A5089544144- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Terahertz technology and applications
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Radio Frequency Integrated Circuit Design
- Photonic and Optical Devices
- Superconducting and THz Device Technology
- Spectroscopy and Laser Applications
- Semiconductor materials and interfaces
- Advanced Semiconductor Detectors and Materials
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Electromagnetic Compatibility and Noise Suppression
- Theoretical and Computational Physics
- thermodynamics and calorimetric analyses
- Plasmonic and Surface Plasmon Research
- Nanowire Synthesis and Applications
- Surface and Thin Film Phenomena
- Acoustic Wave Phenomena Research
- Biofield Effects and Biophysics
- Semiconductor Lasers and Optical Devices
- Spectroscopy and Quantum Chemical Studies
- Advanced Thermodynamics and Statistical Mechanics
Università della Svizzera italiana
2024
Institut d'Électronique et des Systèmes
2014-2023
Medizinisches Versorgungszentrum Prof. Mathey, Prof. Schofer
2021-2023
Centre National de la Recherche Scientifique
2013-2023
Université de Montpellier
2013-2023
University of Manchester
2018
National Interuniversity Consortium for the Physical Sciences of Matter
2009
Center for Physical Sciences and Technology
2009
University of Salento
2009
Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier
1994-2004
A graphene ballistic rectifier is used in conjunction with an antenna to demonstrate a rectenna as terahertz (THz) detector. small-area (<1 μm2) local gate adjust the Fermi level device optimize output while minimizing impact on cutoff frequency. The operates both n- and p-type transport regimes shows peak extrinsic responsivity of 764 V/W corresponding noise equivalent power 34 pW Hz-1/2 at room temperature no indications frequency up 0.45 THz. also demonstrates linear response for more...
Both classical and quantum electrodynamics predict the existence of dipole-dipole long-range electrodynamic intermolecular forces; however, these have never been hitherto experimentally observed. The discovery completely new unanticipated forces acting between biomolecules could considerable impact on our understanding dynamics functioning molecular machines at work in living organisms. Here, using two independent experiments, basis different physical effects detected by fluorescence...
We present a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices. The theory is based on Monte Carlo simulations the carrier motion self-consistently coupled with Poisson solver. Current voltage operations are applied their respective representations discussed. As application we consider cases homogeneous materials, resistors, n/sup +/nn/sup +/ structures, Schottky-barrier diodes. Phenomena associated coupling between fluctuations velocity...
Theoretical and experimental evidence for collective vibrations of a protein subject to an external energy supply support the hypothesis that biochemical reactions in living cells are mediated by electrodynamic forces.
We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below frequencies can be employed in communication. Wireless over 50 cm presented 1.4 uni-travelling-carrier photodiode source. Transistor integration detailed, it essential avoid any...
We report on terahertz wireless communication experiments at 0.3 THz using 250-nm gate-length GaAs/AlGaAs field-effect transistor (FET) as a detector and unitraveling-carrier photodiode source. The physical mechanism of the detection process is wave rectification nonlinearities related to overdamped plasma oscillations in channel. present an experimental study bandwidth show for first time that room-temperature direct with modulation up 8 GHz can be achieved, thus showing nanometer-sized...
We study the thermal conductivity and Lorenz number of charge carriers for one-dimensional ballistic transport within correlation function formalism. The carrier transit time between two ideal contacts is found to substitute collision in definition a conductivity. A universal conductance $K\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}2{\ensuremath{\pi}}^{2}{k}_{B}^{2}T/3h$ naturally obtained degenerate case. Dispersion curves associated with different scales belonging microscopic...
An experimental demonstration of GaN-based asymmetric nanodiodes as direct and heterodyne detectors up to 0.69 THz has been performed at room temperature. Responsivities 2 0.3 V/W in a free-space configuration were obtained 0.30 THz, respectively. intermediate frequency (IF) signal measured 40 13 GHz the same ranges. The characterization mixers did not show any deviation from linearity between RF input power IF output. Monte Carlo simulations, used estimate nanodevice intrinsic conversion...
We present a general theory to investigate the electronic noise in presence of scattering as well generation-recombination processes. An exact decomposition procedure current spectral density is given that, addition fluctuations carrier velocity and number, shows cross term coupling both fluctuations. Four correlation functions are thus found be needed evaluate all terms. To this purpose, Monte Carlo method shown provide unifying microscopic calculation these functions. consider case p-type...
