Changik Im

ORCID: 0000-0003-4328-1335
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Research Areas
  • Thin-Film Transistor Technologies
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Transition Metal Oxide Nanomaterials
  • Spondyloarthritis Studies and Treatments
  • Rheumatoid Arthritis Research and Therapies
  • Neuroscience and Neural Engineering
  • Ga2O3 and related materials
  • Neural Networks and Reservoir Computing
  • Vasculitis and related conditions
  • Perovskite Materials and Applications
  • Advanced Biosensing Techniques and Applications
  • Advanced Battery Materials and Technologies
  • Bone and Joint Diseases
  • Heterotopic Ossification and Related Conditions
  • Spectroscopy and Laser Applications
  • Gastrointestinal Bleeding Diagnosis and Treatment
  • Immunodeficiency and Autoimmune Disorders
  • Systemic Lupus Erythematosus Research
  • Interstitial Lung Diseases and Idiopathic Pulmonary Fibrosis
  • Ferroelectric and Negative Capacitance Devices
  • Copper-based nanomaterials and applications
  • Dermatological and Skeletal Disorders
  • Organic Electronics and Photovoltaics

Seoul National University of Science and Technology
2019-2023

Samsung (South Korea)
2019-2023

Seoul National University
2005-2020

Advanced Institute of Convergence Technology
2019

Kyungpook National University
2014

Kyungpook National University Hospital
2013

Seoul National University Hospital
2013

ObjectiveTo assess the prevalence, characteristics and prognostic factors of interstitial lung disease (ILD) in Korean patients with polymyositis (PM), dermatomyositis (DM) amyopathic (ADM).

10.1093/rheumatology/keh723 article EN Lara D. Veeken 2005-06-21

Abstract Li + electrolyte‐gated transistors (EGTs) have received much attention as artificial synapses for neuromorphic computing. EGTs, however, been still challenging to achieve long‐term synaptic plasticity, which should be linearly and symmetrically controlled with the magnitude of electrical potential at gate electrode. Herein, a fluoroalkylsilane (FAS) self‐assembled monolayer (SAM) is introduced channel‐electrolyte interlayer function sequential ion‐trapping in EGTs. It demonstrated...

10.1002/adfm.202201048 article EN Advanced Functional Materials 2022-03-14

Li+ electrolyte-gated transistors (EGTs) have attracted significant attention as artificial synapses because of the fast response ion, low operating voltage, and applicability to flexible electronics. Due inherent nature EGTs show, however, limitations, such poor long-term synaptic plasticity nonlinear/nonsymmetric conductance update, which hinder practical applications synapses. Herein, integrated with poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ferroelectric polymer a...

10.1063/5.0130742 article EN Applied Physics Reviews 2023-02-03

Cuprous oxide (Cu2O) p-type thin-film transistors (TFTs) can be practically applied for complementary metal semiconductor (CMOS) logic circuits, but the electrical performances are still insufficient due to high off-current and low field-effect mobility. Here, we have demonstrated Cu2O TFTs with improved mobility through reduction of cupric (CuO) impurities dissociative Cu defects combination deposition annealing conditions. Copper was deposited by radio frequency sputtering in mixed gases...

10.1021/acsaelm.2c01589 article EN ACS Applied Electronic Materials 2023-02-07

An all-inorganic heterojunction phototransistor with perovskite (CsPbI<sub>x</sub>Br<sub>3−x</sub>) and IGZO is introduced to enhance the sensing performance of optoelectronic devices expand detecting range from ultraviolet visible light region.

10.1039/c9tc04757c article EN Journal of Materials Chemistry C 2019-01-01

Abstract Electrolyte‐gated transistors (EGTs) have been extensively studied as a next‐generation neuromorphic device mimicking the biological ionic flux in synapses. However, its long‐term plasticity characteristic lasts only for few seconds because of rapid self‐discharge electrical double layer. Here, ultraviolet ozone (UVO) treated water‐in‐bisalt (WiBS)/polymer electrolyte‐gated synaptic transistor (WEST) which excellently implements multiple functions is proposed. Ultraviolet (UV) light...

