconnect co-design scheme, where single 2-dimensional sheet monolayer graphene is proposed be monolithically...
Among various 2D materials, monolayer transition-metal dichalcogenides (TMDs) with intrinsic band gaps (1.1-2.2 eV) are considered as promising candidates for next generation electronics. For applicability of these novel materials transistors, a comprehensive understanding metal contacts to them is an absolute necessity, which lacking at present. In this paper, we report systematic study metal-TMD different geometries (end-contacts and side-contacts) by ab-initio density functional theory...
Environment-responsive fluorescent materials have been widely studied in the determination and utilization of different environmental factors. Particularly, it is still challenging to develop multifunctional environment-friendly pH-responsive based on biomass renewable polymers. In this study, a intelligent color-changing film cellulose nanofibers (CNFs)/polyvinyl alcohol (PVA) incorporated with anthocyanin (Ant) extracted from Lycium ruthenicum fruit amino-functionalized carbon dots...