A5071279689- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Electrostatic Discharge in Electronics
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
- Advanced Power Amplifier Design
- Silicon Carbide Semiconductor Technologies
- Cellular transport and secretion
- Advanced Sensor and Energy Harvesting Materials
- Advanced MEMS and NEMS Technologies
- Probabilistic and Robust Engineering Design
- Neuroscience and Neural Engineering
- Acoustic Wave Resonator Technologies
- MXene and MAX Phase Materials
- Retinal Development and Disorders
- Semiconductor materials and interfaces
GlobalFoundries (Germany)
2022-2024
NaMLab (Germany)
2015-2021
This article reports an improvement in the performance of hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach interfacial layer (IL) engineering and READ-voltage optimization. FeFET devices with silicon dioxide (SiO2) oxynitride (SiON) as IL were fabricated characterized. Although FeFETs SiO2 interfaces demonstrated better low-frequency characteristics compared to SiON interfaces, latter WRITE endurance retention. Finally, neuromorphic...
This article proposes a memory cell, denoted by 1F-1T, consisting of ferroelectric field-effect transistor (FeFET) cascaded with another current-limiting (T). The reduces the impact drain current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$I_{d}$</tex-math></inline-formula> ) variations limiting on-state in FeFET. experimental data from our 28nm high-k-metal-gate (HKMG) based FeFET calibrates and...
This article reports an improvement in the low- frequency noise characteristics hafnium oxide-based (HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) engineering. FeFET devices with silicon dioxide (SiO and oxynitride (SiON) as IL were fabricated characterised. FeFETs SiON interfaces demonstrated excellent variation, low-frequency characteristics. The wider...
<p>This letter proposes a memory cell, denoted by 1F-1T, consisting of ferroelectric field-effect transistor (Fe-FET) cascoded with another current-limiting (T). The reduces the impact drain current (Id) variations limiting on-state in FeFET, 1F. We have fabricated 28nm high-k-meta-gate (HKMG) based FeFETs, and experimental data is used to model simulate single-cell arrays. simulation shows significant improvement bit-line (BL) (IBL ) variation for 1F-1T array. Finally, system-level...
Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -TiO nanolaminates are very attractive candidates for future conductive passivation layers because they purely based on dielectric materials, which allow a simple integration in the state-of-the-art manufacturing process. In this study, double and multilayers grown by atomic layer deposition systematically investigated. The feature...
This paper reports that large polarization <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(2\mathrm{P}_{\mathrm{r}}\approx 35.3\ \mu\mathrm{C}/\text{cm}^{2})$</tex> can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well good retention for up to 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> seconds is observed...
In this paper, the self-heating effect for multi-finger fully depleted SOI nMOSFETs is investigated. The layout parameters of transistor are varied, and conductance-based method used extraction thermal resistance. An empirical-based scalable resistance model that accounts geometrical developed. Further, hot carrier stress degradation examined, a correlation between established. associated with dimension influences amount should be taken into account accurate modeling. It found increase...
Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> based nanolaminates provide new functionalities for silicon surface passivation layers in future high-efficient cell concepts. This work presents two different applications: (I) Symmetrical application on p- and n-type Si are realized with thin HfO Al-doped SiO interface between Si. These stacks have excellent chemical but zero fixed...
A major reliability concern in modern high-k field effect transistors (FETs) resembles the defect density distribution within hafnium oxide layer as well its interaction with interfacial layer. For a deeper understanding of charged traps both energetically spatially, it is essential to upgrade from two level charge pumping scheme three scheme. Through variation pulse width and amplitude subsequent second pulse, energy location can be extracted inside gate stack, which important understand...
The continuous evolution and physical scaling of RF CMOS devices empowers the high performance millimeter wave applications modern technologies. reliable operation these is also becoming more important with rapid to achieve higher performance. To obtain in depth understanding reliability FD-SOI devices, worst case hot carrier stress was induced corresponding impact on small signal parameters analyzed using S-parameter DC measurements. origin variation link parameter degradation investigated.
The degradation predicted by classical DC reliability methods, such as bias temperature instability (BTI) and hot carrier injection (HCI), might not translate sufficiently to the AC conditions, which are relevant on circuit level. direct analysis of level is therefore an essential task for hardware qualification in near future. Ring oscillators (RO) offer a good model system, where both BTI HCI contribute degradation. In this work, it qualitatively shown that additional off-state stress...
This paper presents 22FDSOI device RF performance figure of merit dependencies on the design parameters, such as gate length, width per finger, number fingers, centerline poly pitch, well vertical repetition. With a proper parameters combination, can achieve high 413 GHz <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f_{MAX}$</tex> . As circuit demonstration, 2-stage 2-stack power amplifier achieves an output 20.2 dBm and 32 % peak PAE at 28 GHz.
This paper reports a study on spike-timing-dependent plasticity (STDP) in high-k metal gate (HKMG) based ferroelectric Field effect transistors (FeFET). FeFET devices have been fairly well exploited the context of in-memory computing due to their excellent non-volatile storage characteristics and analog conductance tunability. However, applications Spiking Neural Networks (SNN) are yet be explored properly. work potential HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this work, a novel methodology to characterize the Low-Frequency Noise LFN on large device statistics and suitable for production monitoring is proposed. The maximum drain current fluctuations over time are measured. slope of distribution modeled with physical equations related basic properties. approach validated by studying impact transistor geometry (different gate width, number fingers length) as well oxide thickness characterization temperature. conclusion, proposed tested evaluating...
The growing interest in high speed and RF technologies assert for the importance of reliability characterization beyond conventional DC methodology. In this work, influence bias temperature instability (BTI) stress on small signal parameters is shown. correlation between degradation established which enables empirical modelling induced changes. Furthermore, S-Parameters demonstrated as tool to qualitatively distinguish HCI BTI mechanisms with help extracted gate capacitances.
<p>This letter proposes a memory cell, denoted by 1F-1T, consisting of ferroelectric field-effect transistor (Fe-FET) cascoded with another current-limiting (T). The reduces the impact drain current (Id) variations limiting on-state in FeFET, 1F. We have fabricated 28nm high-k-meta-gate (HKMG) based FeFETs, and experimental data is used to model simulate single-cell arrays. simulation shows significant improvement bit-line (BL) (IBL ) variation for 1F-1T array. Finally, system-level...
Highlights from Silicon Device Physics, material sciences and electrical engineering are among the first results to be presented GFs subcontracts in IPCEI-project, namely a reconfigurable FET compatible with 22-FDX-technology, CMOS new Si doped HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> for electrocaloric/ pyroelectric effects on chip, modelling of 22FDX devices higher GHz range 5G Dual Band transceiver blocks designed
Among various device degradation modes, bias temperature instability (BTI) is one of the key reliability concerns. Throughout years measurement true BTI which incorporate fast recovery component a focus for faster characterization techniques. In this study novel S-Parameter based method demonstrated. This technique distinguishes itself from other methods, that it does not constitute any as monitored without disengaging stress condition while using standard RF setup.
This article reports the impact of high-k material deposition process on low-frequency noise and reliability hafnium oxide-based (HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) ferroelectric field-effect transistors (FeFET). A significant influence method defect densities and, subsequently, FeFETs was observed. Furthermore, a correlation with behavior found, improved pathways were identified. Finally, FeFET's in-memory-computing...
This article consists of a collection slides from the conference panel presentation.