10.1002/adfm.202110591 article EN Advanced Functional Materials 2021-12-29

Recently, two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have attracted great attention due to their unique properties. To modulate the electronic properties and structure of TMDs, it is crucial precisely control chalcogenide vacancies several methods already been suggested. However, they limitations plasma damage by ion bombardment. Herein, we introduced a novel solvent-assisted vacancy engineering (SAVE) method sulfur in MoS2. Considering...

10.1039/d3nh00201b article EN Nanoscale Horizons 2023-01-01

Abstract Interfacial instability between Li‐metal anode (LMA) and inorganic solid‐state electrolyte (SSE) is a critical issue in all‐solid‐state batteries (ASSLBs). Previous studies have focused on interface modification methodology to achieve long‐term cycling stability ASSLBs. However, strategy establishment without an in‐depth understanding of the LMA–SSE limited phenomenological solution. Also, fact that rechargeable are operated by behavior charges inside electric field frequently...

10.1002/adfm.202107555 article EN Advanced Functional Materials 2021-11-17

Growing attention has been given to low temperature, solution-processed metal oxide thin-film transistors because they can be applied in the emerging sector of flexible and large-scale electronics. However, major obstacles solution-grown devices, such as their relatively field-effect mobility difficulty controlling carrier concentration, limit further advancement Here, we overcome these constraints through a newly renovated structure, called "homojunction", consisting double-stacked...

10.1021/acsami.8b18422 article EN ACS Applied Materials & Interfaces 2019-01-04

In this article, the atmospheric pressure plasma (APP) treatment method is proposed to solve instability problem under a long-term electrical bias stress through semiconductor surface without degrading excellent characteristics of oxide thin-film transistors (TFTs). The high-energy oxygen radicals produced by APP vacuum system affect properties quickly and easily changing chemical state oxygen-related bonds in semiconductor. Consequently, amorphous indium gallium zinc TFTs with suitable...

10.1109/ted.2020.3000736 article EN IEEE Transactions on Electron Devices 2020-06-23

The stability and control of copper (Cu) electrode application in oxide semiconductor indium gallium zinc (IGZO) can improve the resistance–capacitance (RC) delay, which is greatly critical for realizing high resolution large area display devices. However, to suppress Cu diffusion into IGZO that causes degradation reliability performance electric devices requires study increasingly thinner barriers, surface-functionalized interfacial self-assembled monolayer (SAM) with a thickness several...

10.1021/acsaelm.8b00132 article EN ACS Applied Electronic Materials 2019-02-13

Metal oxide semiconductors doped with additional inorganic cations have insufficient electron mobility for next-generation electronic devices so strategies to realize the exhibiting stability and high performance are required. To overcome limitations of conventional cation doping improve electrical characteristics metal semiconductors, we propose solution-processed high-performance thin-film transistors (TFTs) by incorporating polyaniline (PANI), a conductive polymer, in matrix. The chemical...

10.1021/acsami.0c21134 article EN ACS Applied Materials & Interfaces 2021-02-10

Oxide thin-film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, oxide semiconductors (OSs) been developed as active layers of TFTs. Among them, indium-gallium-zinc (IGZO) is actively used in the organic light-emitting diode display field. However, despite their superior off-state properties, IGZO TFTs are limited by low field-effect mobility, which critically affects resolution power consumption. Herein,...

10.1021/acsami.1c17351 article EN ACS Applied Materials & Interfaces 2021-10-20

We present an atmospheric-pressure plasma (APP) treatment technique to improve the electrical performance of solution-processed dielectric films. This can successfully reduce leakage current and frequency dependence The APP contributes conversion metal hydroxide oxide, in case a solution-treated AlO x thin film, it effectively ascribes formation high-quality capacitance untreated film varies up 9.9% with change, but treated within 1.5%. When InO thin-film transistors (TFTs) were fabricated...

