A5009820240- Photonic and Optical Devices
- Terahertz technology and applications
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Superconducting and THz Device Technology
- Advanced Fiber Laser Technologies
- Optical Network Technologies
- Advanced Fiber Optic Sensors
- Spectroscopy and Laser Applications
- Radio Frequency Integrated Circuit Design
- GaN-based semiconductor devices and materials
- Laser Design and Applications
- Photonic Crystal and Fiber Optics
- Millimeter-Wave Propagation and Modeling
- Gyrotron and Vacuum Electronics Research
- Advanced Photonic Communication Systems
- Photonic Crystals and Applications
- Advanced Semiconductor Detectors and Materials
- Nonlinear Dynamics and Pattern Formation
- Acoustic Wave Resonator Technologies
- Microwave and Dielectric Measurement Techniques
- Molecular Communication and Nanonetworks
- Geophysics and Sensor Technology
- Quantum and electron transport phenomena
- Microwave Engineering and Waveguides
Université de Montpellier
2015-2024
Centre National de la Recherche Scientifique
2015-2024
Institut d'Électronique et des Systèmes
2015-2024
Medizinisches Versorgungszentrum Prof. Mathey, Prof. Schofer
2021-2022
Sidi Mohamed Ben Abdellah University
2019
Organisation de Micro-Electronique Générale Avancée
2017
GANIL
2013
Fonctions Optiques pour les Technologies de l’information
2003-2010
Université de Rennes
2004-2009
Foton Motors (China)
2009
Published experimental results show that single-mode laser light is characterized in the microwave range by a frequency noise which essentially includes white part and $1∕f$ (flicker) part. We theoretically spectral density (the line shape) compatible with these Voigt profile whose Lorentzian or homogeneous component linked to Gaussian noise. measure semiconductor profiles verify they can be fit functions. It also verified width of varies like $1∕P$ where $P$ power while more constant....
We propose a new solution for modal decomposition in multimode fibers, based on spectral and spatial imaging technique. The appearance of spurious modes the processing images at output fiber under test when it has more than two is demonstrated theoretically. method, which allows us to identify modes, accurate, simpler, faster previously reported methods. For demonstration, measurements standard step-index small-core microstructured are carried out successfully.
We report a detailed experimental and theoretical analysis of novel type fibre-optic gyroscope (FOG) that utilizes an air-core photonic-bandgap fibre (PBF) in its sensing coil. The anticipated benefits using include dramatically reduced phase bias drift due to temperature (Shupe effect), magnetic field (Faraday effect) optical nonlinearity (Kerr all which result from the fact mode now propagates air instead silica. Kerr sensitivity, combined with low limit backscattering fibre, offers...
We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below frequencies can be employed in communication. Wireless over 50 cm presented 1.4 uni-travelling-carrier photodiode source. Transistor integration detailed, it essential avoid any...
We report on terahertz wireless communication experiments at 0.3 THz using 250-nm gate-length GaAs/AlGaAs field-effect transistor (FET) as a detector and unitraveling-carrier photodiode source. The physical mechanism of the detection process is wave rectification nonlinearities related to overdamped plasma oscillations in channel. present an experimental study bandwidth show for first time that room-temperature direct with modulation up 8 GHz can be achieved, thus showing nanometer-sized...
We report a continuous-wave highly-coherent and tunable dual-frequency laser emitting at two frequencies separated by 30 GHz to 3 THz, based on compact III–V diode-pumped quantum-well surface-emitting semiconductor technology. The concept is the stable simultaneous operation of Laguerre–Gauss transverse modes in single-axis short cavity, using an integrated sub-wavelength-thick metallic mask. Simultaneous demonstrated theoretically experimentally recording intensity noises beat frequency,...
The detection of high data‐rate wireless communication using a terahertz‐frequency carrier, and GaAs transistor as detector, is reported. Communications are investigated around 0.2 0.3087 THz. For the first time, an error‐free transmission at data rates up to 8.2 Gbit/s demonstrated, carrier frequency
We demonstrate coherent and tunable THz emission by excitation of a unitraveling-carrier photodiode dual-frequency III-V semiconductor laser emitting up to 80 mW optical power around 1 μm. The is an optically-pumped vertical-external-cavity surface-emitting that operates simultaneously on two transverse Laguerre-Gauss modes. Modes frequency difference driven thermal effects, band-filling effects and/or phase masks, allowing from 50 GHz few THz. To reach pigtailed photodiode, we detail...
A 600 GHz data transmission using the combination of a photonic emission uni-travelling carrier photodiode and an electronic detection is investigated. high-definition television at this frequency with very low power receiver reported. Only 10 nW terahertz (THz) was sufficient to ensure successful video transmission. This photonics heterodyne lead achieving THz wireless links safe level electromagnetic exposure.