In the framework of analytical and hydrodynamic models for description carrier transport noise in high electron mobility transistor/field-effect transistor channels main features intrinsic transistors are investigated under continuous branching current between channel gate. It is shown that current-noise voltage-noise spectra at terminals contain an excess related to thermal excitation plasma wave modes dielectric layer found set excited waves can be governed by external embedding circuits,...
The conditions for microwave power generation at low temperatures under optical phonon emission are analyzed by Monte Carlo simulations of both small- and large-signal responses in bulk zinc blende wurtzite GaN. As a result the high energy strong interaction electrons with phonons GaN general improvement on transit-time resonance considerable increase maximum frequency can be achieved comparison to widely studied III–V materials such as GaAs InP. A dynamic negative differential mobility...
A closed hydrodynamic model and the associated numerical procedures are developed for simulating hot-carrier transport in submicron semiconductor devices. To check validity of model, steady-state characteristics near-micron n+nn+ InP diodes compared with a standard Monte Carlo approach. The excellent agreement found fully validates physical reliability our which has been further to investigate linear nonlinear time-dependent characteristics. contribution each part device, when operating as...
We present an original Monte Carlo study of correlation functions for the general case a doped semiconductor under influence electric field arbitrary strength. Number, velocity, and energy carriers are taken as relevant variables. These lead to set 25 that, cubic in 〈100〉 direction investigated this paper, reduce 11 nonvanishing functions. By using analytical model based on coupled Langevin equations together with results simulations, we have quantitatively analyzed different coupling...
The noise temperature of GaAs ${\mathit{n}}^{+}$${\mathit{nn}}^{+}$ two-terminal structures micrometer and submicrometer lengths is theoretically analyzed as a function frequency applied voltage. Calculations are performed at kinetic level, based on mixed Monte Carlo hydrodynamic scheme. Different operation modes the structure considered, namely, when operating nonlinear resistor (passive device) well Gunn amplifier or generator (active device). Under generating conditions low found to go...
A microscopic analysis of current and voltage fluctuations in GaAs Schottky barrier diodes under forward-bias conditions the absence 1/f contributions is presented. Calculations are performed by coupling self-consistently an ensemble Monte Carlo simulator with a one-dimensional Poisson solver. By using current- voltage-operation modes origin spatial location noise sources, respectively, provided. At different voltages device exhibits types (shot, thermal, excess), which explained as result...
The time and frequency behavior of hot-carrier velocity fluctuations in bulk semiconductors subjected to strong periodic electric fields is analyzed by using two complementary approaches based on the correlation function finite Fourier transform. Monte Carlo calculations performed for GaAs, InP, InN show that semiconductor materials with a high value threshold field Gunn effect are characterized signal-to-noise ratio under high-order harmonics generation and, hence, they promising microwave...
We report on photo-induced terahertz radiation with a high spectral purity generated by submicron sized InGaAs-based high-electron-mobility transistor. The emission peak is due to the electron-hole pairs photocreated in transistor channel at frequency of beating two cw-laser sources. corresponds lowest fundamental plasma mode gated region channel. observed quality factor 200 K interpreted as result stream-plasma instability two-dimensional electron gas whose appearance emphasized reduction...
The potentialities of AlGaN/GaN nanochannels with broken symmetry (also called self-switching diodes) as direct and heterodyne THz detectors are analyzed. operation the devices in free space detection scheme have been measured at room temperature RF up to 0.32 explained a result high-frequency nonlinearities using Monte Carlo simulations. Intermediate-frequency bandwidth 40 GHz is obtained.
In this paper, we perform, by means of Monte Carlo simulations and experimental measurements, a geometry optimization GaN-based nano-diodes for broadband Terahertz direct detection (in terms responsivity) mixing output power). The capabilities the so-called self-switching diode (SSD) are analyzed different dimensions channel at room temperature. Signal up to 690 GHz limit set-up has been achieved zero bias. reduction width increases responsivity, while in length reduces responsivity but...
We present a microscopic analysis of current fluctuations in GaAs Schottky-barrier diode under forward-bias conditions. The calculations are performed by employing one-dimensional Poisson solver coupled self-consistently with an ensemble Monte Carlo simulator. Results support and complement previous findings M. Trippe, G. Bosman, A. van der Ziel [IEEE Trans. Microwave Theory Tech. MTT-34, 1183 (1986)] based on phenomenological models. In particular, the coupling between carrier velocity...