10.1088/1361-6528/ab4073 article EN Nanotechnology 2019-09-02

The exact direction of the surface energy characterized functional groups self-assembled monolayers (SAMs) is proposed for achieving enhanced electrical stability indium gallium zinc oxide (IGZO) semiconductor thin film transistors (TFTs). SAM treatment, particularly with group having lower energy, makes it difficult to adsorb oxygen molecules onto IGZO. Such an effect greatly improves positive bias (PBS) and clockwise hysteresis stability. For NH

10.1088/1361-6528/abad5e article EN Nanotechnology 2020-08-07

Abstract Thin‐film transistors (TFTs) based on ternary or quaternary metal oxides possess features that are advantageous for the commercialization of large‐area and flexible displays. These include high mobility, current on–off ratio, uniformity over large areas. However, manufacture TFTs mainly uses costly sputtering equipment with low throughput. Here, it is demonstrated cation exchange a novel, solution‐based route obtaining high‐quality oxide films from binary films. Specifically, some...

10.1002/admi.202200190 article EN Advanced Materials Interfaces 2022-07-14

Synaptic devices that mimic biological neurons have attracted much attention for brain-inspired neuromorphic computing. Especially, synaptic thin-film transistors (TFTs) emerged with simultaneous signal processing and information storage advantages. However, the analysis of excitatory postsynaptic current (EPSC) relies on an empirical model such as a serial RC circuit, which limits systematic in-depth study in terms material electrical properties. Herein, single-pulse-driven EPSC (SPSE)...

10.1063/5.0101168 article EN Journal of Applied Physics 2022-07-26

Due to the increasing miniaturization, lightweight, wearable, and portable electronic devices, there is an need reduce power consumption through lower operating voltages of thin-film transistors (TFTs). In this study, we proposed a “water-in-bisalt” (WiBS) ultraviolet (UV)-curable polymer composite material, which aqueous electrolyte with high capacitance, realized dielectric material for low stable voltage range TFTs that can be handled in ambient condition. We fabricated free-standing...

10.1063/1.5093741 article EN Applied Physics Letters 2019-04-29

<h3>Background</h3> Rheumatoid arthritis (RA) patients have an increased risk of mortality, which has been partially attributed to higher cardiovascular mortality. <h3>Objectives</h3> To determine the mortality and their factors over 2 years follow up in a cohort study. <h3>Methods</h3> A total 406 RA 209 age sex-matched normal controls enrolled KNUH Atherosclerosis Risk (KARRA) was assessed according standardized protocol for two years. Demographic data, traditional CV factors, clinical...

10.1136/annrheumdis-2014-eular.4620 article EN Annals of the Rheumatic Diseases 2014-06-01

<h3>Background</h3> Tumor necrosis factor (TNF) inhibitors provide effective therapeutic benefit in reducing clinical symptoms of ankylosing spondylitis (AS), especially the amelioration spinal inflammation. Metrological measures represent a clinically useful outcome for evaluation response and are associated with changes radiological index health-related quality life. <h3>Objectives</h3> We sought to investigate predictors improvement metrological after treatment TNF patients AS....

10.1136/annrheumdis-2014-eular.4669 article EN Annals of the Rheumatic Diseases 2014-06-01

<h3>Background</h3> The epidemiologic studies of granulomatosis with polyangiitis (Wegener's) (GPA) have been reported primarily in European/American countries while there are only a few data available from Asian area. Recent clinical Japan and China indicated that is geographical difference the incidence GPA (1, 2) different ANCA pattern between Caucasian may be associated manifestations. <h3>Objectives</h3> aim this study to anlayze clinicopathologic characteristics Korean patients GPA....

10.1136/annrheumdis-2012-eular.1329 article EN Annals of the Rheumatic Diseases 2013-06-01

<h3>Background</h3> Adult Henoch-Schönlein purpura (HSP) has a significantly higher frequency of gastrointestinal (GI) bleeding, compared with childhood HSP. However, the clinical characteristics GI bleedings in adult HSP are still largely unknown, since small number studies performed included case reports and few series. <h3>Objectives</h3> To investigate manifestations, endoscopic features lesions patients bleeding. <h3>Methods</h3> Twenty-four patients, who had evidence bleeding underwent...

10.1136/annrheumdis-2013-eular.2768 article EN Annals of the Rheumatic Diseases 2013-06-01
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