We report the first measurements of random walk (RW) an air-core fiber optic gyroscope (FOG), a novel sensor that exhibits reduced thermal sensitivity thanks to use fiber. Comparing this data RW-equivalent noise gyro detection system alone and simple model demonstrates measured RW is unaffected by high backscattering fiber, but it limited instead detector for detected powers under ~5 muW source excess above muW. Above power level, found be independent equal 0.021deg/radich, which comparable...
We report on photo-induced terahertz radiation with a high spectral purity generated by submicron sized InGaAs-based high-electron-mobility transistor. The emission peak is due to the electron-hole pairs photocreated in transistor channel at frequency of beating two cw-laser sources. corresponds lowest fundamental plasma mode gated region channel. observed quality factor 200 K interpreted as result stream-plasma instability two-dimensional electron gas whose appearance emphasized reduction...
We report on measurements of radiation transmission in the 0.220–0.325 THz frequency range through GaN quantum wells grown sapphire substrates at nitrogen and room temperatures. Significant enhancement transmitted beam intensity with applied voltage is found temperature. This effect explained by changes mobility two-dimensional electrons under electric bias. have clarified which physical mechanism modifies electron we suggest that voltage-controlled sub-terahertz can be used for development...
We report the first successful terahertz heterodyne communication using a field-effect transistor for detection. The is real-time transmission of an uncompressed high-definition TV signal at data rate 1.5 Gbps with 307-GHz carrier frequency. emitter frequency-multiplied amplifier chain whose last stage second harmonic mixer that multiplies by data. receiver only consists GaAs high-electron-mobility acts as quadratic receiver, and two 20-dB-gain amplifiers, no limiting or forward error...
Compact and fast detectors, for imaging wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz modulation bandwidth up to a few tens GHz. This can be obtained only by using mature technology allowing monolithic integration detectors low-noise amplifiers. One the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz...
We explore how radiation-resistant broadband erbium-doped fibers (EDFs) can be achieved by using a carefully selected chemical composition, without specific coating or packaging. In this framework, we define factor of merit, an appropriate and effective tool to design radiation-hardened EDF amplifier (EDFA) based on mature technology. focus specialty fibers, with finely tuned composition in aluminum erbium, guaranteeing the optimal operation EDFA (a 20-nm bandwidth optical output power level...
This article reports a novel 3-D imaging approach for remote, nondestructive material inspection at depth. The is based on frequency-modulated continuous-wave (FMCW) radar system operating in the 75-110-GHz frequency band. Time-domain spectroscopy (TDS) measurements demonstrate that such band has manage-able attenuation levels centimeter-long materials, thereby offering an advantageous resolution-versus-measurement-depth tradeoff compared with higher frequencies. proposed setup includes long...
Design, manufacturing and measurements results for silicon plasma wave transistors based wireless communication wideband receivers operating at 300 GHz carrier frequency are presented. We show the possibility of Si-CMOS integrated circuits, in which by: (i) specific physics transistor design allowing impedance matching to antenna amplifier, (ii) engineering shape patch through a stacked resonator approach (iii) applying bandwidth enhancement strategies broadband we achieve an circuit...
We propose an efficient optically actuated THz modulator based on ultrathin epsilon-near-zero (ENZ) slab photogenerated in InAs semiconductor. experimentally demonstrate a modulation depth of 90% at 1 obtained with continuous laser irradiation lower than 10 W cm−2. Beyond the strong attenuation transmission provided by ENZ absorption effect, we also report broadband waves from to THz. In addition, our experimental results show that cut-off frequency 3 dB attains 2 MHz dynamic regime.
Relative intensity noise of a six-channel multiwavelength distributed Fabry-Perot fibre laser is compared to the singlemode feedback laser. The characteristics individual channels are similar that laser, offering low-cost and compact solution for wavelength multiplexing applications without penalty.
Transistors are possible THz detectors using rectification in the channel that can be applied for detection of high data-rate wireless communications, based on THz-frequency carrier. For first time, we present transmission pseudo-random bit sequence at 0.2 a commercial GaAs transistor and demonstrate open eye patterns up to 0.250 Gbps.
We propose using a frequency-modulated laser in fiber-optic gyroscope (FOG) minimum configuration. Compared to the traditional broadband source, narrow-band offers two significant advantages, namely elimination of excess noise and thus improved sensitivity rotation, more stable mean wavelength, hence greater scale-factor stability. show that strong back-reflection coherent backscattering introduced by use is greatly reduced modulating frequency. In both conventional FOG an air-core fiber, we...
Bistabilities between a steady (or pulsating, chaotic) and different pulsating regimes are investigated for an optically injected semi-conductor laser. Both numerical experimental studies reported continuous-wave single-mode semiconductor distributed-feedback lasers emitting at 1.55 microm. Hysteresis driven by either changing the power or frequency difference both lasers. The effect of laser pumping rate is also examined. Systematic mappings possible outputs (injection locking, bimodal,...